Patents by Inventor Noriyuki Sakuma
Noriyuki Sakuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9766106Abstract: A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.Type: GrantFiled: November 28, 2011Date of Patent: September 19, 2017Assignee: Hitachi Automotive Systems, Ltd.Inventors: Norio Ishitsuka, Keiji Hanzawa, Yasuo Onose, Noriyuki Sakuma
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Patent number: 9719824Abstract: A thermal air flow sensor that offers high flow rate measurement accuracy is provided. The thermal air flow sensor includes a measuring element. The measuring element includes: a semiconductor substrate; a heating resistor and a temperature measuring resistor both formed as a result of thin films being stacked over the semiconductor substrate; an electronic insulator including a silicon oxide film; and a diaphragm portion formed after part of the semiconductor substrate is removed. The heating resistor and the temperature measuring resistor are formed over the diaphragm portion. In the thermal air flow sensor, a ratio of an area occupied by the thin films to an area of the measuring element ranges between 40% and 60%.Type: GrantFiled: June 28, 2013Date of Patent: August 1, 2017Assignee: Hitachi Automotive Systems, Ltd.Inventors: Norio Ishitsuka, Yasuo Onose, Noriyuki Sakuma, Hiroshi Nakano
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Patent number: 9379302Abstract: In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.Type: GrantFiled: April 16, 2014Date of Patent: June 28, 2016Assignee: Hitachi Automotive Systems, Ltd.Inventor: Noriyuki Sakuma
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Publication number: 20160091524Abstract: A low-noise and high-sensitivity inertial sensor is provided. On the assumption that a movable portion VU1 and a movable portion VU2 are formed in the same SOI layer, the movable portion VU1 and the movable portion VU2 are mechanically connected to each other by a mechanical coupling portion MCU even while these movable portions are electrically isolated from each other. Thereby, according to a sensor element SE in the invention, it is possible to further suppress a shift between the capacitance of a MEMS capacitor 1 and the capacitance of a MEMS capacitor 2.Type: ApplicationFiled: August 10, 2015Publication date: March 31, 2016Inventors: Yuudai KAMADA, Atsushi ISOBE, Noriyuki SAKUMA, Takashi OSHIMA, Yuki FURUBAYASHI
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Publication number: 20160091525Abstract: An acceleration sensor that achieves a simultaneous operation method of a signal detection and a servo control is provided as an alternative to a time-division processing method. The acceleration sensor is a MEMS capacitive acceleration sensor. The acceleration sensor includes signal detection capacitor pairs 12, 15, and DC servo control capacitor pairs 13, 16, and AC servo control capacitor pairs 14, 17, which are different from the signal detection capacitor pairs 12, 15. A voltage that generates a force in a direction opposite to a detection signal of acceleration detected by the signal detection capacitor pairs 12, 15 is applied to the DC servo control capacitor pairs 13, 16 and the AC servo control capacitor pairs 14, 17.Type: ApplicationFiled: September 16, 2015Publication date: March 31, 2016Inventors: Takashi OSHIMA, Atsushi ISOBE, Yuudai KAMADA, Noriyuki SAKUMA, Yuki FURUBAYASHI
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Publication number: 20150330820Abstract: A thermal type sensor molded from a mold resin having an opening has a problem in that the residual stress of the mold resin in the opening causes peeling at the interface having poor adhesion. A physical quantity sensor has a construction having a semiconductor chip having a detector unit 3, a frame 8a on which the semiconductor chip is mounted, a mold resin portion 10 which encapsulates the semiconductor chip and the frame and has an opening through which the detector unit is exposed to the outside, and a stress absorbing layer 6 which is formed between an end of the opening in the mold resin portion and a wiring layer formed in the detector unit, and which is formed from a metal material that absorbs a stress from the end.Type: ApplicationFiled: October 15, 2013Publication date: November 19, 2015Inventor: Noriyuki SAKUMA
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Publication number: 20150300857Abstract: A thermal air flow sensor that offers high flow rate measurement accuracy is provided. The thermal air flow sensor includes a measuring element. The measuring element includes: a semiconductor substrate; a heating resistor and a temperature measuring resistor both formed as a result of thin films being stacked over the semiconductor substrate; an electronic insulator including a silicon oxide film; and a diaphragm portion formed after part of the semiconductor substrate is removed. The heating resistor and the temperature measuring resistor are formed over the diaphragm portion. In the thermal air flow sensor, a ratio of an area occupied by the thin films to an area of the measuring element ranges between 40% and 60%.Type: ApplicationFiled: June 28, 2013Publication date: October 22, 2015Inventors: Norio ISHITSUKA, Yasuo ONOSE, Noriyuki SAKUMA, Hiroshi NAKANO
