Patents by Inventor Patrice Gamand

Patrice Gamand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615852
    Abstract: A multi-beam-former for an antenna array is described, the multi-beam former comprises N transceiver terminals for connecting a transmitter and/or receiver and N antenna terminals for connecting to a respective antenna and a plurality of couplers and matrix phase shifters arranged in an N×N Butler matrix configuration between the N transceiver terminals and the N antenna terminals. At least some of the matrix phase shifters include a switchable matrix phase shifter configured to switch between a respective first phase shift value and a respective second phase shift value; a plurality of bypassable phase shifters arranged between at least some of the couplers and the antenna terminals and configured to switch between a respective further phase shift value and a zero phase shift. The multi-beam former is operable to select one of M different beam angles for a signal, wherein M is greater than N.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: April 7, 2020
    Assignee: NXP B.V.
    Inventors: Patrice Gamand, Philippe Descamps
  • Patent number: 10403540
    Abstract: An integrated circuit for a packaged device is proposed. The circuit comprises: a circuit having first and second electromagnetic radiating elements fabricated on a die; a package substrate comprising an upper surface and a lower surface; and a grounding layer provided on the lower surface of the package substrate, the grounding layer being adapted to connect to a grounding plane of a printed circuit board. The die is mounted on the upper surface of the package substrate. The grounding layer comprises a void, at least a portion of the void being positioned so as to at least partially electromagnetically isolate the first electromagnetic radiating element from the second electromagnetic radiating element.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: September 3, 2019
    Assignee: NXP B.V.
    Inventors: Patrice Gamand, Olivier Tesson
  • Patent number: 10396583
    Abstract: A wireless mobile communication device having short range functionality that is designed to always be capable of short range functionality, including secure short range functionality by having a first and second energy source where charging of the second energy source may be achieved by the voltage induced by the received short range signal.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: August 27, 2019
    Assignee: NXP B.V.
    Inventors: Philippe Maugars, Patrice Gamand
  • Publication number: 20170331528
    Abstract: A multi-beam-former for an antenna array is described, the multi-beam former comprises N transceiver terminals for connecting a transmitter and/or receiver and N antenna terminals for connecting to a respective antenna and a plurality of couplers and matrix phase shifters arranged in an N×N Butler matrix configuration between the N transceiver terminals and the N antenna terminals. At least some of the matrix phase shifters include a switchable matrix phase shifter configured to switch between a respective first phase shift value and a respective second phase shift value; a plurality of bypassable phase shifters arranged between at least some of the couplers and the antenna terminals and configured to switch between a respective further phase shift value and a zero phase shift. The multi-beam former is operable to select one of M different beam angles for a signal, wherein M is greater than N.
    Type: Application
    Filed: May 9, 2017
    Publication date: November 16, 2017
    Inventors: Patrice Gamand, Philippe Descamps
  • Publication number: 20170170131
    Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
    Type: Application
    Filed: December 21, 2016
    Publication date: June 15, 2017
    Inventors: Freddy ROOZEBOOM, Adrianus Alphonsus Jozef BUIJSMAN, Patrice GAMAND, Antonius Lucien Adrianus Maria KEMMEREN, Gerardus Tarcisius Maria HUBERT
  • Publication number: 20170032367
    Abstract: A device is disclosed. The device includes a plurality of microphones to receive ultra-sound signals, wherein the ultra-sound signals include an encoded data. The device also includes a microcontroller coupled to the plurality of microphones. The microcontroller is configured to detect the ultra-sound signals through the plurality of microphones. The detection of the ultra-sound signals includes calculating an angle of arrival of the ultra-sound signals at a microphone in the plurality of microphones. The microcontroller is configured to perform a transaction based on the encoded data received via a microphone in the plurality of microphones.
    Type: Application
    Filed: July 6, 2014
    Publication date: February 2, 2017
    Inventors: Joost van Beek, Radu Surdeanu, Franciscus Widdershoven, Patrice Gamand, Rik Jos, Gerardo Daalderop, Hans Rijns
  • Patent number: 9530857
    Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
    Type: Grant
    Filed: June 11, 2004
    Date of Patent: December 27, 2016
    Assignee: Tessera Advanced Technologies, Inc.
    Inventors: Freddy Roozeboom, Adrianus Alphonsus Jozef Buijsman, Patrice Gamand, Antonius Lucien Adrianus Maria Kemmeren, Gerardus Tarcisius Maria Hubert
  • Patent number: 9160052
    Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: October 13, 2015
    Assignee: NXP, B.V.
