Patents by Inventor Oliver Blank

Oliver Blank has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210104470
    Abstract: A semiconductor wafer has a semiconductor body, an insulation layer on the semiconductor body, a scribeline region designated to be subjected to a wafer separation processing stage, and an optically detectable reference feature laterally spaced inward from the scribeline region and configured to serve as a reference position during the wafer separation processing stage. A corresponding method of processing the semiconductor wafer, a power semiconductor die and a semiconductor wafer separation apparatus are also described.
    Type: Application
    Filed: December 18, 2020
    Publication date: April 8, 2021
    Inventor: Oliver Blank
  • Publication number: 20210098580
    Abstract: First trenches extend from a process surface into a semiconductor layer. An alignment layer with mask pits in a with respect to the process surface vertical projection of the first trenches is formed on the process surface. Sidewalls of the mask pits have a smaller tilt angle with respect to the process surface than sidewalls of the first trenches. The mask pits are filled with an auxiliary material. A gate trench for a gate structure is formed in a mesa section of the semiconductor layer between the first trenches, wherein the auxiliary material is used as an etch mask.
    Type: Application
    Filed: December 11, 2020
    Publication date: April 1, 2021
    Inventors: Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip
  • Publication number: 20210066459
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a gate structure extending from a first surface into the semiconductor substrate, a plurality of needle-shaped first field plate structures extending from the first surface into the semiconductor substrate, body regions of a second conductivity type, and source regions of a first conductivity type formed between the body regions and the first surface. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The needle-shaped first field plate structures are arranged in a first pattern and the needle-shaped second field plate structures are arranged in a second pattern.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 4, 2021
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, C├ędric Ouvrard, Li Juin Yip
  • Patent number: 10910318
    Abstract: A semiconductor wafer has a semiconductor body, an insulation layer on the semiconductor body, an active region with a power semiconductor die, the active region forming a part of the semiconductor body, a scribeline region arranged adjacent to the active region, and a passivation structure arranged above the insulation layer and exposing a section of the insulation layer. The exposed section of the insulation layer is terminated by a termination edge of the passivation structure. The semiconductor wafer also has an optically detectable reference feature configured to serve as a reference position during a wafer separation processing stage. The optically detectable reference feature is included in the active region, spatially displaced from the termination edge, and exposed by the passivation structure.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: February 2, 2021
    Assignee: Infineon Technologies Austria AG
    Inventor: Oliver Blank
  • Patent number: 10903321
    Abstract: First trenches extend from a process surface into a semiconductor layer. An alignment layer with mask pits in a with respect to the process surface vertical projection of the first trenches is formed on the process surface. Sidewalls of the mask pits have a smaller tilt angle with respect to the process surface than sidewalls of the first trenches. The mask pits are filled with an auxiliary material. A gate trench for a gate structure is formed in a mesa section of the semiconductor layer between the first trenches, wherein the auxiliary material is used as an etch mask.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: January 26, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Martin Poelzl, Oliver Blank, Franz Hirler, Maximilian Roesch, Li Juin Yip
  • Publication number: 20210005543
    Abstract: In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure located on the first surface. The metallization structure includes a first conductive layer on the first surface, a first insulating layer on the first conductive layer, a second conductive layer on the first insulating layer, a second insulating layer on the second conductive layer and a third conductive layer on the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.
