Abstract: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region.

Abstract: A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.

Abstract: A durable polyoxymethylene composition includes a polyoxymethylene copolymer with 1,3-dioxolane as a comonomer, a lubricant, an inorganic filler, a nucleating agent including a sodium salt, a stabilizer, an anti-static agent. A ramp is made of the durable polyoxymethylene. The ramp and the durable polyoxymethylene have excellent micro-wear-resistant property.

Abstract: A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.

Abstract: A manufacture method for a magnesium alloy product includes steps of: providing a mold comprising a upper mold and a lower mold, the upper mold having a punch, the lower mold having a cavity, the punch being adapted to be accommodated in the cavity; heating the mold so as to increase the temperature of the cavity to a determined degree; placing a magnesium alloy billet in the heated cavity; and compressing the upper and lower molds so as to drive the punch to deform the magnesium alloy billet to a magnesium alloy product having a shape corresponding to the cavity. The punch in the cavity and an inner wall of the cavity are configured to have a gap of 0.05 mm˜0.1 mm.

Abstract: An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region.

Abstract: A durable polyoxymethylene composition includes a polyoxymethylene copolymer with 1,3-dioxolane as a comonomer, a lubricant, an inorganic filler, a nucleating agent including a sodium salt, a stabilizer, an anti-static agent. A ramp is made of the durable polyoxymethylene. The ramp and the durable polyoxymethylene have excellent micro-wear-resistant property.

Abstract: The present invention relates to an electric socket having at least two insertion holes of upper lid, a base with two axles, two insertion objects, a touch tone loop and a movable element. The insertion object has two elastic plates and two contact plates, the contact plates respectively have a contact portion; the touch tone loop comprises two movable plates and two fixture plates. The movable plates respectively have a contact portion; the fixture plates respectively have a contact portion corresponding to the contact portion of the contact plates, and a contact portion corresponding to the contact portion of the movable plates. The movable element has two bars, two blocks and two elastic elements. The bar has an end connected to the movable plate and the other end thereof connected to the block.

Abstract: The present invention relates to an electric socket having at least two insertion holes of upper lid, a base with two axles, two insertion objects, a touch tone loop and a movable element. The insertion object has two elastic plates and two contact plates, the contact plates respectively have a contact portion; the touch tone loop comprises two movable plates and two fixture plates. The movable plates respectively have a contact portion; the fixture plates respectively have a contact portion corresponding to the contact portion of the contact plates, and a contact portion corresponding to the contact portion of the movable plates. The movable element has two bars, two blocks and two elastic elements. The bar has an end connected to the movable plate and the other end thereof connected to the block.

Abstract: A durable polyoxymethylene composition and a ramp made of the durable polyoxymethylene composition are disclosed. The durable polyoxymethylene composition of the present invention has excellent micro-wear-resistant property.

Abstract: An action-based in-process software defect prediction (ABDP) applies classifying records of a performed action to predict whether subsequent actions cause defects in a project. A performed action is previously defined herein as an operation performed based on tasks in Work Breakdown Structure (WBS) of the project. Rather than focusing on the reported defects, ABDP discovers the patterns of the performed action that may cause defects composing a historic data set, and uses analytical results to predict whether the subsequent actions are likely to generate defects composing another historic data set. Once actions with high probability of causing the defects are identified, stakeholders review these actions carefully and take appropriate corrective actions to create a fresh performed action. The fresh performed action is continually appended to the historic data sets of amending the defects to construct a new prediction model for further subsequent actions.

Abstract: A service recommendation system, an operating method thereof, and a device containing computer software are provided. The system includes a label module, a service equipment, and a server device. The label module having an ID data of the user is carried by a user. The service equipment has a detection module and a control interface. The detection module obtains and outputs the ID data. The server device includes a database, a determination module, and a service setting module. The database stores a standard model and a user model. The determination module matches the ID data to the database. When the user model corresponding to the ID data exists in the database, the service setting module sets an operating mode according to the user model. When the user model corresponding to the ID data does not exist, the service setting module sets an operating mode according to the standard model.

Abstract: A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

Abstract: A method of resolving display delay includes dividing a period of turning on scan lines of an image into at least two sections. At least one section of the period is for charging pixels while pixels are discharged during the other sections of the period for enabling the charging of scan lines (i.e., enabling pixel displaying). The discharging of scan lines (i.e., erasing pixel displaying) is performed a designated number of scan lines apart so as to achieve the purpose of preventing the liquid crystal display from generating display delay and exhibiting an image-sticking phenomena.

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell and a plurality of reference cells. The source follower, coupled between a first node and the output terminal of the memory cell, clamps the voltage drop across the memory cell to generate a memory cell current flowing through the first node. The source follower circuit, coupled between a plurality of second nodes and the output terminals of the reference cells, clamps the voltage drops across the reference cells to generate a plurality of reference currents respectively flowing through the second nodes. The current mirror circuit, coupled to the first node and the second nodes, duplicates the memory cell current of the first node to affect the reference currents on the second nodes, thereby generating a memory cell voltage on the first node and a plurality of reference voltages on the second nodes.

Abstract: A memory structure and data writing method thereof includes a power supply circuit and a bridge circuit. The bridge circuit is driven by the power supply circuit, and operate in a plurality of conduction modes. The memory structure only requires one set of power supply circuit and does not need to know the resistance of the bit line in advance, also the signal error is hardly occurred when the memory structure is switching between positive and negative.

Abstract: The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.

Abstract: A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

Abstract: A high voltage metal oxide semiconductor includes a doped substrate, two first isolation structures, a gate structure, a source region, a drain region, two second isolation structures, and two drift regions. The two first isolation structures are respectively disposed in the doped substrate. The gate structure is disposed between parts of the two first isolation structures on the doped substrate. The source region and the drain region are respectively disposed beside one side of each of the two first isolation structures in the doped substrate. The top surface of the second isolation structure is smaller than the bottom surface of the first isolation structure. The two drift regions are respectively disposed in the doped substrate, enclosing the source region and the drain region, the two first isolation structures and the second isolation structures.

Abstract: An action-based in-process software defect prediction (ABDP) applies classifying records of a performed action to predict whether subsequent actions cause defects in a project. A performed action is previously defined herein as an operation performed based on tasks in Work Breakdown Structure (WBS) of the project. Rather than focusing on the reported defects, ABDP discovers the patterns of the performed action that may cause defects composing a historic data set, and uses analytical results to predict whether the subsequent actions are likely to generate defects composing another historic data set. Once actions with high probability of causing the defects are identified, stakeholders review these actions carefully and take appropriate corrective actions to create a fresh performed action. The fresh performed action is continually appended to the historic data sets of amending the defects to construct a new prediction model for further subsequent actions.