Abstract: A CCD output signal reproduction apparatus is applied to a solid state image sensor that performs a swing-driven image pickup operation. This image sensor is synchronized with one frame period and swings periodically and relatively in relation to incident light to pickup the image while changing the sampling positions in the A and B field periods. The carrier generator produces first and second sinusoidal carrier signals which have the same frequency as that of the read out frequency of the image sensor. An amplitude modulator modulates the carrier signals in response to the waveforms of the image signals supplied from the image sensor. Accordingly, amplitude-modulated A, B field image signals, which are phase-shifted by half the pixel pitch of the pixel arrangement of the image sensor. A carrier clamp circuit forcibly clamps the different peak potentials of the carrier waveforms of the amplitude-modulated field image signals to the reference potential level.

Abstract: A method of manufacturing a "two-level" solid-state image pickup device wherein a portion of a first metallic electrode electrically connected to a signal storage region is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections of the first metallic electrode. A second metallic electrode constituting a pixel electrode is connected to the first electrode at the exposed portion thereof.

Abstract: A solid-state image sensing device, such as an interline-transfer type charge-coupled device (IT-CCD), produces signal carriers in response to incident light and generates an image pickup signal. One frame of the image signal is formed of two fields. The CCD chip is coupled to fixed bimorph piezoelectric vibrators by which it is given a wobbling-swing drive during image pickup. This wobbling-swing drive is controlled by a vibration controller. This vibration controller controls the vibration mode of the bimorph piezoelectric elements to apply a first vibration (swing vibration) to the CCD such that each pixel cell is displaced to a different sampling position in the plurality of field periods included in one frame period for image pickup, and applying a second vibration, i.e., a swing vibration with wobbling superposed, to the CCD such that each pixel cell is wobbled while picking up an image in each sampling position, which is positioned in each field period.

Abstract: In an image sensing system, a solid-state image sensor is mounted on a vibration stand in a manner as to vibrate horizontally to an incoming light in synchronization with one frame period, thereby sensing while alternatively displacing at different sampling positions in two field periods. Field image signals from the image sensor is supplied, through a signal processor, to a signal reproduction unit which includes a carrier generator for producing first and second carrier signals having the same frequency as the horizontal readout frequency of the image sensor and a phase in reverse to one other in the field periods, and an AM modulator for amplitude-modulating the carrier signal. The amplitude modulation field signals thus obtained are sliced at a suitable level by a slicer and then synthesized each other to obtain a frame image signal.

Abstract: A solid-state image sensing device such as an interline-transfer type charge coupled device generates signal charges in response to incident light to produce an image signal. The CCD output signal includes a mixed reset pulse component from a reset pulse driver to the IT-CCD, as well as an image signal component corresponding to the signal charges. When the IT-CCD contains a defective picture element, position data of the defective picture element is stored into an address memory. An amplitude controller detects an increment of a signal level corresponding to a dark current generated at the defective picture element, and temporarily decreases the amplitude of the reset pulse only when the image signal is output from the defective picture element. In this way, the mixed reset pulse contained in the image signal output from the defective picture element is reduced, thereby subtracting the signal level increment from the CCD output signal produced from the defective picture element.

Abstract: There is disclosed a solid state image sensor including an interline transfer charge coupled device (IT-CCD) serving as an area image sensor and a vibrating plate for vibrating or swinging the IT-CCD in a plane orthogonal to an incident image light, horizontally, periodically and relatively to the incident image light in a given vibration mode. When the solid state image sensor is applied for NTSC television system in which one frame is composed of two fields, the IT-CCD is vibrated so that it senses an image at different positions during the two fields periods. As a result, a reproduced picture has a resolution which is obtained as if the number of picture elements of the image sensor per se is doubled.

Abstract: A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.

Abstract: An electronic still camera is disclosed which includes a solid state image sensor such as charge transfer device (CTD) and a shutter mechanism. For obtaining a still picture of one frame composed of two fields according to an NTSC television system, the shutter mechanism is driven so as to be opened before and after a signal charge read out period of a CTD by a shutter period control circuit. With this arrangement, the field image light is incident on the CTD in every field period.

Abstract: A solid-state optical device with a plurality of cells having a plurality of optical functions is disclosed. Each of the cells comprises a transparent substrate, an anti-reflection film formed on the lower surface of the transparent substrate, a MOS transistor and a capacitor formed on the upper surface of the transparent substrate, a liquid crystal display device formed on the MOS transistor and capacitor, and window for leading a light signal incident on the liquid crystal display device from above to the transparent substrate. At least either a channel region of the MOS transistor and a region intervening between pair electrodes of the capacitor is formed of a photoconductive film. A transparent medium intervenes between the transparent substrate and photoconductive film such that light signal led through the window to the transparent substrate is reflected by an object disposed in contact with anti-reflection film to reach the photoconductive film, thereby generating carriers therein.

