Abstract: A resin composition including 30 to 90% by mass of polyamide (A), 70 to 10% by mass of glass fibers (B), a copper compound (C) and a halogenated compound (D), wherein polyamide (A) has a sum of a terminal carboxyl group concentration and a terminal amino group concentration of 100 milliequivalents/kg or more and 200 milliequivalents/kg or less, the terminal carboxyl group concentration being higher than the terminal amino group concentration; glass fibers (B) have a fiber diameter of 10 to 20 ?m and a weight average fiber length of 5 to 30 mm; the content of copper based on polyamide (A) is 30 ppm or more and 200 ppm or less; and the molar ratio of halogen to copper (halogen/copper) is more than 5 and not more than 25.

Abstract: A television receiver for content with which genre information is associated includes: a basic picture quality information receiving section which associates, with a single piece of genre information, a plurality of candidates for picture quality information regarding the content with which the genre information is associated, and which receives basic picture quality information indicating which one of the plurality of candidates is based on; a picture quality correction information creating section which receives picture quality correction information for further correcting the picture quality, and which creates, in accordance with the basic picture quality information and the picture quality correction information, information for correcting the picture quality; and a picture processing section which corrects the picture quality and which creates a picture to be displayed by a liquid crystal display device.

Abstract: A television receiver includes a genre identification section that identifies a genre of contents, a video processing section that displays the contents upon correcting the contents with an image quality parameter set in accordance with the identified genre in advance, a display control section that displays, while the contents is displayed, an adjustment item for adjusting a value of the image quality parameter, a parameter value adjustment section that adjusts the value of the image quality parameter based on entry by a user, and a parameter value changing section that changes the value of the image quality parameter, when the identified genre changes to another genre, to a value set in advance corresponding to a genre after the genre changes, and the parameter value changing section changes the value of the image quality parameter in a different period of time depending on whether or not the adjustment item is displayed.

Abstract: Sound reproduction is controlled so as to be heard in the optimal state for the hearing function specific to elderly people. A frequency characteristic setting portion for setting the frequency characteristics of an inputted sound signal, and a sound volume setting portion for variable controlling the volume is disclosed. The frequency characteristic setting portion changes a frequency characteristic in which a sound band including a human voice band is emphasized to a frequency characteristic in which the characteristics of a gain in accordance with a frequency gradually becomes flat with an increase in the volume set by the sound volume setting portion.

Abstract: A semiconductor device according to one embodiment includes an element isolation insulating film formed on a substrate, an element region and a dummy pattern region demarcated by the element isolation insulating film on the substrate, a first epitaxial crystal layer formed on the substrate within the element region, and a second epitaxial crystal layer formed on the substrate within the dummy pattern region. The first epitaxial crystal layer is made up of crystals that have a different lattice constant from that of the crystals that constitute the substrate. The second epitaxial crystal layer is made up of the same crystals as the first epitaxial crystal layer. The (111) plane of the substrate that includes any points on the interface between the second epitaxial crystal layer and the substrate is surrounded by the element isolation insulating film in a deeper region than the second epitaxial crystal layer.

Abstract: A transmitting/receiving method that can easily detect an influence exerted in transmission channels at a transmitter/receiver is provided. An acquiring unit 12 acquires left audio data and right audio data of audio data received by a metadata calculator 1. An adding unit 141 then calculates added data based on an added value for a predetermined time of a sum of the acquired left audio data and right audio data. Similarly, a subtracting unit 142 calculates subtracted data based on an added value for predetermined time of a difference between the acquired right audio data and left audio data. An addition unit 17 adds the added data and the subtracted data calculated by these adding unit 141 and subtracting unit 142 to the received audio data, and a transmission unit 18 transmits the audio data to which the added data and the subtracted data are added.

Abstract: Provided is a signal processing method which can enhance the resolution of a spectrum round off by quantization and compensate energy of a spectrum truncated to zero by quantization so as to achieve reproduction without dissatisfaction or uncomfortable feeling. The selecting circuit selects a plurality of coefficients from coefficients of a frequency band of a dequantized acoustic signal. The computing circuit then computes an interpolation coefficient of a coefficient, which is not selected by the selecting circuit, by an interpolation method such as a Lagrange's interpolation method or a spline interpolation method which uses the plurality of coefficients selected by the selecting circuit.

Abstract: A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.

