Abstract: A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P+-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P?-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N?-type impurity region that is located in the semiconductor layer under the P?-type impurity region and includes a portion that is under the pinning layer, and an N?-type impurity region that is in contact with the gate insulating film and the P?-type impurity region and is located so as to surround the N?-type impurity region in plan view.

Abstract: A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming a first light transmitting film having a peripheral edge that overlaps a light blocking portion in plan view ox the semiconductor substrate by a lift-off method; and (c2) forming a second light transmitting film at a position spaced apart from the first light transmitting film in plan view of the semiconductor substrate by the lift-off method, the second light transmitting film having a peripheral edge that overlaps the light blocking portion in plan view of the semiconductor substrate.

Abstract: A spectroscopic sensor has plural angle limiting filters that limit incident angles of incident lights, plural light band-pass filters that transmit specific wavelengths, and plural photodiodes to which corresponding transmitted lights are input. The spectroscopic sensor is a semiconductor device in which the angle limiting filters, the light band-pass filters, and the photodiodes are integrated, and, assuming that the surface on which impurity regions for the photodiodes are formed is a front surface of a semiconductor substrate, holes for receiving lights are formed in the impurity regions from the rear surface side.

Abstract: A current-limiting reactor that regulates a short-circuit current, a controller that controls an action of an inverter, and a detection unit that detects a short circuit. The controller causes the inverter to stop when a short circuit has occurred.

Abstract: A power supply apparatus includes a controller that performs the following action and resonance means for creating a resonance state between the power supply apparatus and a plasma generator. That is, the controller changes, when a value of electric power input equal to 100% (or a value of electric power input equal to or more than a threshold % and equal to or less than 100%) of a rated power is instructed, an inverter frequency and obtains an inverter output power factor for each of a plurality of inverter frequencies. Then, the controller determines, as a driving frequency of the inverter, one of the plurality of inverter frequencies at which the inverter output power factor is maximized.

Abstract: A power supply apparatus outputs an alternating-current voltage to a plasma generator being a capacitive load and the power supply apparatus has a configuration that a transformer included in the power supply apparatus has a secondary-side magnetizing inductance more than five times as great as a leakage inductance.

Abstract: A power supply apparatus includes a controller that performs the following action. The controller determines a target direct-current electric amount value in accordance with an external input. Then, the controller performs feedback control in such a manner that an amount of direct-current electric power input to an inverter reaches the target direct-current electric amount value.

Abstract: A spectroscopic sensor has plural angle limiting filters that limit incident angles of incident lights, plural light band-pass filters that transmit specific wavelengths, and plural photodiodes to which corresponding transmitted lights are input. The spectroscopic sensor is a semiconductor device in which the angle limiting filters, the light band-pass filters, and the photodiodes are integrated, and, assuming that the surface on which impurity regions for the photodiodes are formed is a front surface of a semiconductor substrate, holes for receiving lights are formed in the impurity regions from the rear surface side.

Abstract: A solid-state image capturing device according to the present invention includes: a first-conductivity-type well; a first second-conductivity-type diffusion layer that is provided in the first-conductivity-type well and generates carriers upon being irradiated with light; a second second-conductivity-type diffusion layer that is provided in the first-conductivity-type well and stores carriers that are generated in the first second-conductivity-type diffusion layer and are transmitted thereto; and a first first-conductivity-type diffusion layer provided below the second second-conductivity-type diffusion layer, wherein an impurity concentration of the second second-conductivity-type diffusion layer is higher than an impurity concentration of the first second-conductivity-type diffusion layer, and an impurity concentration of the first first-conductivity-type diffusion layer is lower than an impurity concentration of the first-conductivity-type well.

Abstract: In the present invention, a nitrogen-free ozone generating unit integrates a plurality of functional means into a single package unit, the functional means including a nitrogen-free ozone generator that is cooled to a low temperature, an ozone power source, a MFC, an APC, a heat insulating cooling water inlet pipe, and a heat insulating cooling water outlet pipe. In the nitrogen-free ozone generator, a heat insulating layer made of a heat insulating material such as an insulator is formed to cover substantially the entire surface of an ozone generator outer frame. A cooling water system is configured to set the temperature of cooling water, which is supplied to the nitrogen-free ozone generator through the heat insulating cooling water inlet pipe, to 5° C. or less and to thereby cool the nitrogen-free ozone generator.