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Publication number: 20150221845Abstract: In a thermoelectric conversion device, support substrates (13, 14), electrodes (11, 12) formed on the support substrates and thermoelectric conversion parts (7, 10) formed on the electrodes and containing semiconductor glass are disposed. The semiconductor glass is non-lead glass containing vanadium, and the electrodes contain any of Al, Ti, Ti nitride, W, W nitride, W silicide, Ta, Cr and Si. This constitution makes it possible to provide a device structure which can be produced by an inexpensive production process, uses a composite material with an excellent thermoelectric conversion characteristic and can solve the characteristic problem of the composite material. As a result, it is possible to provide a thermoelectric conversion device with excellent characteristics and high reliability at a low cost.Type: ApplicationFiled: August 31, 2012Publication date: August 6, 2015Inventors: Chisaki Takubo, Hideaki Takano, Kengo Asai, Takashi Naito, Tadashi Fujieda, Yuichi Sawai, Noriyuki Sakuma
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Publication number: 20150213999Abstract: The ordinary charged particle beam apparatus works on the assumption that signals are detected while its diaphragm and the sample are being positioned close to each other. This structure is not suitable for observing a sample with a prominently uneven surface in a gas atmosphere at atmospheric pressure or at a pressure substantially equal thereto. The present invention provides a charged particle beam apparatus that separates its charged particle optical tube from the space in which the sample is placed. The apparatus includes a detachable diaphragm that lets a primary charged particle beam permeate or pass therethrough. Installed in the space where the sample is placed is a detector that detects secondary particles discharged from the sample irradiated with the primary charged particle beam.Type: ApplicationFiled: July 1, 2013Publication date: July 30, 2015Inventors: Yusuke Ominami, Noriyuki Sakuma, Shinsuke Kawanishi, Masahiko Ajima, Sukehiro Ito
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Publication number: 20150206705Abstract: A member for a charged particle beam device (56), which is used for a charged particle beam device (1c), includes a frame (55) to be attached to a frame (3c), and a diaphragm element (18a) provided in the frame (55). In the diaphragm element (18a), a diaphragm (19), which air-tightly separates the inside and the outside of a vacuum chamber (4a) from each other in a state where the pressure inside the vacuum chamber (4a) partitioned by the frame (3c) and the frame (55) is reduced more than the pressure outside the vacuum chamber (4a), and allows a charged particle beam to be transmitted therethrough, is formed. Moreover, in the diaphragm element (18a), a buffer film (33) for preventing a sample (12) and the diaphragm (19) from coming into contact with each other is formed so as to be positioned on a sample stage (22) side rather than on the diaphragm (19).Type: ApplicationFiled: July 11, 2013Publication date: July 23, 2015Applicant: Hitachi High- Technologies CorporationInventors: Noriyuki Sakuma, Yusuke Ominami
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Publication number: 20140284753Abstract: A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.Type: ApplicationFiled: November 28, 2011Publication date: September 25, 2014Applicant: Hitachi Automotive Systems, Ltd.Inventors: Norio Ishitsuka, Keiji Hanzawa, Yasuo Onose, Noriyuki Sakuma
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Publication number: 20140227819Abstract: In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.Type: ApplicationFiled: April 16, 2014Publication date: August 14, 2014Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventor: Noriyuki SAKUMA
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Patent number: 8714008Abstract: In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.Type: GrantFiled: January 16, 2012Date of Patent: May 6, 2014Assignee: Hitachi Automotive Systems, Ltd.Inventor: Noriyuki Sakuma
