Abstract: An information processing device includes a control unit configured to determine whether to include a regenerative brake in specifications of a proposed vehicle based on regenerative brake operation data acquired while a first vehicle including the regenerative brake is traveling in a predetermined area. The proposed vehicle is a vehicle proposed as a vehicle for a customer to drive in the predetermined area.

Abstract: A pipe fixing device includes: first and second clamps that fix a pipe; and first and second engaging parts that are fixed to the pipe and engage respectively with the first and second clamps. The first clamp and the first engaging part configured to engage with each other such that the first engaging part is restrained from moving toward one side in an axial direction of the pipe and from moving in a circumferential direction of the pipe relative to the first clamp. The second clamp and the second engaging part configured to engage with each other such that the second engaging part is restrained from moving toward another side in the axial direction of the pipe and from moving in the circumferential direction of the pipe relative to the second clamp.

Abstract: A semiconductor memory device includes a conductive layer; a plurality of electrode layers stacked on the conductive layer; a semiconductor pillar extending through the electrode layers in a stacking direction and electrically connected to the conductive layer; and an insulating layer positioned between the semiconductor pillar and the electrode layers and extending along the semiconductor pillar. The semiconductor pillar has a channel portion extending through the electrode layers and a high impurity concentration portion positioned at a bottom end on a side of the conductive layer. The high impurity concentration portion includes an impurity of a higher concentration than an impurity concentration in the channel portion. The insulating layer has an end portion extending toward a center of the bottom end of the semiconductor pillar, and a boundary of the channel portion and the high impurity concentration portion is positioned above the end portion of the insulating layer.

Abstract: A semiconductor memory device includes a conductive layer; a plurality of electrode layers stacked on the conductive layer; a semiconductor pillar extending through the electrode layers in a stacking direction and electrically connected to the conductive layer; and an insulating layer positioned between the semiconductor pillar and the electrode layers and extending along the semiconductor pillar. The semiconductor pillar has a channel portion extending through the electrode layers and a high impurity concentration portion positioned at a bottom end on a side of the conductive layer. The high impurity concentration portion includes an impurity of a higher concentration than an impurity concentration in the channel portion. The insulating layer has an end portion extending toward a center of the bottom end of the semiconductor pillar, and a boundary of the channel portion and the high impurity concentration portion is positioned above the end portion of the insulating layer.

Abstract: A pipe fixing device includes: first and second clamps that fix a pipe; and first and second engaging parts that are fixed to the pipe and engage respectively with the first and second clamps. The first clamp and the first engaging part configured to engage with each other such that the first engaging part is restrained from moving toward one side in an axial direction of the pipe and from moving in a circumferential direction of the pipe relative to the first clamp. The second clamp and the second engaging part configured to engage with each other such that the second engaging part is restrained from moving toward another side in the axial direction of the pipe and from moving in the circumferential direction of the pipe relative to the second clamp.

Abstract: According to one embodiment, an image sensor includes an image-sensing element region formed by arranging a plurality of image-sensing elements on a semiconductor substrate, and a logic circuit region formed in a region different from the image-sensing element region on the substrate and including a plurality of gate patterns. Further, dummy gate patterns are formed with a constant pitch on the image-sensing element region.

Abstract: According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.

Abstract: According to one embodiment, an image sensor includes an image-sensing element region formed by arranging a plurality of image-sensing elements on a semiconductor substrate and element isolation portions formed to isolate the image-sensing elements, and a logic circuit region formed in a region different from the image-sensing element region on the substrate and including a plurality of gate patterns. Further, dummy element isolation portions are arranged with a constant pitch in the boundary region between the image-sensing element region and the logic circuit region.

Abstract: According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.

Abstract: According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.

Abstract: According to one embodiment, an image sensor includes an image-sensing element region formed by arranging a plurality of image-sensing elements on a semiconductor substrate, and a logic circuit region formed in a region different from the image-sensing element region on the substrate and including a plurality of gate patterns. Further, dummy gate patterns are formed with a constant pitch on the image-sensing element region.

Abstract: Sound reproduction is controlled so as to be heard in the optimal state for the hearing function specific to elderly people. A frequency characteristic setting portion for setting the frequency characteristics of an inputted sound signal, and a sound volume setting portion for variable controlling the volume is disclosed. The frequency characteristic setting portion changes a frequency characteristic in which a sound band including a human voice band is emphasized to a frequency characteristic in which the characteristics of a gain in accordance with a frequency gradually becomes flat with an increase in the volume set by the sound volume setting portion.

Abstract: According to one embodiment, an image sensor includes an image-sensing element region formed by arranging a plurality of image-sensing elements on a semiconductor substrate, and a logic circuit region formed in a region different from the image-sensing element region on the substrate and including a plurality of gate patterns. Further, dummy gate patterns are formed with a constant pitch on the image-sensing element region.

Abstract: The present invention provides a glass fiber-reinforced thermoplastic resin composition in which a particular relationship is satisfied between the glass fiber content (W (parts by weight)) and the melt viscosity (?) of the thermoplastic resin composition at molding temperature as determined at a shear rate of 1,000 sec?1. According to the present invention, there can be obtained a glass fiber-reinforced thermoplastic resin having increased strength and rigidity and excellent in practical characteristics such as impact resistance and antifreeze liquid resistance. In addition, molded articles obtained by injection-molding the composition are available as components having reduced anisotropies of mechanical characteristics and mold shrinkage factor.

Abstract: A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.

Abstract: According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.

Abstract: A television receiver for content with which genre information is associated includes: a basic picture quality information receiving section which associates, with a single piece of genre information, a plurality of candidates for picture quality information regarding the content with which the genre information is associated, and which receives basic picture quality information indicating which one of the plurality of candidates is based on; a picture quality correction information creating section which receives picture quality correction information for further correcting the picture quality, and which creates, in accordance with the basic picture quality information and the picture quality correction information, information for correcting the picture quality; and a picture processing section which corrects the picture quality and which creates a picture to be displayed by a liquid crystal display device.

Abstract: Disclosed herein is an electrolytic erosion preventing insulated rolling bearing and a manufacturing method thereof. In one embodiment, the electrolytic erosion preventing insulated rolling bearing includes an insulating coating being a ceramic coating layer including alumina as the main component and 0.01 to 0.2 percent by weight titanium oxide with the alumina having a particle size ranging from 10 to 50 ?m and average particle size ranging from 15 to 25 ?m.

Abstract: A semiconductor device according to one embodiment includes an element isolation insulating film formed on a substrate, an element region and a dummy pattern region demarcated by the element isolation insulating film on the substrate, a first epitaxial crystal layer formed on the substrate within the element region, and a second epitaxial crystal layer formed on the substrate within the dummy pattern region. The first epitaxial crystal layer is made up of crystals that have a different lattice constant from that of the crystals that constitute the substrate. The second epitaxial crystal layer is made up of the same crystals as the first epitaxial crystal layer. The (111) plane of the substrate that includes any points on the interface between the second epitaxial crystal layer and the substrate is surrounded by the element isolation insulating film in a deeper region than the second epitaxial crystal layer.

Abstract: The contact portion of the end face of a conical roller, which is a portion to be slidingly contacted with a collar portion, is ground such that the outer contour line of the section thereof has a continuously curved line which passes through at least not only the first point but also between the third position and fourth position.