Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: In the present invention, a gas pipe integrated block has a plurality of internal pipe paths. The plurality of internal pipe paths are connected to an ozone generator, control means, a raw gas supply port, an ozone gas output port, and cooling water inlet/outlet ports, to thereby form a unit in which a raw gas input pipe path and an ozone gas output pipe path are integrated. The raw gas input pipe path extends from the raw gas supply port through an automatic pressure controller to the ozone generator. The ozone gas output pipe path extends from the ozone generator through a gas filter, an ozone concentration meter, and a flow rate controller, to the ozone gas output port.

Abstract: A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming a first light transmitting film having a peripheral edge that overlaps a light blocking portion in plan view ox the semiconductor substrate by a lift-off method; and (c2) forming a second light transmitting film at a position spaced apart from the first light transmitting film in plan view of the semiconductor substrate by the lift-off method, the second light transmitting film having a peripheral edge that overlaps the light blocking portion in plan view of the semiconductor substrate.

Abstract: In the present invention, a nitrogen-free ozone generating unit integrates a plurality of functional means into a single package unit, the functional means including a nitrogen-free ozone generator that is cooled to a low temperature, an ozone power source, a MFC, an APC, a heat insulating cooling water inlet pipe, and a heat insulating cooling water outlet pipe. In the nitrogen-free ozone generator, a heat insulating layer made of a heat insulating material such as an insulator is formed to cover substantially the entire surface of an ozone generator outer frame. A cooling water system is configured to set the temperature of cooling water, which is supplied to the nitrogen-free ozone generator through the heat insulating cooling water inlet pipe, to 5° C. or less and to thereby cool the nitrogen-free ozone generator.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: In the present invention, a gas flow rate adjustment apparatus that outputs a raw material gas to an ozone generation apparatus is provided. The gas flow rate adjustment apparatus includes a plurality of flow rate adjustment parts, and outputs a second mixed gas serving as the raw material gas to the ozone generation apparatus. The second mixed gas includes an oxygen gas outputted from a first oxygen flow rate adjustment part and a first mixed gas outputted from a mixed gas flow rate adjustment part. The raw material gas generated by the gas flow rate adjustment apparatus, which includes an oxygen gas and a nitrogen gas, contains the nitrogen gas added to the oxygen gas with the rate of addition being in a range of more than 0 PPM and not more than 100 PPM.

Abstract: A method for producing a carbon nanotube-containing conductor having a conductive layer on the surface of an objective substrate, the method including: pressing a carbon nanotube network layer, via a release substrate having the carbon nanotube network layer thereon, against a transparent objective substrate coated with an electron beam-curable liquid resin composition to infiltrate the liquid resin composition into the carbon nanotube network layer; irradiating it with electron beams to cure the liquid resin composition; and peeling away the release substrate to obtain an objective substrate having a resin composition layer with carbon nanotubes embedded in the surface thereof.

Abstract: An ozone gas output flow rate management unit configured to receive a plurality of ozone gas outputs from a plurality of ozone generation units and capable of performing an ozone gas output flow rate control for selectively outputting one or a combination of two or more of the plurality of ozone gas outputs to any of a plurality of ozone treatment apparatuses by performing an opening/closing operation of a plurality of ozone gas control valves provided in the ozone gas output flow rate management unit.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.

Abstract: An apparatus for producing high-concentration ozone gas has a plurality of adsorption/desorption columns and a plurality of valves capable of switching opening/closing of the passage of gas flowing into or out of the adsorption/desorption columns, such that each of the adsorption/desorption columns can performs ozone adsorption processing, evacuation processing or desorption processing. At least two of the adsorption/desorption columns are placed in a serial cycle arrangement to constitute a main adsorption/desorption column group, and one or more of the other adsorption/desorption columns is placed in parallel with the main adsorption/desorption column group to constitute an auxiliary adsorption/desorption column. The auxiliary adsorption/desorption column performs desorption processing during a period in which none of the adsorption/desorption columns of the main adsorption/desorption column group is performing desorption processing.

Abstract: Provided is an ozone concentrator including an ozone generator (3), adsorption/desorption columns (4) in which silica gel (6) cooled with a certain-temperature refrigerant (25) for concentrating ozone generated by the ozone generator (3) is packed, a refrigerating machine (23) for cooling the refrigerant (25), a vacuum pump (20) for enhancing a concentration of the ozone in one of the adsorption/desorption columns (4) by discharging mainly oxygen from the silica gel (6) adsorbing the ozone, a plurality of valves (8) to (13) for air pressure operations, for switching passages of gas that is allowed to flow in or flow out with respect to the adsorption/desorption columns (4), and ozone concentration meters (28, 29) for measuring the concentration of the ozone enhanced by the vacuum pump (20), in which a discharge line of the vacuum pump (20) is connected to another one of the adsorption/desorption columns (4), whereby the ozone is allowed to pass through another one of the adsorption/desorption columns again.