Patents by Inventor Noritaka ISHIHARA

Noritaka ISHIHARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10522347
    Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: December 31, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Masashi Oota, Yoichi Kurosawa, Noritaka Ishihara
  • Patent number: 10461099
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: October 29, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
  • Patent number: 10439074
    Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: October 8, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masashi Tsubuku, Satoru Saito, Noritaka Ishihara
  • Publication number: 20190139783
    Abstract: A semiconductor device having high reliability is provided.
    Type: Application
    Filed: April 11, 2017
    Publication date: May 9, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Kazutaka KURIKI, Yuji EGI, Noritaka ISHIHARA, Yusuke NONAKA, Yasumasa YAMANE, Ryo TOKUMARU, Daisuke MATSUBAYASHI
  • Publication number: 20180337289
    Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 22, 2018
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Masashi TSUBUKU, Satoru SAITO, Noritaka ISHIHARA
  • Publication number: 20180323220
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Application
    Filed: July 2, 2018
    Publication date: November 8, 2018
    Inventors: Masahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
  • Patent number: 10084096
    Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: September 25, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Haruyuki Baba, Akio Suzuki, Hiromi Sawai, Masahiko Hayakawa, Noritaka Ishihara, Masashi Oota
  • Publication number: 20180233588
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Application
    Filed: April 9, 2018
    Publication date: August 16, 2018
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Patent number: 10038100
    Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: July 31, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Masashi Tsubuku, Satoru Saito, Noritaka Ishihara
  • Patent number: 10032928
    Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: July 24, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akihisa Shimomura, Yasumasa Yamane, Yuhei Sato, Takahisa Ishiyama, Kenichi Okazaki, Chiho Kawanabe, Masashi Oota, Noritaka Ishihara
  • Publication number: 20180151596
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 n?.
    Type: Application
    Filed: January 25, 2018
    Publication date: May 31, 2018
    Inventors: Masahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
  • Patent number: 9947777
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: April 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Patent number: 9911864
    Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Noritaka Ishihara, Masashi Oota, Masashi Tsubuku, Masami Jintyou, Yukinori Shima, Junichi Koezuka, Yasuharu Hosaka, Shunpei Yamazaki
  • Patent number: 9881939
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: January 30, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
  • Patent number: 9882058
    Abstract: A semiconductor device in which variation in electrical characteristics between transistors is reduced is provided. A transistor where a channel is formed in an oxide semiconductor layer is included, and a concentration of carriers contained in a region where the channel is formed in the oxide semiconductor layer is lower than or equal to 1×1015/cm3, preferably lower than or equal to 1×1013/cm3, more preferably lower than or equal to 1×1011/cm3, whereby an energy barrier height which electrons flowing between a source and a drain should go over converges at a constant value. In this manner, a semiconductor device in which variation in the electrical characteristics between the transistors is inhibited is provided.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: January 30, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Matsubayashi, Toshimitsu Obonai, Noritaka Ishihara, Shunpei Yamazaki
  • Patent number: 9871058
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: January 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
  • Publication number: 20180013005
    Abstract: After a sputtering gas is supplied to a deposition chamber, plasma including an ion of the sputtering gas is generated in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with the target, so that flat-plate particles and atoms of the target are separated from the target. The flat-plate particles are deposited with a gap therebetween so that the flat plane faces a substrate. The atom and the aggregate of the atoms separated from the target enter the gap between the deposited flat-plate particles and grow in the plane direction of the substrate to fill the gap. A film is formed over the substrate. After the deposition, heat treatment is performed at high temperature in an oxygen atmosphere, which forms an oxide with a few oxygen vacancies and high crystallinity.
    Type: Application
    Filed: September 7, 2017
    Publication date: January 11, 2018
    Inventors: Shunpei YAMAZAKI, Haruyuki BABA, Akio SUZUKI, Hiromi SAWAI, Masahiko HAYAKAWA, Noritaka ISHIHARA, Masashi OOTA
  • Patent number: 9831274
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Grant
    Filed: June 9, 2015
    Date of Patent: November 28, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
  • Patent number: 9825181
    Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm?3 and lower than or equal to 5×1016 cm?3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: November 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Kazuya Sugimoto, Tsutomu Murakawa, Motoki Nakashima, Shinpei Matsuda, Noritaka Ishihara, Daisuke Kurosaki, Toshimitsu Obonai, Hiroshi Kanemura, Junichi Koezuka
  • Patent number: 9806201
    Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: October 31, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshinori Yamada, Yusuke Nonaka, Masashi Oota, Yoichi Kurosawa, Noritaka Ishihara, Takashi Hamada, Mitsuhiro Ichijo, Yuji Egi