Patents by Inventor Osamu Okada

Osamu Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6844292
    Abstract: In a method of manufacturing a copper-zinc-aluminum-based methanol reforming catalyst by coprecipitation, the methanol reforming catalyst is obtained by using a copper compound, a zinc compound and aluminum hydroxide, mixing them with an alkaline substance to produce a precipitate, calcining the precipitate obtained, and reducing the calcined product. Thus, a method is provided for manufacturing a highly active, highly heat resistant and durable methanol reforming catalyst which can be used for a long time even under reaction conditions of 300° C. and higher.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: January 18, 2005
    Assignee: Osaka Gas Co., Ltd.
    Inventors: Osamu Okada, Mitsuaki Echigo
  • Patent number: 6770971
    Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an integrated circuit portion, and a plurality of connecting pads connected to the integrated circuit portion. A plurality of distributing lines are formed on the semiconductor structure, connected to the connecting pads, and have connecting pad portions. An encapsulating layer made of a resin is formed on the semiconductor structure and upper surface of the distributing lines. A copper oxide layer is formed on at least a surface of each of the distributing lines except for the connecting pad portion.
    Type: Grant
    Filed: June 10, 2003
    Date of Patent: August 3, 2004
    Assignee: Casio Computer Co., Ltd.
    Inventors: Ichiro Kouno, Osamu Okada
  • Publication number: 20030230804
    Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an integrated circuit portion, and a plurality of connecting pads connected to the integrated circuit portion. A plurality of distributing lines are formed on the semiconductor structure, connected to the connecting pads, and have connecting pad portions. An encapsulating layer made of a resin is formed on the semiconductor structure and upper surface of the distributing lines. A copper oxide layer is formed on at least a surface of each of the distributing lines except for the connecting pad portion.
    Type: Application
    Filed: June 10, 2003
    Publication date: December 18, 2003
    Applicant: Casio Computer Co., Ltd.
    Inventors: Ichiro Kouno, Osamu Okada
  • Patent number: 6387444
    Abstract: In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.
    Type: Grant
    Filed: February 23, 2000
    Date of Patent: May 14, 2002
    Assignee: Anelva Corporation
    Inventors: Osamu Okada, Atsushi Sekiguchi
  • Publication number: 20010006701
    Abstract: A CVD apparatus for depositing a copper interconnect film on a substrate is equipped with a first CVD module 15 which deposits a copper film as a foundation using a Cu(hfac)(tmvs)-based precursor material having a small film deposition rate, and a second CVD module 16 which performs film deposition to increase the thickness of the copper film using a Cu(hfac)(atms)-based precursor material having a large film deposition rate. The film deposition rate of the Cu(hfac)(tmvs)-based precursor material is about 100 nm per minute and the film deposition rate of the Cu(hfac)(atms)-based precursor material is about 400 nm per minute. This realizes a practical CVD apparatus for mass production which achieves both a high film deposition efficiency and high film quality.
    Type: Application
    Filed: February 20, 2001
    Publication date: July 5, 2001
    Inventors: Akiko Kobayashi, Tomoaki Koide, Minjuan Zhang, Atsushi Sekiguchi, Osamu Okada
  • Patent number: 6219511
    Abstract: An image reading apparatus has a reader to read document images and has a stationary image reading position. A transporter transports a document at constant speed onto the image reading position. The transporter includes a guide member and a transport member. The guide member guides document transport and is provided adjacent to the upstream side of the document reading position in the direction of document transport by the transporter. The transport member transports a document with gripping between the guide member and itself. The transport member is provided above the guide member.
    Type: Grant
    Filed: December 26, 1997
    Date of Patent: April 17, 2001
    Assignee: Minolta Co., Ltd.
    Inventor: Osamu Okada
  • Patent number: 6087924
    Abstract: In a gas sensor which uses CuO as a p-type semiconductor, by adding Na.sub.2 CO.sub.3 in excess of 1 wt % relative to CuO, sensitivity to gases such as H.sub.2, NO, NO.sub.2 and SO.sub.2 is suppressed, whereby selectivity for CO is increased. Sensitivity to CO.sub.2 can also be obtained. In addition, by adding a sodium salt of tungstic acid or molybdic acid, CO.sub.2 sensitivity can be made lower than the CO sensitivity, and CO gas in the exhaust gases discharged from gas-fired water heaters or other combustion equipment can be selectively detected. It is therefore possible to detect incomplete combustion.
    Type: Grant
    Filed: December 15, 1997
    Date of Patent: July 11, 2000
    Assignees: Mikuni Corporation, Osaka Gas Co., Ltd.
