Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

Abstract: The invention provides a combustion apparatus which can inhibit an NOx generation even in the case of promoting a mixing between a high-temperature combustion gas and an air so as to intend to reduce an unburned combustible. In a combustion apparatus provided with a burner burning a fuel within a furnace in a theoretical air ratio or less, and an air port supplying a combustion air for a shortfall in the burner, a supply apparatus for supplying a nitrogen oxide generation inhibiting gas is provided in a mixing region between the both or near the mixing region. Further, the invention provides a wind box which can inhibit an NOx generation even in the case of promoting a mixing between a high-temperature combustion gas and an air so as to intend to reduce an unburned combustible.

Abstract: A semiconductor device includes at least one semiconductor constructing body provided on one side of a base member, and having a semiconductor substrate and a plurality of external connecting electrodes provided on the semiconductor substrate. An insulating layer is provided on the one side of the base member around the semiconductor constructing body. An adhesion increasing film is formed between the insulating layer, and at least one of the semiconductor constructing body and the base member around the semiconductor constructing body, for preventing peeling between the insulating layer and the at least one of the semiconductor constructing body and base member.

Abstract: A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

Abstract: In a data management apparatus (1) including a recording device (12) for recording contents data and a data processing section for processing the contents data, first management data for managing the contents data according to a first reference is recorded in the recording device (12), and the data processing section reproduces the contents data based on the first management data, and transfers the contents data to an external device (2) based on second management data which is used for management of the contents data by the external device according to a second reference different from the first reference. As a result, the protection of the contents data can be made while complying with related laws, and the contents data with optional functions added thereto can be backed up.

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: A desulfurizing agent is produced by mixing a copper compound, a zinc compound and an ammonium compound with an aqueous solution of an alkali substance to prepare or precipitate followed by calcitrating the resulting precipitate to form a calcined precipitate into a shape form of a copper oxide-zinc oxide-aluminum oxide mixture. The shaped form is impregnated with iron or nickel and calcined to produce a calcined oxide and reduced with hydrogen to form a sulfur-absorption desulfurizing agent.

Abstract: A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.

Abstract: A recording and reproducing apparatus for reproducing information recorded on a recording medium concurrently while recording the information, includes a compression section, a temporary storage section, a reproducing process section, and a storage section. The compression section reads the information recorded on the recording medium and compresses read information. The temporary storage section stores compressed information provided by the compression process. The reproducing process section decompresses the compressed information output thereto from the temporary storage section and reproduces decompressed information. The storage section stores the compressed information output thereto from the temporary storage section.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: A valve drive device which can prevent a locknut fixing a stem nut to a drive sleeve from getting loosened. The valve drive device comprises: the stem nut for screwing a valve stem thereinto; the drive sleeve engaging with a male spline formed on a peripheral outer surface of said stem nut, said drive sleeve including a worm gear on a peripheral outer surface thereof; a worm in meshing engagement with said worm gear; and a housing that supports said drive sleeve by bearings. The valve drive device further comprises: a stem nut fastening member having a first male screw that engages with a female screw provided on a peripheral inner surface of said drive sleeve; and a locknut that engages with a second male screw provided on a reduced diameter portion of said stem nut fastening member, said second male screw having a reverse screw thread relative to said first male screw, so that no slack may arise between said stem nut fastening member and said drive sleeve.

Abstract: The present invention provides a solid fuel burner, which, while rendering the capacity larger than that in the conventional art, can suppress an increase in an unignited region and thus can realize the prevention of an increase in NOx concentration in a combustion gas and the prevention of a lowering in combustion efficiency, and a combustion equipment and boiler including the burner. The burner includes a fuel-containing fluid supply nozzle (12) which supplies a fuel-containing fluid, from a connecting part in a fluid transfer flow passage (10) for transferring a fuel-containing fluid including a fuel and a medium for transfer of the fuel, toward an outlet part provided on the wall of a furnace (4).

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly. In a crucible having an inner crucible 2 and an outer crucible 3, the crucible protection sheet is arranged between the two crucibles and is made of expanded graphite. The planar thermal conductivity is 120 W/(m·K) or higher, the gas permeability is less than 1.0×10?4 cm2/s, and the compression ratio is 20% or higher when the sheet is compressed in a thickness direction at a pressure of 34.3 MPa. Since the compression ratio is high, the effect of preventing breakage is great when inserting the inner crucible, improving workability and preventing the inner crucible from tilting inside the outer crucible.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

Abstract: A circuit substrate of a grounding structure of a semiconductor device according to the invention has a plurality of connection pads and a grounding wiring. The semiconductor device has a semiconductor substrate having one side face and the other side face opposite thereto, an insulating film formed thereon, an SOI integrated circuit provided thereon and including a plurality of connection pads, and electrodes for external connection each of which is connected to the corresponding connection pad. The semiconductor device has the external connection electrodes connected to the respective connection pads of the circuit substrate by a face-down bonding scheme. An under-filling material is provided between the semiconductor device and the circuit substrate, and there is provided a connection member which connects the other side face of the semiconductor device with the grounding wiring of the circuit substrate, and is made of a conductive material.