Abstract: An aspect of the invention is a solid-state image capturing device that includes a P-type well 12, an N-type low concentration diffusion layer 18 formed in the P-type well 12, a P-type surface diffusion layer 16 formed on a surface of the N-type low concentration diffusion layer 18, and a P-type high concentration well 15 formed in a boundary region between a side surface of the N-type low concentration diffusion layer 18 and the P-type well 12.

Abstract: An angle limiting filter includes: a first light-shielding layer containing a first light-shielding material and provided with a first opening; a second light-shielding layer containing a second light-shielding material and located in a region which surrounds at least one portion of the first light-shielding layer; a third light-shielding layer containing the first light-shielding material, provided with a second opening at least one portion of which overlaps the first opening, and located above the first light-shielding layer; and a fourth light-shielding layer containing the second light-shielding material and located above the second light-shielding layer in a region which surrounds at least one portion of the third light-shielding layer.

Abstract: In the present invention, a gas pipe integrated block has a plurality of internal pipe paths. The plurality of internal pipe paths are connected to an ozone generator, control means, a raw gas supply port, an ozone gas output port, and cooling water inlet/outlet ports, to thereby form a unit in which a raw gas input pipe path and an ozone gas output pipe path are integrated. The raw gas input pipe path extends from the raw gas supply port through an automatic pressure controller to the ozone generator. The ozone gas output pipe path extends from the ozone generator through a gas filter, an ozone concentration meter, and a flow rate controller, to the ozone gas output port.

Abstract: An angle limiting filter includes: a first light-shielding layer containing a first light-shielding material and provided with a first opening; a second light-shielding layer containing a second light-shielding material and located in a region which surrounds at least one portion of the first light-shielding layer; a third light-shielding layer containing the first light-shielding material, provided with a second opening at least one portion of which overlaps the first opening, and located above the first light-shielding layer; and a fourth light-shielding layer containing the second light-shielding material and located above the second light-shielding layer in a region which surrounds at least one portion of the third light-shielding layer.

Abstract: In the present invention, a gas flow rate adjustment apparatus that outputs a raw material gas to an ozone generation apparatus is provided. The gas flow rate adjustment apparatus includes a plurality of flow rate adjustment parts, and outputs a second mixed gas serving as the raw material gas to the ozone generation apparatus. The second mixed gas includes an oxygen gas outputted from a first oxygen flow rate adjustment part and a first mixed gas outputted from a mixed gas flow rate adjustment part. The raw material gas generated by the gas flow rate adjustment apparatus, which includes an oxygen gas and a nitrogen gas, contains the nitrogen gas added to the oxygen gas with the rate of addition being in a range of more than 0 PPM and not more than 100 PPM.

Abstract: An angle restriction filter that allows light incident thereon in a predetermined range of incident angles to pass, includes: an optical path wall section formed from a plurality of light shield members laminated in layers including a common material, thereby forming an optical path in a lamination direction of the light shield members; and a light transmission section formed in a region surrounded by the optical path wall section.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: In the present invention, a gas pipe integrated block has a plurality of internal pipe paths. The plurality of internal pipe paths are connected to an ozone generator, control means, a raw gas supply port, an ozone gas output port, and cooling water inlet/outlet ports, to thereby form a unit in which a raw gas input pipe path and an ozone gas output pipe path are integrated. The raw gas input pipe path extends from the raw gas supply port through an automatic pressure controller to the ozone generator. The ozone gas output pipe path extends from the ozone generator through a gas filter, an ozone concentration meter, and a flow rate controller, to the ozone gas output port.

Abstract: An angle restriction filter that allows light incident thereon in a predetermined range of incident angles to pass, includes: an optical path wall section formed from a plurality of light shield members laminated in layers including a common material, thereby forming an optical path in a lamination direction of the light shield members; and a light transmission section formed in a region surrounded by the optical path wall section.