    Inventors: Kazuhisa Hasumi, Kentaro Nagano, Hideyuki Horiuchi, Osamu Okada
  • Patent number: 6074976
    Abstract: The present invention relates to a process for the catalytic reduction of nitrogen oxides contained in exhaust gases from combustion, which process comprises bringing said exhaust gases into contact with a Beta Zeolite exchanged with suitable amounts of cobalt salts, in the presence of a light hydrocarbon as the reducing agent. The present invention relates also to a catalyst for such a process, which catalyst comprises a Beta Zeolite exchanged with cobalt salts, characterized by a Co:zeolite Al molar ratio of <0.5.
    Type: Grant
    Filed: September 22, 1998
    Date of Patent: June 13, 2000
    Assignees: Osaka Gas Company Limited, Eniricerche S.p.A.
    Inventors: Takeshi Tabata, Mikako Kokitsu, Osamu Okada, Giuseppe Bellussi, Luigina Maria Flora Sabatino
  • Patent number: 6042798
    Abstract: A method for the desulfurization of hydrocarbons by desulfurizing unsaturated hydrocarbons or hydrocarbon materials containing unsaturated hydrocarbons, in the presence or absence of hydrogen, using a copper-zinc desulfurizing agent prepared by the co-precipitation method. By this method, the sulfur content of the hydrocarbons can be reduced while suppressing hydrogenation of the unsaturated hydrocarbons.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: March 28, 2000
    Assignee: Osaka Gas Company Limited
    Inventors: Masataka Masuda, Osamu Okada, Takeshi Tabata, Yasuhiro Hirai, Hiroki Fujita
  • Patent number: 5993679
    Abstract: A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.
    Type: Grant
    Filed: May 5, 1998
    Date of Patent: November 30, 1999
    Assignee: Anelva Corporation
    Inventors: Tomoaki Koide, Akiko Kobayashi, Ko Sang Tae, Atsushi Sekiguchi, Osamu Okada
  • Patent number: 5993764
    Abstract: The present invention provides a NOx reducing catalyst comprising BEA zeolite which is ion-exchanged with Co to have a Co/Al ratio between 0.2 and 0.6 and is loaded with at least one metal selected from among Ca, Sr, Ba, La, Mn, Ag, In, and Ni. The present invention also provides a NOx reduction process comprising the use of the catalyst of the present invention. The catalyst of this invention provides high activity, high NOx reduction selectivity and durability at low temperature in an actual exhaust gas containing water vapor and other substances disturbing catalytic activity even at low temperature and at low NOx and hydrocarbon concentration.
    Type: Grant
    Filed: December 11, 1996
    Date of Patent: November 30, 1999
    Assignees: Osaka Gas Company Limited, Eniricerche S.p.A.
    Inventors: Takeshi Tabata, Mikako Kokitsu, Osamu Okada, Hirofumi Ohtsuka, Giuseppe Bellussi, Luigina Maria Flora Sabatino
  • Patent number: 5985225
    Abstract: The present invention relates to a catalyst for reduction of nitrogen oxides in exhaust gas containing oxygen by hydrocarbons, which comprises cobalt-loaded zeolite not showing a Raman spectral band assignable to cobalt oxide (Co.sub.3 O.sub.4).
    Type: Grant
    Filed: August 28, 1997
    Date of Patent: November 16, 1999
    Assignees: Osaka Gas Company Limited, Eniricerche S.p.A.
    Inventors: Hirofumi Ohtsuka, Takeshi Tabata, Osamu Okada, Giuseppe Bellussi, Luigina Maria Flora Sabatino
  • Patent number: 5980833
    Abstract: A carbon monoxide sensor including a gas detecting portion and at least a pair of electrodes, wherein the gas detecting portion includes a metal oxide represented by a following formula;Cu.sub.1-x Bi.sub.x O.sub.y(0<x<1 and 1<y<1.5).
    Type: Grant
    Filed: June 27, 1997
    Date of Patent: November 9, 1999
    Assignee: Noritsu Koki Co. Ltd
    Inventors: Katsuki Higaki, Shuzo Kudo, Hisao Ohnishi, Soichi Tabata, Osamu Okada, Yosuke Nagasawa
  • Patent number: 5869013
    Abstract: The present invention relates to a process for the catalytic reduction of nitrogen oxides contained in exhaust gases from combustion, which process comprises bringing said exhaust gases into contact with a Beta Zeolite exchanged with suitable amounts of cobalt salts, in the presence of a light hydrocarbon as the reducing agent. The present invention relates also to a catalyst for such a process, which catalyst comprises a Beta zeolite exchanged with cobalt salts, characterized by a Co: zeolite AL molar ratio of<0.5.