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Patent number: 8468883Abstract: A thermal type fluid flow sensor includes an air flow detecting portion and a temperature detecting portion formed above the same substrate, capable of correcting a humidity, and having a high measuring accuracy at a low cost, and a heat generating resistor, a temperature measuring resistor for the heat detecting resistor, a temperature measuring resistor for detecting an air flow, and a heat generating resistor for detecting a humidity are arranged in a diaphragm formed above a semiconductor substrate, an air cavity layer, and a protecting film above the air cavity layer are formed above the heat generating resistor for detecting the humidity, and the protecting film is provided with plural holes reaching the air cavity layer.Type: GrantFiled: October 8, 2010Date of Patent: June 25, 2013Assignee: Hitachi Automotive Systems, Ltd.Inventor: Noriyuki Sakuma
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Patent number: 8429964Abstract: A thermal fluid flow sensor having a diaphragm structure body configured by an insulating film formed by stacking a film having compressive stress and a film having tensile stress on the top and bottom of a temperature-measuring resistive element and a heater resistive element which are processed by microprocessing is provided. The insulating film at a lower layer of the heater resistive element, a temperature-measuring resistive element for heater resistive element, upstream temperature-measuring resistive elements, and downstream temperature-measuring resistive elements, has films having compressive stress (a first insulating film, a third insulating film, and a fifth insulating film) and films having tensile stress (a second insulating film and a fourth insulating film) being alternately arranged, and two layers or more of the films having tensile stress are arranged.Type: GrantFiled: December 8, 2009Date of Patent: April 30, 2013Assignee: Hitachi Automotive Systems, Ltd.Inventor: Noriyuki Sakuma
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Publication number: 20120240674Abstract: In a thermal sensor with a detection part and a circuit part formed on the same substrate, an insulating film for protection of the circuit part causes problems of lowering in sensitivity of a heater, deterioration in accuracy due to variation of a residual stress in the detection part, etc. A layered film including insulating films is formed on a heating resistor, an intermediate layer is formed thereon, and a layered film including insulating films is formed further thereon. The intermediate layer is specified to be a layer made up of any one of aluminum nitride, aluminum oxide, silicon carbide, titanium nitride, tungsten nitride, and titanium tungsten. This configuration enables the layered film on the upper part of the detection part to be removed using the intermediate layer as an etch stop layer, which solves problems of lowering in sensitivity, a variation in residual stress, etc. resulting from these.Type: ApplicationFiled: January 16, 2012Publication date: September 27, 2012Inventor: Noriyuki SAKUMA
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Publication number: 20110107832Abstract: A thermal type fluid flow sensor includes an air flow detecting portion and a temperature detecting portion formed above the same substrate, capable of correcting a humidity, and having a high measuring accuracy at a low cost, and a heat generating resistor, a temperature measuring resistor for the heat detecting resistor, a temperature measuring resistor for detecting an air flow, and a heat generating resistor for detecting a humidity are arranged in a diaphragm formed above a semiconductor substrate, an air cavity layer, and a protecting film above the air cavity layer are formed above the heat generating resistor for detecting the humidity, and the protecting film is provided with plural holes reaching the air cavity layer.Type: ApplicationFiled: October 8, 2010Publication date: May 12, 2011Applicant: Hitachi Automotive Systems, Ltd.Inventor: Noriyuki SAKUMA
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Patent number: 7886594Abstract: A thermal-type fluid flow sensor is provided to measure an air flow rate flowing through an air intake passage.Type: GrantFiled: February 3, 2010Date of Patent: February 15, 2011Assignee: Hitachi, Ltd.Inventor: Noriyuki Sakuma
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Patent number: 7816702Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof.Type: GrantFiled: October 3, 2008Date of Patent: October 19, 2010Assignee: Hitachi, Ltd.Inventors: Shinichi Saito, Masahiro Aoki, Hiroyuki Uchiyama, Hideo Arimoto, Noriyuki Sakuma, Jiro Yamamoto
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Patent number: RE43660Abstract: The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an ?-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.Type: GrantFiled: July 28, 2010Date of Patent: September 18, 2012Assignee: Hitachi, Ltd.Inventors: Noriyuki Sakuma, Naoki Yamamoto, Kenichi Takeda, Hiroshi Fukuda