    Inventors: Olivier Tesson, Patrice Gamand, Sidina Wane
  • Publication number: 20150070240
    Abstract: An integrated circuit for a packaged device is proposed. The circuit comprises: a circuit having first and second electromagnetic radiating elements fabricated on a die; a package substrate comprising an upper surface and a lower surface; and a grounding layer provided on the lower surface of the package substrate, the grounding layer being adapted to connect to a grounding plane of a printed circuit board. The die is mounted on the upper surface of the package substrate. The grounding layer comprises a void, at least a portion of the void being positioned so as to at least partially electromagnetically isolate the first electromagnetic radiating element from the second electromagnetic radiating element.
    Type: Application
    Filed: September 8, 2014
    Publication date: March 12, 2015
    Inventors: Patrice Gamand, Olivier Tesson
  • Publication number: 20130229239
    Abstract: A Lange coupler comprises an unbroken peripheral ground conductor surrounding input, through, coupled and isolated conductor strips coupled to input, through, coupled and isolated ports of the Lange coupler respectively, wherein the peripheral ground conductor and input and through conductor strips are arranged on a first metal layer.
    Type: Application
    Filed: February 28, 2013
    Publication date: September 5, 2013
    Applicant: NXP B.V.
    Inventors: Olivier Tesson, Patrice Gamand, Sidina Wane
  • Patent number: 8519388
    Abstract: The present invention relates to a method and system for testing integrity of a passivation layer (108) covering a semiconductor device. A structured layer of electrically conducting material (104) is deposited onto at least a portion of a top surface of a substrate (102) of the semiconductor device. The structured layer (104) comprises a plurality of bands (104.1, 104.2) connected to at least two contacts (106.1, 106.2) and disposed on the at least a portion of the top surface such that one of consecutive bands (104.1, 104.2) and consecutive portions of the bands (104.1, 104.2) are connected to different contacts (106.1, 106.2). A passivation layer (108) is deposited onto the at least a portion of the top surface of the substrate (102) and the structured layer (104) such that material of the passivation layer(108) is disposed between the bands of conducting material (104.1, 104.2) and on top of the structured layer (104).
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: August 27, 2013
    Assignee: NXP B.V.
    Inventors: Lucie A. Rousseville, Sebastien Jacqueline, Patrice Gamand, Dominique Yon
  • Patent number: 8374546
    Abstract: A wireless mobile communication device having NFC functionality that is designed to always be capable of NFC functionality, including secure NFC functionality by having a first and second energy source where charging of the second energy source may be achieved by the voltage induced by the received NFC signal.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: February 12, 2013
    Assignee: NXP B.V.
    Inventors: Philippe Maugars, Patrice Gamand
  • Publication number: 20120270500
    Abstract: A wireless mobile communication device having NFC functionality that is designed to always be capable of NFC functionality, including secure NFC functionality by having a first and second energy source where charging of the second energy source may be achieved by the voltage induced by the received NFC signal.
    Type: Application
    Filed: June 29, 2012
    Publication date: October 25, 2012
    Applicant: NXP B.V.
    Inventors: Philippe MAUGARS, Patrice GAMAND
  • Patent number: 8238823
    Abstract: The invention provides a method for ensuring a secure NFC functionality of a wireless mobile communication device comprising the steps of detecting the charge state of a first energy source (1) which supplies the voltage for operating the wireless mobile communication device (S1); switching off the first energy source and switching on a second energy source (2), if the detected charge state of the first energy source (1) falls below a threshold (S2); detecting the charge state of the second energy source (2), if an external NFC signal is received (S3); charging of the second energy source via voltage induced by a received NFC signal to allow at least one secure NFC transaction, if the detected charge state of the second energy source (2) is below a threshold (S4). Furthermore the invention provides a wireless mobile communication device having a secure NFC functionality, which is always ready for operation of at least the secure NFC functionality.
    Type: Grant
    Filed: February 2, 2006
    Date of Patent: August 7, 2012
    Assignee: NXP B.V.
