Abstract: A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1−HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 &mgr;m.

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

Abstract: The present invention provides a gallium nitride semiconductor device including an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer. The gallium nitride semiconductor device is characterized in that recessed portions are present dispersely over the whole surface area of the underlying compound semiconductor layer in contact with the electrode metallic film in such a manner that at least two recessed portions having a depth greater than the lattice constant of crystals constituting the underlying compound semiconductor layer are present on a width direction line in any 1 &mgr;m width region of the whole surface area.

Abstract: A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Abstract: A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage.

Abstract: A Zn—Al—Mg—Si alloy-plated steel material with excellent corrosion resistance, characterized by comprising, in terms of wt %, Al: at least 45% and no greater than 70%, Mg: at least 3% and less than 10%, Si: at least 3% and less than 10%, with the remainder Zn and unavoidable impurities, wherein the Al/Zn ratio is 0.89-2.75 and the plating layer contains a bulky Mg2Si phase; also, a Zn—Al—Mg—Si alloy-plated steel material with excellent corrosion resistance, characterized by comprising, in terms of wt %, Al: at least 45% and no greater than 70%, Mg: at least 1% and less than 5%, Si: at least 0.5% and less than 3%, with the remainder Zn and unavoidable impurities, wherein the Al/Zn ratio is 0.89-2.75 and the plating layer contains a scaly Mg2Si phase.

Abstract: An image data generation part 400 generates image data, attaches a tag to the image data, and then outputs the resultant data. A screen processing part 420 carries out a screen process on the image data in accordance with the characteristic indicated by the tag, and outputs the tag to a parameter generation part 428. The parameter generation part 428 adjusts a parameter of a correction process in an image processing part 424 so that a detected misregistration does not interfere with the screen characteristic. The image processing part 424 applies such a correction process as to cancel a detected misregistration in an output image to input image data in accordance with the parameter of the correction process as input. A print processing part 440 controls an apparatus main body 2 to cause it to print corrected image data.

Abstract: When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x≦0.011 and x≧450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H≦70×10−4 (cm), and Z=y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos−1(1-HCZ), where C (cm−1) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;=CZ.

Abstract: Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions.

Abstract: A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less.

Abstract: A resin-coated Al—Zn alloy coated steel sheet is excellent in formability, resistance to chromium dissolution, corrosion resistance, alkali resistance, and paintability, and produced by the following method. That is, a silane coupling agent having amino group, chromium ion and at least one alcohol selected from the group consisting of trihydric alcohol and dihydric alcohol having the number of carbon of 2 to 3 are compounded into an acrylic polymer resin emulsion including carboxyl group and glycidyl group, and having an acid value of 10 to 60. A pH of the resultant mixture is adjusted within a range of 7 to 9 to obtain a chromate containing resin composition. The chromate containing resin composition is applied on an Al—Zn alloy coated steel sheet as a substrate, and then dried to obtain a resin film on the substrate. A compounding amount of the silane coupling agent is within a range of 0.5 to 3.0 wt % with respect to a resin solid component of the acrylic polymer resin emulsion.

Abstract: A group-IV semiconductor substrate has an inclined front surface, the inclination being toward a direction differing from the <010>crystal lattice direction. The substrate is cleansed by heating in the presence of a gas including a compound of the group-IV substrate element. A source gas of a group-III element is then supplied, forming an atomic film of the group-III element on the substrate surface. Starting at the same time, or shortly afterward, a source gas of a group-V element is supplied, and a III-V compound semiconductor hetero-epitaxial layer is grown. Chemical bonding of the group-III element to the group-IV substrate surface produces a crystal alignment of the hetero-epitaxial layer that leads to improved conversion efficiency when the semiconductor substrate is used in the fabrication of solar cells with compound semiconductor base and emitter layers.

Abstract: To provide a semiconductor device capable of enhancing crystallinity of a semiconductor of a III-V group compound of a nitride system formed on a sapphire substrate and to provide a method of manufacturing the same.

Abstract: The present invention relates to a heat dissipation unit for cross flow type cooling tower with which it is possible to prevent the emission of white vapor without lowering the cooling power of the cooling tower, and also without requiring troublesome routine operation. In order to accomplish the above object, the heat dissipation unit of the present invention comprises filling plates arranged vertically and parallel with each other so as to form spaces therebetween, each of the filling plates having uneven surfaces down which water to be cooled flows when water to be cooled is supplied onto the filling plates, and cowl members disposed between neighboring filling plates, each of the cowl members including a pair of side plate portions having upper ends and a roof portion connecting the upper ends of the side plate portions.

Abstract: Hot water is sprayed to fillers arranged immediately under a hot water vessel through spray ports opened on a lower surface of the hot water vessel. The hot water flowing down along the fillers is cooled through direct contact with ambient air. The cooling tower includes fillers partitioned alternately into permanent wet and wet-dry changeover regions which are mutually isolated for flow passages of the ambient air and spray pipes provided on the lower surface of the hot water vessel exclusively for the wet-dry changeover regions such that the hot water can be sprayed to the wet-dry changeover regions separately from the permanent wet regions. The hot water vessel is supported by the spray pipes. The spray ports of the hot water vessel is communicated only with the permanent wet regions.

Abstract: The present invention relates to a cross flow type cooling tower with which it is possible to prevent the emission of white vapor in cold weather with certainty. In order to accomplish the above object, the cooling tower of the present invention comprises: a heat dissipation unit having filling plates arranged vertically and parallel with each other so as to form dry air passages and moist air passages therebetween, each of the dry air passages and the moist air passages having inner surfaces; water supply means for supplying water to be cooled to the inner surfaces of the moist air passages for cooling the water by contact with air passing through the moist air passage; and water invasion stoppers provided at side ends of the filling plates for preventing the water flowing down the inner surfaces of the moist air passages from invading the dry air passages.

Abstract: The present invention relates to a cross flow type cooling tower with which it is possible to prevent emission of white vapor in cold weather. In order to accomplish the above object, the cooling tower of the present invention is constructed of heat exchange units each of which having plates arranged vertically and parallel from each other so as to form passages therebetween, which are separated into wet air passages and switchable air passages capable of switching from dry air passages and wet air passages; a water bath divided into upper and lower baths by a partition plate with holes, the upper bath is provided with spray nozzles for spraying water into the switchable passages, the lower bath provided with spray nozzles for spraying water into the wet passages.When the weather is warm, hot water is supplied into the upper bath, and both the upper and lower baths are filled with water and cooling is performed in every passage.