    Type: Application
    Filed: July 2, 2020
    Publication date: January 7, 2021
    Inventors: Oliver Blank, Gerhard Noebauer
  • Patent number: 10879363
    Abstract: A power semiconductor die has a semiconductor body coupled to a first load terminal and a second load terminal of the power semiconductor die and configured to conduct a load current between the load terminals. The die further comprises: a control trench structure for controlling the load current, the control trench structure extending into the semiconductor body along a vertical direction and arranged in accordance with a horizontal grid pattern having a plurality of grid openings; a plurality of power cells, each power cell being, in a horizontal cross-section, at least partially arranged in a respective one of the plurality of grid openings.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: December 29, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Marcel Rene Mueller, Cedric Ouvrard
  • Patent number: 10872957
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The first field plate structures form a first portion of a regular pattern and the second field plate structures form a second portion of the same regular pattern.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: December 22, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard, Li Juin Yip
  • Patent number: 10868172
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: December 15, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Patent number: 10868173
    Abstract: A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: December 15, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet, Harsh Naik, Ralf Siemieniec, Li Juin Yip
  • Patent number: 10811531
    Abstract: Disclosed is a transistor device with at least one gate electrode, a gate runner connected to the at least one gate electrode and arranged on top of a semiconductor body, and a gate pad arranged on top of the semiconductor body and electrically connected to the gate runner. The gate runner includes a first metal line, a second metal line on top of the first metal line, a first gate runner section, and at least one second gate runner section. The at least one second gate runner section is arranged between the first gate runner section and the gate pad. A cross sectional area of the second metal line in the at least one second gate runner section is less than 50% of the cross sectional area of the second metal line in the first gate runner section.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: October 20, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: David Laforet, Oliver Blank, Cesar Augusto Braz, Gerhard Noebauer, Cedric Ouvrard
  • Publication number: 20200328303
    Abstract: A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
    Type: Application
    Filed: June 25, 2020
    Publication date: October 15, 2020
    Inventors: Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet, Harsh Naik, Ralf Siemieniec, Li Juin Yip
  • Patent number: 10727331
    Abstract: A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: July 28, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, David Laforet, Harsh Naik, Ralf Siemieniec, Li Juin Yip
  • Patent number: 10636883
    Abstract: A method of forming a semiconductor device includes forming a source trench extending into a semiconductor body from a first surface of the semiconductor body, forming a source trench dielectric and a source trench electrode in the source trench, forming a gate trench dielectric and a gate trench electrode in a gate trench extending into the semiconductor body from the first surface, forming a body region of a first conductivity type between the gate and source trenches, forming a source region of a second conductivity type different from the first conductivity type between the gate and source trenches, forming an interconnection electrically coupling the body region and the source trench electrode, wherein the interconnection adjoins a lateral face of the source trench electrode of the body region, and forming a source contact on the source trench electrode at the first surface.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: April 28, 2020
    Assignee: Infineon Technologies Austria AG
    Inventor: Oliver Blank
  • Publication number: 20200127134
    Abstract: A semiconductor device includes: a gate trench extending into a Si substrate; a body region in the Si substrate, the body region including a vertical channel region adjacent a sidewall of the gate trench; a source region in the Si substrate above the body region; a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and by a portion of the body region; an electrically conductive material in the contact trench; and a diffusion barrier structure interposed between a sidewall of the contact trench and the vertical channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si and configured to increase carrier mobility within the vertical channel region. Corresponding methods of manufacture are also described.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Publication number: 20200127102
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The first field plate structures form a first portion of a regular pattern and the second field plate structures form a second portion of the same regular pattern.
    Type: Application
    Filed: November 22, 2019
    Publication date: April 23, 2020
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard, Li Juin Yip
  • Patent number: 10580888
    Abstract: A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate, the body region including a channel region which extends along a sidewall of the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and a portion of the body region, the contact trench being filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, and a diffusion barrier structure formed along the sidewall of the contact trench and disposed between the highly doped body contact region and the channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: March 3, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Publication number: 20200052109
    Abstract: A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate, the body region including a channel region which extends along a sidewall of the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and a portion of the body region, the contact trench being filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, and a diffusion barrier structure formed along the sidewall of the contact trench and disposed between the highly doped body contact region and the channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si.
    Type: Application
    Filed: August 8, 2018
    Publication date: February 13, 2020
    Inventors: Oliver Blank, Thomas Feil, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant, Bernhard Goller, Andreas Meiser
  • Publication number: 20200052077
    Abstract: A power semiconductor die has a semiconductor body coupled to first and second load terminals, and at least one power cell. In a horizontal cross-section of the at least one power cell, a contact has a contact region which horizontally overlaps with a field plate electrode and horizontally protrudes from the field plate trench, and a recess region does not horizontally overlap with the contact region and extends into a horizontal circumference of the field plate trench.
    Type: Application
    Filed: August 9, 2019
    Publication date: February 13, 2020
    Inventors: Christof Altstaetter, Marcel Rene Mueller, Oliver Blank, David Laforet
  • Patent number: 10510846
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. The inner termination region surrounds the transistor cell region and includes needle-shaped second field plate structures extending from the first surface into the semiconductor substrate. The first field plate structures form a first portion of a regular pattern and the second field plate structures form a second portion of the same regular pattern.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: December 17, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, David Laforet, Cedric Ouvrard, Li Juin Yip