Abstract: A method of manufacturing a semiconductor laser having an end surface window structure includes the steps of forming a groove near at least the formation position of the end surface window structure of a substrate, and growing a nitride-based group III-V compound semiconductor layer including an active layer formed of a nitride-based group III-V compound semiconductor including at least In and Ga on the substrate.

Abstract: A copolymer having a block (A?) composed of a repeating unit represented by the formula (I-1), and/or a block (A) containing a repeating unit represented by the formula (I-1) and a repeating unit represented by the formula (II). (wherein X1, X2 and X3 may be the same or mutually different and represent an oxygen atom, a sulfur atom or C(R7)?C(R8)—, and R1, R2, R2, R4, R5, R6, R7 and R8 may be the same or mutually different and represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, an arylalkynyl group, a mono-valent heterocyclic group, a heterocyclic thio group, an amino group, a silyl group, an acyl group, an acyloxy group, an imine residue, an amide group, an acid imide group, a carboxyl group, a cyano group or a nitro group, and m and n may be the same or mutually different and represent 2 or 3.

Abstract: Disclosed is a composition containing a metal complex and an organic compound, wherein the difference between the absolute value of the energy level of the lowest unoccupied molecular orbit of said metal complex and the absolute value of the lowest unoccupied molecular orbit of said organic compound, as calculated with a computational technique, is less than 0.40 eV.

Abstract: A polymer compound comprising a repeating unit represented by the formula (I): [wherein X1 represents an oxygen atom, a sulfur atom or N(RN)—, R1 to R4 and RN represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, an arylalkynyl group, a mono-valent heterocyclic group or the like.].

Abstract: A de-boning method and apparatus for automating incision making to the meat of bone laden meat and scraping operation of meat from the bone laden meat by a meat separator, are proposed. The apparatus has a clamping device 1 for clamping an end part ‘d’ of unconcealed part of the bone of bone laden meat, a meat separator 31 having meat scraping plates 317a, 317b for pinching a bone of the bone laden meat, a cutter 33 located between the clamping device 1 and the meat separator 31, a clamping device lifting means 30, and rotation drive means 303 and 313 for rotating for rotating the clamping device 1 and the meat separator 31 in synchronism with each other, whereby spiral incision is made to a part of the meat of the bone laden meat by rotating the clamping device 1, and remaining part of the meat is scraped off as the clamping device is lifted while rotating in synchronism with the meat scraper.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A polymer compound comprising a repeating unit of the following formula (1) and which is useful as a light emitting material or charge transporting material and excellent in heat resistance, fluorescent intensity and the like: (wherein, ring A and ring B represent each independently an aromatic hydrocarbon ring optionally having a substituent, at least one of ring A and ring B is an aromatic hydrocarbon ring composed of a plurality of condensed benzene rings, Rw and Rx represent each independently a hydrogen atom, alkyl group, alkoxy group or the like, and Rw and Rx may mutually bond to form a ring).

Abstract: A GaN-based III-V group compound semiconductor light-emitting element having high light-emitting efficiency and high reliability at a light-emitting wavelength of 440 nm or more is provided. A GaN-based semiconductor laser element 10 has a laminated structure of: a stripe-shaped convex portion 18 made of a surface layer of a sapphire substrate 12, a buffer layer 14 and a first GaN layer 16, and on the sapphire substrate, a second GaN layer 20, an n-side cladding layer 22, an n-side guide layer 24, an active layer 26, a deterioration prevention layer 28, a p-side guide layer 30, a p-side cladding layer 32 and a p-side contact layer 34. The active layer is formed of a quantum well structure including a GaInN barrier layer 36 and a GaInN well layer 38, and a planar crystal defect prevention layer 40 made of an AlGaN layer is provided on the upper surface or lower surface, or between both the surfaces of the barrier layer and the well layer.

Abstract: An information delivery apparatus includes an encoder for encoding and packetizing digital data of an image or an audio, a frame assembly identification packet insertion unit for inserting a frame assembly identification packet including time information in the data packetized by the encoder on a frame assembly basis, and a transmission side communication module for outputting to a network the stream data having the frame assembly identification packet inserted therein by the frame assembly identification insertion unit.

Abstract: Thermal transfer printing method and apparatus are provided to make initial character image data left on a spent ink ribbon illegible. In the method, after forming an initial character image FGi1 on an ink layer 11b in black of the ink ribbon 11, a forefront position S1 of the ink layer 11b is aligned with a forefront position S2 of an intermediate transfer film 25. Then, overwrite character image data UGD1 is applied on a thermal head 19 to produce a first superimpose character image KG1i1 on the ribbon 11 and a first superimpose character image KG1m1 on the film 25. After that, the forefront position S1 of the ink layer 11b is shifted from the forefront position S2 of the film 25 by a predetermined distance and further, the overwrite character image data UGD1 is applied on the thermal head 19 to produce a second superimpose character image KG2i1 on the ribbon 11 and a second superimpose character image KG2m1 on the film 25.

Abstract: Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 ?m.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: There is provided an image processing apparatus having an image segmentation unit that divides image formation into image areas in a first direction, a random number memory that stores random numbers, a reference position determination unit that determines a reference position so as to vary in a second direction perpendicular to the first direction, a pixel determination unit that determines a pixel as a target to be subjected to correction processing of pixel insertion into or pixel reduction from each of the image areas, for the each of the image areas, according to the stored random numbers and the determined reference position, among pixels in the each of the image areas, and an image width change unit that performs the correction processing on the determined pixel to change an image width of the image information in the first direction.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: Video/audio data is stored in an HDD (115) and information concerning to the video/audio data is also generated and stored with the video/audio data. A comparison unit (112) compares the video/audio data with feature data stored in a selector unit (111) and detects a position where the feature data is contained. When the feature data is detected, a tag information generation unit (113) generates tag information and stores the tag information after adding thereto the video/audio data.

Abstract: A stream encoder includes a video encoder for receiving and encoding first and second angle video data, and outputting the results as first and second encoded video data, a first video buffer for storing the first encoded video data, and a second video buffer for storing the second encoded video data. The video encoder includes a motion compensation prediction encoder which can encode two or more frames per frame cycle of the first or second angle video data.

Abstract: Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions.

Abstract: The stream control device includes: (a) a series of units from an AV output device to a de-multiplexing unit, which decodes a stream and outputs the decoded data; (b) a parameter list storage unit in which a parameter list is stored, the parameter list including basic list structures connected in series, each of which has parameter information characterizing the respective processing performed by the units from the AV output device to the de-multiplexing unit; (c) a device driver execution unit which executes, based on the parameter list, a device driver which controls the respective processing performed by the units from the AV output device to the de-multiplexing unit; and (d) an application program execution unit which executes an application program which provides the device driver execution unit with a first address of the parameter list as an argument. Thereby, it is possible to reduce processing for designing different software interfaces for the respective device drivers.

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Abstract: An image forming apparatus has: a recording head having plural unit recording heads divided in a direction orthogonal to a moving direction of a recording medium; a detecting section detecting at least offset of an image recorded by a vicinity of an end portion, in the direction orthogonal to the moving direction of the recording medium, of the plural unit recording heads; and a correcting section correcting recording offset of the recording head on the basis of results of detection of the detecting section.