Abstract: A PMOS output stage and an NMOS output stage of which output impedances are controlled in accordance with impedance codes, a gate control part which drives output transistors held by the PMOS output stage and the NMOS output stage, and a slew rate control part which generates bias voltages to control driving ability of the gate control part based on an input current are included, and manufacturing variability of an input current circuit generating an input current is corrected by using the impedance code by the slew rate control part.

Abstract: In a semiconductor device, a selector selects a different reference voltage depending on whether the impedance of a transmitter or of a receiver is to be adjusted, and causes a reference voltage generator to generate the selected reference voltage. The reference voltage generator generates the reference voltage selected by the selector and applies the generated reference voltage to an impedance adjuster. The impedance adjuster adjusts the impedance of the transmitter and the impedance of the receiver, separately from each other, in accordance with the input reference voltage.

Abstract: A signal receiving circuit includes a phase detection unit and a delay control unit. The phase detection unit detects a phase difference between a received signal and a clock signal. The delay control unit receives the phase difference, delays a phase of the received signal in a range not exceeding a delay amount determined by using a predetermined phase difference as a unit, and changes, when the phase difference exceeds the predetermined phase difference, a delay amount of the received signal by using the predetermined phase difference as a unit.

Abstract: A signal restoration circuit includes a storage configured to store input signals by disposing the input signals in an input order, the input signals being readable from the storage in the disposed order, and a storage controller configured to control delay time from an input of the input signal to an output in the storage based on delay information of the input signal.

Abstract: In a semiconductor device, a selector selects a different reference voltage depending on whether the impedance of a transmitter or of a receiver is to be adjusted, and causes a reference voltage generator to generate the selected reference voltage. The reference voltage generator generates the reference voltage selected by the selector and applies the generated reference voltage to an impedance adjuster. The impedance adjuster adjusts the impedance of the transmitter and the impedance of the receiver, separately from each other, in accordance with the input reference voltage.

Abstract: A memory control circuit has a write leveling function and controls read/write operations by supplying a clock signal to a plurality of memories through a clock signal line which is wired to the plurality of memories through daisy chain connection. For each of the plurality of memories, a first variable delay unit delays, in a write operation, a data strobe signal output to the memory by a first delay time that is set by utilizing the write leveling function and a second variable delay unit delays, in a read operation, a data signal input from the memory by a second delay time that is set based on the first delay time.

Abstract: Variable delay circuit constructed by connecting plural unit circuits in series which can change a delay time from input of signal until output of the signal by increasing or decreasing the number of unit circuits through which the signal concerned is passed. Each of the unit circuits is operable in a through operation mode in which a signal input from a unit circuit at the front stage is output to a unit circuit at the rear stage and also a signal input from a unit circuit at the rear stage is output to a unit circuit at the front stage and a feedback operation mode in which a signal input from a unit circuit at the front stage to a unit circuit at the front stage and a signal input from a unit circuit at the rear stage is output to a unit circuit at the rear stage.

Abstract: A memory control circuit has a write leveling function and controls read/write operations by supplying a clock signal to a plurality of memories through a clock signal line which is wired to the plurality of memories through daisy chain connection. For each of the plurality of memories, a first variable delay unit delays, in a write operation, a data strobe signal output to the memory by a first delay time that is set by utilizing the write leveling function and a second variable delay unit delays, in a read operation, a data signal input from the memory by a second delay time that is set based on the first delay time.

Abstract: A driver circuit for driving a device or circuit disposed after it comprises a plurality of driving transistors connected in parallel, a selection unit for selecting one or more groups from a plurality of groups to each of which driving transistors having a power base of two with the same polarity belong and in which the number of driving transistors belonging to each group is different and a driving unit for driving driving transistors belonging to the group selected by the selection unit.

Abstract: A digital DLL device is provided which can reduce an error with respect to a target delay amount. The device provides a delay to an input clock signal so as to equally divide a clock cycle T thereof into N parts, and includes first variable delay sections and second variable delay sections, each of which is formed of an arbitrary number of unit delay buffers connected in series with one another. A phase comparison section makes a compare between the phase of the input clock signal and the phase of an output signal which is the input signal having been delayed while passing through all the first and second variable delay sections, and outputs a result of the comparison. A delay control section calculates a total number of unit delay buffers S required based on the phase comparison result, sets a quotient Q of S divided by N to be the number of unit delay buffers for each of the first variable delay sections, and allocates a remainder R of S divided by N to the second variable delay sections, respectively.

