Abstract: Embodiments of the invention generally provide an apparatus and technique for sharing an internally generated voltage between devices of a multi-chip package (MCP). The internally generated voltage may be shared via a conductive structure that electrically couples the devices and carries the internally generated voltage.

Abstract: A refresh scheduler is configured to refresh memory cells of a memory device according to a plurality of refresh intervals. The various refresh intervals are determined in response to refresh errors.

Abstract: A memory includes a first macro chip, a spine chip, and a common substrate. The common substrate is configured to pass signals between the first macro chip and the spine chip. The first macro chip, the spine chip, and the common substrate provide a memory.

Abstract: A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.

Abstract: System and method for reducing power consumption and noise in a transmission system with an asymmetrically terminated transmission line. A preferred embodiment comprises encoding data words to reduce the number of times a given state appears in a code word. The preferred embodiment comprises counting the number of times a given state appears in a data word. If the count is greater than half of the total number of bits in the data word, then the data word is inverted and a weight bit can be set to the given state. If the count is less than (or equal to) half of the total number of bits, then the data word may be unchanged and the weight bit can be set to the inverse of the given state. The code word can be generated by appending the weight bit to the data word.

Abstract: A random access memory including a first amplifier, a second amplifier, a first data path, a second data path, and a first circuit. The first data path receives first data via first memory cells and the second data path receives second data via second memory cells. The first circuit is configured to receive the first data via the first data path and the second data via the second data path. The first circuit is configured to selectively provide the first data to the first amplifier and the second amplifier and the second data to the first amplifier and the second amplifier.

Abstract: An electrical system including a signal line and a driver. The signal line is terminated via a passive component. The driver is configured to receive an input signal and provide an output signal via the signal line. The driver is configured to provide an output logic level in the output signal at a first drive strength and to switch and provide the output logic level in the output signal at a second drive strength. The first drive strength is greater than the second drive strength.

Abstract: An electronic subsystem assembly including a subsystem circuit, a contact interface, a memory circuit, and a radio frequency interface. The subsystem circuit is configured to provide a system function. The contact interface is configured to receive input signals and output signals. The memory circuit is configured to receive the input signals via the contact interface and to transmit the output signals via the contact interface. The radio frequency interface is configured to receive data signals from the memory circuit and to provide a radio frequency transmission that includes the data signals.

Abstract: A memory device includes a pair of complementary bitlines including a first bitline and a second bitline. A bitline precharge block is coupled between the first bitline and the second bitline. A sense amplifier is coupled to both the first bitline and the second bitline and a sense amplifier precharge block is coupled to the sense amplifier. The sense amplifier precharge block can be activated independently from the bitline precharge block. An isolation block is coupled between the pair of complementary bitlines and the bitline precharge block on one side and the sense amplifier and sense amplifier precharge block on another side.

Abstract: A test mode for component-specific testing of a memory module. Data is written to and stored in each memory component of a memory module, which data indicates whether the memory component is to execute a particular test mode. Upon receiving a test mode command supplied in common to all of the memory components on the memory module, each memory component examines the data to determine whether it is to execute a test mode command supplied contemporaneously therewith or subsequently supplied test mode commands.

Abstract: A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.

Abstract: Method for controlling the burst length of a data transmission. A preferred embodiment comprises initiating a fixed burst length transmission and issuing a burst terminate command specifying a desired length of the burst data transfer, wherein the burst terminate command is issued prior to the completion of the fixed burst length data transfer. The burst terminate command specifies an address of a final data to be transferred by the fixed burst length transmission.

Abstract: A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer.

Abstract: An integrated circuit has connecting pads for outputting digital signals, a connection for a time reference signal, and an assessment circuit to measure and assess a phase shift between one of the digital signals and the time reference signal. A receiver circuit is connected to a respective junction between one of the connecting pads and an associated output driver. A device for matching propagation times of signals applied to the receiver circuit is provided. The assessment circuit is connected to the receiver circuit and has an output to output a measured result. In each case, the phase shift of the signals to be output in relation to the time reference signal is measured and assessed separately. An offset of the switching edges of the signals to be output can be determined relatively accurately and corrected.

Abstract: An integrated circuit includes at least one main circuit 313 operable to perform one or more functions. At least one termination node DQ receives or transmits an operating signal. An active termination circuit 301 has first and second transistors of opposite type coupled in series between a Vdd node of a first source potential and a Vss node of a second source potential. The at least one termination node is coupled to a common node between the first and second transistors. A control circuit operates to bias the first and second transistors such that they exhibit a controlled impedance at the common node. Alternatively, the control circuit operates to bias the first and second transistors such that they provide a clamping function at the common node.

Abstract: System and method for detecting a reference signal. A preferred embodiment comprises a latch (such as the latch 320) and a filter (such as the filter 325). The latch tracks a reference signal at its input and reflects the reference signal at its output. The filter can be coupled to the output of the latch and may inject a delay to help eliminate the effects of glitches and noise. When the reference signal reaches a specified value, a control signal from the filter causes the latch to store the reference signal. A delay imparted by the filter ensures that the latch does not store the reference signal until a finite amount of time after the reference signal reaches the specified value.

Abstract: An integrated circuit, comprising: at least one main circuit operable to perform one or more functions, and including at least one I/O node for receiving or transmitting an operating signal; an active termination circuit having first and second MOSFETs of the same type coupled in series across a Vdd node of a first source potential and a Vss node of a second source potential, the at least one I/O node being coupled to a common node between the first and second MOSFETs; and a control circuit operable to bias the first and second MOSFETs such that they exhibit a controlled impedance at the common node.

Abstract: An N-bit word is produced from an M-bit code received on an M-bit line, M being larger than N, the M-bit code comprising at least an M-bit code word and a previous M-bit code word, the M-bit code word comprising different levels at at least two bit positions, and the previous M-bit code word comprising levels opposite to the different levels at the corresponding bit positions, by comparing the levels at the two bit positions of the M-bit code word to obtain a first value, comparing the levels at the two corresponding bit positions of the previous M-bit code word to obtain a second value, detecting that the first value is opposite to the second value, and decoding the M-bit code word responsive to detecting that the first value is opposite to the second value. An advantage of the present invention is that all the lines taking part in the transmission have the same electrical characteristics, the same meaning and the same kind of loads.

Abstract: A circuit element has an input for receiving an external clock with a clock period duration. A unit is provided to present the circuit element with information representing the clock period duration of the external clock. In addition the circuit element includes a unit for the temporal control of a signal in the circuit element on the basis of information representing the clock period duration.

Abstract: An integrated circuit includes at least one main circuit 313 operable to perform one or more functions. At least one termination node DQ receives or transmits an operating signal. An active termination circuit 301 has first and second transistors of opposite type coupled in series between a Vdd node of a first source potential and a Vss node of a second source potential. The at least one termination node is coupled to a common node between the first and second transistors. A control circuit operates to bias the first and second transistors such that they exhibit a controlled impedance at the common node. Alternatively, the control circuit operates to bias the first and second transistors such that they provide a clamping function at the common node.