    Inventors: Phillipe Maugars, Patrice Gamand
  • Patent number: 8178901
    Abstract: An integrated circuit assembly (ICA) comprises: a digital and/or analog integrated circuit (S1) having a core with input and/or output pins and at least one power supply connection pad (PP) and one ground connection pad (GP) connected to a chosen one of the input and/or output pins and respectively connected to power supply and ground connection zones (MZ1) of a printed circuit board (PCB), and a passive integration substrate (S2) set on top of the digital and/or analog integrated circuit (S1) and comprising i) at least first and second input zones respectively connected to the ground (GP) and power supply (PP) connection pads to be fed with input ground and supply voltages, ii) input and/or output zones connected to chosen core input and/or output pins, and Ëi) a passive integrated circuit (PIC) connected to the first and second input zones and arranged to feed the substrate input and/or output zones with chosen ground and supply voltages defined from the input ground and supply voltages.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: May 15, 2012
    Assignee: ST-Ericsson SA
    Inventors: Patrice Gamand, Jean-Marc Yannou, Fabrice Verjus, Cyrille Cathelin
  • Patent number: 8035565
    Abstract: An antenna device (AD) for a RF communication equipment, comprises i) a substrate (S) comprising front (FS) and back (BS) sides, ii) a planar antenna element (AE) fixed to the substrate back side (BS), iii) a group of at least one component (G1) fixed to the substrate front side (FS), in an area located under the antenna element (AE), and connected to the antenna element (AE) through at least a first connecting means (VH 1) passing through the substrate (S), and a low resistivity layer (BL) buried into the substrate (S) for connecting to ground in order to isolate at least the group of component(s) from electromagnetic disturbances induced by the antenna element (AE).
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: October 11, 2011
    Assignee: NXP B.V.
    Inventor: Patrice Gamand
  • Patent number: 7973604
    Abstract: The present invention relates to a tunable filter device for providing a tunable band pass characteristics for the receive path of a multi-band front-end module. According to the invention is proposed, a distributed, wide-band amplifier with a low-frequency cut-off and a high-frequency cut-off in combination with a LCR network, of which wide-band amplifier the DC blocking capacitors define the low-frequency cut-off of the filter device, whilst the high-frequency cut-off is determined by the cut-off frequency of the artificial input and output transmission lines of the LCR network. In one embodiment, additional capacitors are coupled in parallel to the DC blocking capacitors of the LCR network, switchable by MOS transistors as switching elements. Accordingly, in a certain embodiment it is proposed to allow tuning of the low- and the high-frequency cut-off by programming with a digital control command.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: July 5, 2011
    Assignee: NXP B.V.
    Inventor: Patrice Gamand
  • Publication number: 20110140104
    Abstract: The present invention relates to a method and system for testing integrity of a passivation layer (108) covering a semiconductor device. A structured layer of electrically conducting material (104) is deposited onto at least a portion of a top surface of a substrate (102) of the semiconductor device. The structured layer (104) comprises a plurality of bands (104.1, 104.2) connected to at least two contacts (106.1, 106.2) and disposed on the at least a portion of the top surface such that one of consecutive bands (104.1, 104.2) and consecutive portions of the bands (104.1, 104.2) are connected to different contacts (106.1, 106.2). A passivation layer (108) is deposited onto the at least a portion of the top surface of the substrate (102) and the structured layer (104) such that material of the passivation layer(108) is disposed between the bands of conducting material (104.1, 104.2) and on top of the structured layer (104).
    Type: Application
    Filed: December 17, 2008
    Publication date: June 16, 2011
    Applicant: NXP B.V.
    Inventors: Lucie A. Rousseville, Sebastien Jacqueline, Patrice Gamand, Dominique Yon
  • Patent number: 7839239
    Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: November 23, 2010
    Assignee: NXP B.V.
    Inventors: Marc Sworowski, Patrice Gamand, Pascal Philippe
  • Publication number: 20100156569
    Abstract: The invention relates to a MEMS resonator having at least one mode shape comprising: a substrate (2) having a surface (12), and a resonator structure (1), wherein the resonator structure (1) is part of the substrate (2), characterized in that the resonator structure (1) is defined by a first closed trench (3) and a second closed trench (3), the first trench (3) being located inside the second trench (3) so as to form a tube structure (1) inside the substrate (2), and the resonator structure (1) being released from the substrate (2) only in directions parallel to the surface (12). The invention further relates to a method of manufacturing such a MEMS resonator.
    Type: Application
    Filed: March 8, 2007
    Publication date: June 24, 2010
    Applicant: NXP B.V.
    Inventors: Marc Sworowski, Patrice Gamand, Pascal Philippe