Abstract: A thin amorphous film-forming apparatus comprising a plurality of discharge unit chambers connected in a loop, each provided with a glow discharge generating means and a space for storing a substrate, gas supply and discharge valves are provided between the unit chambers, and means for periodically changing the opening and closing of the valves.

Abstract: A solid state image-sensing device which comprises an image-sensing area formed of a plurality of matrix-arranged cells exposed to an introduced image light and an optical black connected to a readout section in parallel relationship with the image-sensing area. An image light is prevented from entering the optical black. Only noise charges (dark current charges) sent forth from the optical black are transferred to a control circuit. A gate electrode control signal for eliminating charges whose amount corresponds to that of the noise charges from the total charges collected in the storage regions of the matrix-arranged cells of the image-sensing area is produced by a control circuit. The gate electrode control signal is supplied to a gate electrode positioned between the photosensing section and vertical transfer section of the cells of the image-sensing area. A potential well lying under the gate electrode has its depth controlled by the gate electrode control signal.

Abstract: A lag control electrode is mounted on that portion of a cell constituting a picture element which is disposed on one end portion of an N.sup.+ layer. A gate electrode is provided close to the other end portion of the N.sup.+ layer. Where a picture light enters a solid state image sensor, then a signal charge is generated in a P type semiconductor substrate. The signal charge thus produced is collected in the N.sup.+ layer. Only during the period in which the lag control electrode is impressed with a prescribed level of voltage, then part of the signal charge is trapped in interface states between that portion of a SiO.sub.2 layer which lies below the lag control electrode and the N.sup.+ layer. Only during the period in which the gate electrode is impressed with a prescribed level of voltage, the signal charge collected in the N.sup.+ layer is delivered to the channel layer of a CCD shift register.

Abstract: A MOSFET consisting of a source region, a drain region and a gate layer is formed on a p-type semiconductor substrate. Field insulation layers are formed to surround the MOSFET, and conductive electrodes are formed thereover. A photosensing layer is overlayed on this structure. This photosensing layer is made of an amorphous chalcogen glass semiconductor material, for example Se-As-Te, and is in contact with the source region through an opening. A charge packet generated within the photosensing layer is transferred to the source region by an electric field induced when a voltage is applied to the conductive electrodes.

Abstract: A plurality of photosensitive sections, each having two photosensitive rows, and a plurality of readout sections, each having two readout rows, are alternately distributed in the horizontal direction. The picture element signals of the photosensitive rows each adjacent to each of two readout rows are synthesized for each line. Pseudo-picture element signals are synthesized from the synthesized picture element signals, and the pseudo-picture element signals are used as the picture element signals corresponding to the readout sections.

Abstract: A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.

Abstract: A manufacturing method of semiconductor device having a single layer or multilayer of polycrystalline semiconductor including doped impurity is provided which comprises a step of forming a first polycrystalline semiconductor layer with doped impurity on a semiconductor substrate and another step of forming a second polycrystalline semiconductor layer without doped impurity on the first polycrystalline semiconductor layer. The manufacturing method of the invention provides excellent MOS FET's in the semiconductor device of which the threshold voltage varies little. High reliable semiconductor device may further be manufactured with a high yield.

Abstract: A method for manufacturing an MOS FET includes a step of forming a p.sup.+ -type layer in a p-type substrate by injecting ions into the substrate through a field oxide film using a mask layer and removing the portion of the field oxide film under the mask layer.

Abstract: A charge transfer device having control means for its photoelectric conversion characteristics comprises means for applying a first integration voltage having a prescribed level to integration electrodes of the device during a prescribed initial time length of a given carrier integration period of one frame period, and means for applying during the remaining integration period a second integration voltage having a level higher than the level of the first integration voltage at the terminating time point of said initial period to said integration electrodes.

Abstract: A charge transfer apparatus having light sensitivity control means comprises a charge transfer device wherein a plurality of electrodes are provided on a semiconductor substrate in a manner insulated therefrom, means for supplying a driving pulse waveform of a constant period covering an integration period and a transfer-readout period to each of said electrodes of charge transfer device, detecting means for detecting the amount of light incident into the charge transfer device or the output signal level from the charge transfer device, and control means for controlling the width of an integration pulse within said integration period in accordance with the signal detected by the detecting means.