Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.

Abstract: A high resolution device array with optical probe and method of probing the array is disclosed, including providing on the array substrate an externally activated switch for each row and each column in the array. The switches are connected together into a row circuit and a column circuit on the substrate. The complete array is probed by connecting an external power circuit to the row and column circuits and, using external light sources, such as lasers, to address and activate each device in the array.

Abstract: A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.

Abstract: A display (10) has pixels organized into groups (11, 41) that operate in parallel. Each group (11, 41) distributes the frame time (25) of the display over the number of active pixels within the group thereby maximizing the amount of time each pixel to be illuminated can be active.

Abstract: A multiwavelength LED device including a first LED constructed to emit light of a first wavelength and a second LED constructed to emit light of a second wavelength, different than the first wavelength. The first and second LEDs are stacked vertically on a substrate and positioned to both emit light in the same direction. One of the LEDs is transparent to light emitted by the other of the LEDs so that light from both LEDs is emitted through a single aperture and can be mixed in intensity to produce a variety of wavelengths. The LEDs are individually addressable.

Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.

Abstract: An electro-optic integrated circuit including an addressable array of light emitting devices, a column decoder and a plurality of address lines formed on the substrate. There are n=2{integer[log(m)/log(2)]+1}, where m equals the number of columns, address lines each including an external connection pad. The decoder includes a switching circuit connected to each column for activating the column and a plurality of sets of diodes connected to the address lines and the switching circuits so that each set of diodes has a unique code produced by a combination of diodes in that set and the address lines to which the diodes in that set are connected.

Abstract: A full color light emitting diode display (310) utilizes semiconductor light emitting diodes (313) to produce red light and either organic or semiconductor light emitting diodes (312) to produce blue light. Green light is produced by either semiconductor light emitting diodes (313) or by organic light emitting diodes (343). An array of semiconductor light emitting diodes is formed on a semiconductor substrate (322) and an array of organic or semiconductor light emitting diodes is formed on an optically transparent substrate (311). The optically transparent and semiconductor substrates are attached together to form the multi-wavelength light emitting diode display (310).

Abstract: A full color light emitting diode display (310) utilizes semiconductor light emitting diodes (313) to produce red light and organic light emitting diodes (312) to produce blue light. Green light is produced by either semiconductor light emitting diodes (313) or by organic light emitting diodes (331). An array of semiconductor light emitting diodes is formed on a semiconductor substrate (322) and an array of organic light emitting diodes is also formed on semiconductor substrate (322) adjacent to the array of semiconductor light emitting diodes. The array of organic light emitting diodes cooperates with the array of semiconductor light emitting diodes to form an array of multi-wavelength pixels of the full color light emitting diode display (310).

Abstract: A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.

Abstract: An electro-optic integrated circuit including an addressable array of light emitting devices, a column decoder and a plurality of address lines formed on the substrate. There are address lines each including an external connection pad. The decoder includes a switching circuit connected to each column for activating the column and a plurality of sets of diodes connected to the address lines and the switching circuits so that each set of diodes has a unique code produced by a combination of diodes in that set .and the address lines to which the diodes in that set are connected.

Abstract: A monolithic optoelectronic integrated circuit having an optical emission portion (18) and a drive portion (11, or 22 and 21). The drive portion is capable of accepting TTL and standard CMOS logic voltage levels. In a first embodiment, the monolithic optoelectronic integrated circuit (10) has a light emitting diode (18) driven by a dual gate FET (11). In a second embodiment, the monolithic optoelectronic integrated circuit (20) has a light emitting diode (18) driven by two FETs (22 and 21). In each embodiment (10 or 20), a gate (13 or 23) of the respective drive circuit accepts the TTL or standard CMOS logic voltage. Further, in each embodiment current limiting is accomplished by coupling a gate with the source of the FET (11 or 22). Thus, the output of the light emitting diode (18, 18) is controlled by an input signal to the drive circuit.

Abstract: A method of manufacturing a transmitter optoelectronic integrated circuit (10) which comprises a double heterostructure optical emission device (11) and drive circuitry (16). The optical emission device (11) comprises a plurality of optical emission loci (21) distributed throughout an active layer (12) of the optical emission device (11). Drive circuit (16) comprises a plurality of first portions (17) and a second portion (18) wherein the plurality of first portions (17) are above the plurality of emission loci (21). Second portion (18) is integrated in a lateral orientation with respect to the plurality of first portions (17). The chemical composition of the plurality of first portions (17) are such that they are nonabsorbing to optical emissions from the optical emission device (11).

Abstract: A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.

Abstract: A planar semiconductor laser having low thermal and series resistance is fabricated. The semiconductor laser has an optical waveguide and a lateral current injection path provided by a conductive region. The conductive region disorders the active region and the first 1/4 wave stack of the laser, which reduces the reflectivity, therefore allowing control of the optical waveguide independent of the current flow. By forming the conductive region, the laser of the present invention can have stable optical characteristics and a bigger emission spot due to the weak built-in waveguide, thus resulting in the formation of a device having high output and a low thermal and series resistance.

Abstract: A semiconductor device structure comprises a semiconductor substrate having a semiconductor layer of the same conductivity type formed on its first surface. A drain contact is formed on the second surface of the substrate and conductive regions having the opposite conductivity type of the substrate are formed in the semiconductor layer and are separated by a predetermined distance. Channel regions having the same conductivity type as the substrate are disposed above the conductive regions and source regions are disposed therein. A shielding region is then formed on the surface of the device structure in the area between the conductive regions. The structure allows for reduced or eliminated gate-drain capacitance, reduced output conductance and increased breakdown voltage capability.

Abstract: A vertical III-V compound MESFET is provided. The MESFET has a buried P-type layer which separates the source and the drain regions. A small N-type region in the buried P layer connects the source channel to the drain area. This opening in the buried P layer is located underneath the Schottky gate.