Abstract: A liquid crystal orientation layer contains at least one polymer selected from polyamic acids and polyimides and at least one epoxy compound having a chemical structure represented by the following formula (1) or (2), the X moieties in the formulae containing an alicyclic epoxy group or a glycidyl group represented by the following formula (a) or (b): with the substituents as defined herein the specification.

Abstract: In order to ensure high levels of insulation performance, and low cost, and have an excellent external appearance, as a ceramic constituting an insulating coating 6 being a ceramic coating layer, one with alumina as its main component, and in which the content of titanium oxide is limited to 0.01 to 0.2 percent by weight is used. Moreover, a particle size of ceramic forming the coating layer is 10 to 50 ?m, and average particle size is 15 to 25 ?m. By limiting the content of titanium oxide, the insulating coating 6 can be made thin, and by limiting the particle size the film thickness accuracy can be improved, thus simplifying finishing. Moreover, by mixing of titanium oxide, deterioration of the external appearance after sealing can be prevented. As a result, the above problem is solved.

Abstract: A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.

Abstract: The present invention provides a glass fiber-reinforced thermoplastic resin composition in which a particular relationship is satisfied between the glass fiber content (W (parts by weight)) and the melt viscosity (?) of the thermoplastic resin composition at molding temperature as determined at a shear rate of 1,000 sec?1. According to the present invention, there can be obtained a glass fiber-reinforced thermoplastic resin having increased strength and rigidity and excellent in practical characteristics such as impact resistance and antifreeze liquid resistance. In addition, molded articles obtained by injection-molding the composition are available as components having reduced anisotropies of mechanical characteristics and mold shrinkage factor.

Abstract: A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.

Abstract: A semiconductor device includes: a semiconductor substrate; a p-channel field effect transistor formed in a first region of the semiconductor substrate; an n-channel field effect transistor formed in a second region of the semiconductor substrate; a compressive stress film with a compressive stress generated inside, the compressive stress film covering the first region; a tensile stress film with a tensile stress generated inside, the tensile stress film covering the second region; and a buffer film located between the p-channel field effect transistor and the n-channel field effect transistor on the semiconductor substrate, the magnitude of internal stress of the buffer film being smaller than the magnitude of the compressive stress of the compressive stress film and the magnitude of the tensile stress of the tensile stress film.

Abstract: A resin composition including 30 to 90% by mass of polyamide (A), 70 to 10% by mass of glass fibers (B), a copper compound (C) and a halogenated compound (D), wherein polyamide (A) has a sum of a terminal carboxyl group concentration and a terminal amino group concentration of 100 milliequivalents/kg or more and 200 milliequivalents/kg or less, the terminal carboxyl group concentration being higher than the terminal amino group concentration; glass fibers (B) have a fiber diameter of 10 to 20 ?m and a weight average fiber length of 5 to 30 mm; the content of copper based on polyamide (A) is 30 ppm or more and 200 ppm or less; and the molar ratio of halogen to copper (halogen/copper) is more than 5 and not more than 25.

Abstract: A semiconductor device includes: a semiconductor substrate; an N-type MOSFET formed in a surface of the semiconductor substrate; a tensile stress film provided on the semiconductor substrate at least around a directly overlying region of a channel region of the N-type MOSFET and having tensile stress therein; and a compressive stress film provided in the directly overlying region of the channel region and having compressive stress therein.

Abstract: A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.

Abstract: A transmitting/receiving method that can easily detect an influence exerted in transmission channels at a transmitter/receiver is provided. An acquiring unit 12 acquires left audio data and right audio data of audio data received by a metadata calculator 1. An adding unit 141 then calculates added data based on an added value for a predetermined time of a sum of the acquired left audio data and right audio data. Similarly, a subtracting unit 142 calculates subtracted data based on an added value for predetermined time of a difference between the acquired right audio data and left audio data. An addition unit 17 adds the added data and the subtracted data calculated by these adding unit 141 and subtracting unit 142 to the received audio data, and a transmission unit 18 transmits the audio data to which the added data and the subtracted data are added.

Abstract: Provided is a signal processing method which can enhance the resolution of a spectrum round off by quantization and compensate energy of a spectrum truncated to zero by quantization so as to achieve reproduction without dissatisfaction or uncomfortable feeling. The selecting circuit selects a plurality of coefficients from coefficients of a frequency band of a dequantized acoustic signal. The computing circuit then computes an interpolation coefficient of a coefficient, which is not selected by the selecting circuit, by an interpolation method such as a Lagrange's interpolation method or a spline interpolation method which uses the plurality of coefficients selected by the selecting circuit.

Abstract: A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.