Abstract: A semiconductor circuit is disclosed, including a DLL circuit for supplying a desired signal-delay amount. The DLL circuit includes detecting means for detecting variations of a signal-delay amount, and delay-amount control means for generating a delay-amount control signal for controlling, depending on the variations of the signal-delay amount detected by the detecting means, the signal-delay amount of the DLL circuit. The semiconductor circuit further includes a part for monitoring circuit performance of the semiconductor circuit based on the delay-amount control signal.

Abstract: A method for compensating for semiconductor device resistance is disclosed that includes the step of realizing a resistance equal to a desired resistance by one of combinations of multiple semiconductor devices. This step includes the step of sequentially selecting two or more of the semiconductor devices to be combined, and thereby sequentially changing a resistance realized by the selected two or more of the semiconductor devices to be combined.

Abstract: A digital DLL device is provided which can reduce an error with respect to a target delay amount. The device provides a delay to an input clock signal so as to equally divide a clock cycle T thereof into N parts, and includes first variable delay sections and second variable delay sections, each of which is formed of an arbitrary number of unit delay buffers connected in series with one another. A phase comparison section makes a compare between the phase of the input clock signal and the phase of an output signal which is the input signal having been delayed while passing through all the first and second variable delay sections, and outputs a result of the comparison. A delay control section calculates a total number of unit delay buffers S required based on the phase comparison result, sets a quotient Q of S divided by N to be the number of unit delay buffers for each of the first variable delay sections, and allocates a remainder R of S divided by N to the second variable delay sections, respectively.

Abstract: A termination circuit for terminating a transmission line comprises a resistance unit which is formed by connecting a P-channel type MOS transistor and an N-channel type MOS transistor in parallel, and Thevenin termination is formed by providing this resistance unit between the transmission line and a power supply line and between the transmission line and a ground line.

Abstract: A digital DLL device is provided which can reduce an error with respect to a target delay amount. The device provides a delay to an input clock signal so as to equally divide a clock cycle T thereof into N parts, and includes first variable delay sections and second variable delay sections, each of which is formed of an arbitrary number of unit delay buffers connected in series with one another. A phase comparison section makes a compare between the phase of the input clock signal and the phase of an output signal which is the input signal having been delayed while passing through all the first and second variable delay sections, and outputs a result of the comparison. A delay control section calculates a total number of unit delay buffers S required based on the phase comparison result, sets a quotient Q of S divided by N to be the number of unit delay buffers for each of the first variable delay sections, and allocates a remainder R of S divided by N to the second variable delay sections, respectively.

Abstract: A signal transmission method and a signal transmission device capable of easily transmitting a signal with a small number of signal lines. A data signal of time slot count N+? with bit count N is longitudinal-lateral converted into a data signal of time slot count N with bit count N+?. so as to create a null time ? and a control signal is inserted into the null time ?, thereby converting the parallel signal containing the data signal and the control signal into a serial signal for transmission.

Abstract: A semiconductor circuit is disclosed, including a DLL circuit for supplying a desired signal-delay amount. The DLL circuit includes detecting means for detecting variations of a signal-delay amount, and delay-amount control means for generating a delay-amount control signal for controlling, depending on the variations of the signal-delay amount detected by the detecting means, the signal-delay amount of the DLL circuit. The semiconductor circuit further includes a part for monitoring circuit performance of the semiconductor circuit based on the delay-amount control signal.

Abstract: A method for compensating for semiconductor device resistance is disclosed that includes the step of realizing a resistance equal to a desired resistance by one of combinations of multiple semiconductor devices. This step includes the step of sequentially selecting two or more of the semiconductor devices to be combined, and thereby sequentially changing a resistance realized by the selected two or more of the semiconductor devices to be combined.

Abstract: A driver circuit for driving a device or circuit disposed after it comprises a plurality of driving transistors connected in parallel, a selection unit for selecting one or more groups from a plurality of groups to each of which driving transistors having a power base of two with the same polarity belong and in which the number of driving transistors belonging to each group is different and a driving unit for driving driving transistors belonging to the group selected by the selection unit.

Abstract: A termination circuit for terminating a transmission line comprises a resistance unit which is formed by connecting a P-channel type MOS transistor and an N-channel type MOS transistor in parallel, and Thevenin termination is formed by providing this resistance unit between the transmission line and a power supply line and between the transmission line and a ground line.