Abstract: A transmitter for averagedly suppressing the variation in input level of an amplifier according to variation in carrier level. The transmitter includes an input power calculation section for calculating mean input power of each carrier, an output power calculating section for calculating mean output power of each carrier after the carrier band is limited, a monitoring section for identifying a carrier having the maximum mean input power, acquiring the maximum value, acquiring the mean output power of the identified carrier, determining the ratio of the mean input power to the mean output power, and calculating level control information which is the ratio of the ratio determined above to a predetermined expected value, and a signal level adjusting section for adjusting the level of a multicarrier signal by multiplying the level control information outputted from the monitoring section.

Abstract: In a transmitter that suppresses the peak level of a multi-carrier signal produced by synthesizing a plurality of carrier signals, high signal quality is maintained for any transmission signal pattern, for example. In a peak power suppression means shown in the drawings, suppression signal generation means 7 to 18 generate a peak level suppression signal having a level according to levels of respective carrier signals for frequencies of the respective carrier signals contained in the multi-carrier signal. Suppression signal subtraction means 19, 20 subtract, from the multi-carrier signal, the peak level suppression signal generated by the suppression signal generation means 7 to 18.

Abstract: In a massed region of each of a plurality of transfer areas of a mask a plurality of light transmission patterns are formed by opening a half-tone film. A phase shifter is disposed in each of the light transmission patterns so that a 180° phase inversion occurs between the lights that transmit through adjacent light transmission patterns. In a sparse region of the plurality of transfer areas a solitary light transmission pattern is formed by opening the half-tone film. Both shape and size are the same among the light transmission patterns, which are disposed symmetrically in both the massed and sparse regions about the center between the transfer areas. The phase shifters in the massed regions are disposed so that the phase of each phase shifter in one of the transfer areas comes to be opposed to that of its counterpart in the other transfer area. In the exposure process, those transfer areas are overlaid one upon another in the same chip region.

Abstract: Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

Abstract: A mask fabrication time is shortened. By patterning an electron-sensitive resist film coated on a main surface of a mask substrate, a pellicle is mounted on the main surface of the mask substrate immediately after a resist pattern made from an electron beam sensitive resist film and having light-shielding characteristics with respect to exposure light is formed. Subsequently, by irradiating a laser beam to defect made from the electron beam sensitive resist film with the pellicle being mounted on the mask substrate, the defect is removed. Since the defect can be removed without removing the pellicle, the mask fabrication time can be shortened.

Abstract: Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

Abstract: To alleviate the absolute value control accuracy of phases in a mask having a groove shifter structure, transfer regions formed at different planar positions on the same plane of the same mask are subjected to a multiple exposure by scanning exposure. Although. identical mask patterns are formed over the transfer regions respective groove shifters provided to these mask patterns are arranged opposite from each other.

Abstract: Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

Abstract: This invention provides a soldering method capable of solving soldering defects due to excess molten solder in the case of soldering while applying an inner pressure into a through-hole of a lead component mounting substrate: (a) In a primary soldering step, a lead component mounting substrate is lowered, and the rear surface thereof is put close to or brought into close contact with an upper end opening edge of a nozzle. Simultaneously, the soldering surface of the molten solder supplied to the nozzle is elevated. (b) In a secondary soldering step, the rear surface of the lead component mounting substrate is relatively spaced from the soldering surface of molten solder by lowering the soldering surface. (c) In a lead separating step, the lead component mounting substrate is elevated while tilting the lead component mounting substrate.

Abstract: To alleviate the absolute value control accuracy of phases in a mask having a groove shifter structure, transfer regions formed at different planar positions on the same plane of the same mask are subjected to a multiple exposure by scanning exposure. Although identical mask patterns are formed over the transfer regions respective groove shifters provided to these mask patterns are arranged opposite from each other.

Abstract: In order to suppress or prevent the occurrence of foreign matter in the manufacture of a semiconductor integrated circuit device by the use of a photo mask constituted in such a manner that a resist film is made to function as a light screening film, inspection or exposure treatment is carried out, when the photo mask 1PA1 has been mounted on a predetermined apparatus such as, e.g., an inspection equipment or aligner, in the state in which a mounting portion 2 of the predetermined apparatus is contacted with that region of a major surface of a mask substrate 1a of the photo mask 1PA1 in which a light shielding pattern 1b and a mask pattern 1mr, each formed of a resist film, on the major surface of the mask substrate 1a do not exist.

Abstract: A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

Abstract: A transmitter for averagedly suppressing the variation in input level of an amplifier according to variation in carrier level. The transmitter comprises an input power calculation section (16) for calculating mean input power of each carrier, an output power calculating section (17) for calculating mean output power of each carrier after the carrier band is limited, a monitoring section (18) for identifying a carrier having the maximum mean input power, acquiring the maximum value, acquiring the mean output power of the identified carrier, determining the ratio of the mean input power to the mean output power, and calculating level control information which is the ratio of the ratio determined above to a predetermined expected value, and a signal level adjusting section (15) for adjusting the level of a multicarrier signal by multiplying the level control information outputted from the monitoring section (18).

Abstract: An image data processing device has an image identifying unit and a file generating unit. The image identifying unit identifies a common image that is common to each page and a non-common image that differs from page to page on the basis of inputted image data including a plurality of pages. The file generating unit generates separate files of the common image and the non-common image.

Abstract: An automatic grading method has processes of reading, identifying and calculating. A process of reading a document is performed and the document has one or more answers. A process of identifying the answers from the document is also performed. A process of calculating a score of the document based on a score of each answer is performed.

Abstract: An area for fabricating a photomask having light-shielding patterns each formed of an organic film, and areas for fabricating a semiconductor integrated circuit device are provided within the same clean room. A manufacturing device and an inspecting device are commonly used during the fabrication of the photomask and the fabrication of the semiconductor integrated circuit device.

Abstract: An active region (L) with a metal insulator semiconductor field effect transistor (MISFET) (Qs) formed therein for selection of a DRAM memory cell, which makes up a memory cell of the DRAM, is arranged to have an island-like pattern that linearly extends in an X direction on one principal surface of a semiconductor substrate (1). The memory-cell selection MISFET (Qs) has an insulated gate electrode (7) (word line WL) that extends along a Y direction on the principal surface of the semiconductor substrate (1) with the same width kept along the length thereof, which gate electrode is arranged to oppose another gate electrode (7) (word line WL) adjacent thereto at a prespecified distance or pitch that is narrower than said width.

Abstract: Densely disposed patterns constituting a semiconductor integrated circuit device are divided into a first mask pattern and a second mask pattern 28B such that a phase shifter S can be disposed, and a predetermined pattern is transferred on a semiconductor substrate by multiple-exposure thereof. The second mask pattern 28B has a main light transferring pattern 26c1, a plurality of auxiliary light transferring patterns 26c2 disposed thereabout, and a phase shifter S disposed in the main light transferring pattern 26c1. The auxiliary light transferring patterns 26c2 are disposed such that respective distances from a center of each thereof to a center of the main light transferring pattern 26c1 are substantially equal. With this arrangement, a densely disposed pattern is transferred with sufficient process transfer margin.

Abstract: A chemical compound capable of emitting visible light and having electrical conductivity comprises a main chain that consists of at least one substituted or non-substituted 2,5-thiophenediyl group and at least one substituted or non-substituted 9-carbazolyl group that bonds to at least one of two terminals of the main chain. The chemical compound is used in a luminescent material, an EL device that includes a luminous layer, and a display apparatus that includes a plurality of EL devices.