    Type: Grant
    Filed: September 30, 1997
    Date of Patent: February 9, 1999
    Assignee: Osaka Gas Company Limited
    Inventors: Takeshi Tabata, Mikako Kokitsu, Osamu Okada, Giuseppe Bellussi, Luigina Maria Flora Sabatino
  • Patent number: 5685890
    Abstract: A process for steam reforming of hydrocarbons which comprises subjecting a hydrocarbon to steam reforming after desulfurizing the hydrocarbon to a sulfur content of 5 ppb or less.According to the process, a poisoning of steam reforming catalyst by sulfur can be prevented, and stable and economical operation can be attained for a long period.
    Type: Grant
    Filed: May 3, 1995
    Date of Patent: November 11, 1997
    Assignee: Osaka Gas Company Limited
    Inventors: Osamu Okada, Susumu Takami, Tamotu Kotani, Satoshi Mori, Hiroki Fujita, Naoko Fukumura, Masamichi Ippommatsu
  • Patent number: 5618496
    Abstract: P-type semiconductor 15 and n-type semiconductor 16 are formed as thick films or spray-coated onto electrodes 13 and 14 on top of substrates 11 and 12, with films of p-type semiconductor 15 and n-type semiconductor 16 being formed in such manner that they are in mutual contact. If a gas to be detected is introduced to the contact region while a bias voltage is being applied between the two electrodes, an output will be obtained in accordance with the concentration of flammable gas components in the gas being detected. In addition, if a film is formed from a material comprising a mixture of particles of p-type semiconductor and particles of n-type semiconductor, the bias voltage can be an AC voltage.
    Type: Grant
    Filed: March 16, 1995
    Date of Patent: April 8, 1997
    Assignees: Hiroaki Yanagida, Mikuni Corporation, Osaka Gas Co., Ltd.
    Inventors: Kazuhisa Hasumi, Kentaro Nagano, Shuuichi Kamiyama, Hiroaki Yanagida, Osamu Okada
  • Patent number: 5594494
    Abstract: A television camera 12 for picking up a subject and producing an video signal, a plurality of microphones 11L, 11R which are arranged so as to be separate from each other and which collect a vocal sound from the subject filmed by the television camera and output audio signals, an estimating circuit 13 for estimating the position of the sound source on the basis of the audio signals obtained from those microphones, and a coding circuit for encoding the video signal for a specific range of picture area centered the sound source position estimated by the estimating circuit with a larger amount of codes than the video signals for the other picture areas so that the picture area for the specific range may have a higher resolution than the other picture areas construct.
    Type: Grant
    Filed: April 26, 1994
    Date of Patent: January 14, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Osamu Okada, Shigenobu Minami, Shoichiro Yamasaki
  • Patent number: 5555310
    Abstract: According to this invention, a stereo voice transmission apparatus for coding and decoding voice signals input from a plurality of input units includes a discriminating means for discriminating a single utterance mode from a multiple simultaneous utterance mode, a first coding means for coding the voice signal when the discriminating means discriminates the single utterance mode, a first decoding means for decoding voice information coded by the first coding means, a plurality of second coding means, arranged in correspondence with the plurality of input units, for coding the voice signals when the discriminating means discriminates the multiple simultaneous utterance mode, and a plurality of second decoding means, arranged in correspondence with the plurality of second coding means, for decoding pieces of voice information respectively coded by the plurality of second coding means.
    Type: Grant
    Filed: February 14, 1994
    Date of Patent: September 10, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigenobu Minami, Osamu Okada
  • Patent number: 5468565
    Abstract: An oxidation resistant carbon material including a composite material is provided. The composite material is obtained by impregnating a carbon material with a boron oxide and/or a hydrate compound thereof, and baking such carbon material under pressure by inert gas at a temperature of not lower than 1500.degree. C.
    Type: Grant
    Filed: January 7, 1994
    Date of Patent: November 21, 1995
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Osamu Okada, Hiroaki Ogura, Toshiaki Sogabe
  • Patent number: 5449529
    Abstract: There is provided according to the invention a method for producing a composite material mainly composed of a carbon and boron comprising the steps of impregnating a carbon material with a boron oxide and/or a hydrate compound thereof, and baking such carbon material under pressure by inert gas at a temperature of not lower than 1500.degree. C. A neutron absorbent and an oxidation resistant carbon material both including the composite material are also provided.
    Type: Grant
    Filed: August 10, 1993
    Date of Patent: September 12, 1995
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Osamu Okada, Hiroaki Ogura, Toshiaki Sogabe