Abstract: The present invention relates to a tunable filter device for providing a tunable band pass characteristics for the receive path of a multi-band front-end module. According to the invention is proposed, a distributed, wide-band amplifier with a low-frequency cut-off and a high-frequency cut-off in combination with a LCR network, of which wide-band amplifier the DC blocking capacitors define the low-frequency cut-off of the filter device, whilst the high-frequency cut-off is determined by the cut-off frequency of the artificial input and output transmission lines of the LCR network. In one embodiment, additional capacitors are coupled in parallel to the DC blocking capacitors of the LCR network, switchable by MOS transistors as switching elements. Accordingly, in a certain embodiment it is proposed to allow tuning of the low- and the high-frequency cut-off by programming with a digital control command.

Abstract: The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: etching a hole in the substrate, creating a first doping zone (Z-DIFF1) for defining a first electrode, partitioning said first electrode into two electrodes, applying a delimited oxide deposit inside and around the hole, defining a second doping zone (Z-DIFF2) totally covering the hole, removing the oxide deposit in order to define an element forming the resonator able to vibrate between the two electrodes.

Abstract: An antenna device (AD) for a RF communication equipment, comprises i) a substrate (S) comprising front (FS) and back (BS) sides, ii) a planar antenna element (AE) fixed to the substrate back side (BS), iii) a group of at least one component (G1) fixed to the substrate front side (FS), in an area located under the antenna element (AE), and connected to the antenna element (AE) through at least a first connecting means (VH 1) passing through the substrate (S), and a low resistivity layer (BL) buried into the substrate (S) for connecting to ground in order to isolate at least the group of component(s) from electromagnetic disturbances induced by the antenna element (AE).

Abstract: An integrated circuit assembly (ICA) comprises: a digital and/or analog integrated circuit (S1) having a core with input and/or output pins and at least one power supply connection pad (PP) and one ground connection pad (GP) connected to a chosen one of the input and/or output pins and respectively connected to power supply and ground connection zones (MZ1) of a printed circuit board (PCB), and a passive integration substrate (S2) set on top of the digital and/or analog integrated circuit (S1) and comprising i) at least first and second input zones respectively connected to the ground (GP) and power supply (PP) connection pads to, be fed with input ground and supply voltages, ii) input and/or output zones connected to chosen core input and/or output pins, and Ëi) a passive integrated circuit (PIC) connected to the first and second input zones and arranged to feed the substrate input and/or output zones with chosen ground and supply voltages defined from the input ground and supply voltages.

Abstract: The invention provides a method for ensuring a secure NFC functionality of a wireless mobile communication device comprising the steps of detecting the charge state of a first energy source (1) which supplies the voltage for operating the wireless mobile communication device (S1); switching off the first energy source and switching on a second energy source (2), if the detected charge state of the first energy source (1) falls below a threshold (S2); detecting the charge state of the second energy source (2), if an external NFC signal is received (S3); charging of the second energy source via voltage induced by a received NFC signal to allow at least one secure NFC transaction, if the detected charge state of the second energy source (2) is below a threshold (S4). Furthermore the invention provides a wireless mobile communication device having a secure NFC functionality, which is always ready for operation of at least the secure NFC functionality.

Abstract: The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of etching a hole in the substrate, creating a first doping zone (Z_DIFF1) for defining a first electrode, partitioning said first electrode into two electrodes, applying a delimited oxide deposit inside and around the hole, defining a second doping zone (Z_DIFF2 ) totally covering the hole, removing the oxide deposit in order to define an element forming the resonator able to vibrate between the two electrodes.

Abstract: The invention relates to a microelectronic chip assembly ASS comprising at least three microelectronic chip ICH, TCH, BCH stacked together and on which integrated devices are formed. At least one of the chip, called intermediate chip ICH, includes via holes VH running through said chip ICH and filled with conductive material is realized from a high-ohmic substrate on which are formed devices for the functioning of at least two other microelectronic chips, called top chip TCH and bottom chip BCH. Said top and bottom chips TCH and BCH are connected by flip chip bonding respectively on top face TF and bottom face BF of said intermediate chip ICH and said via holes VH are electrically connected to pads of said top and bottom chips TCH and BCH.

Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.

Abstract: To isolate at least one electric or electronic element (16, 58), for example an interconnection integrated onto a semiconductor substrate (12), this device comprises at least one isolation means chosen from an isolating layer (84, 86, 90) extending in the substrate and an assembly whose height exceeds that of the element and which comprises, on either side of the element, at least two superposed conductors (60 62 64, 66 68 70), which are integrated into the substrate and extend along the element.

Abstract: An integrated circuit including a substrate, a conductive layer, at least one inductive element superposed on the conductive layer and formed by a metallic turn having an outer contour and an inner contour, which bound between them a surface referred to as the radiation surface, and insulating material for insulating the conductive layer from the inductive element. The conductive layer has a surface substantially identical to the radiation surface.

Abstract: The invention relates to an insulation device (10) intended to prevent the propagation of electromagnetic radiation produced by at least one electric element integrated with a low-resistivity (11) substrate, said insulation device (10) being robust and having uniform isolation properties in space.

Abstract: To isolate at least one electric or electronic element (6, 58), for example an interconnection integrated onto a semiconductor substrate (12), this device comprises at least one isolation means chosen from an isolating layer (84, 86, 90) extending in the substrate and an assembly whose height exceeds that of the element and which comprises, on either side of the element, at least two superposed conductors (60 62 64, 66 68 70), which are integrated into the substrate and extend along the element.

Abstract: The invention relates to an integrated circuit comprising a substrate, a conductive layer (1), at least one inductive element (2) superposed on said conductive layer and formed by a metallic turn having an outer contour and an inner contour, which bound between them a surface referred to as the radiation surface, and means for insulating the conductive layer from the inductive element. The conductive layer has a surface substantially identical to the radiation surface.

Abstract: Semiconductor device for the microwave frequency ranges includes a semiconductor element of the "flip chip" type which comprises a semiconductor substrate having an active surface with at least one integrated circuit, a plurality of metal input-output pads and a circuit of transmission lines of the coplanar type having conductor strips and ground metallizations disposed on the active surface. A circuit of transmission lines of the microstrip type with conductor strips disposed on a surface opposed to the active surface and whose ground metallizations are formed by the ground metallization of the active surface. A base plate comprising an insulating substrate having a front surface with a plurality of metal input-output pads and ground metallizations patterned so as to be in electrical contact with the ground metallizations of the active surface of the semiconductor element when the latter is bonded to the base plate.

Abstract: A preamplifier circuit for a computer data storage system disk drive read/write head (or HSA) includes multiple test modes to enable electrical testing of the preamplifier, the read/write heads, and associated circuitry without physically probing the components or circuitry. Communication between the preamplifier and a host controller provides for test mode selection and test mode enablement within the preamplifier. Testing occurs using only the normal interface connector to the head disk assembly (HDA) in which the preamplifier and HSA are embodied. Properties such as electrical resistance, ESD, preamplifier bond wire connection integrity, head bond wire and solder joint integrity, and connections from the head slider to the preamplifier leads are all tested. Testing occurs without probing to provide efficient, reliable, and cost effective manufacturing and testing benefits of the read/write heads, flex assembly, HSA, and HDA.

Abstract: A semiconductor device including a plurality of interconnected functional blocks of integrated circuits, which include at least an amplifier block, the blocks operating at high and ultrahigh frequencies and having different frequencies with each block comprising at least a DC distribution line. Each block is polarized by the DC voltage of its distribution line and the blocks also include power-matched circuits operating in the ultrahigh frequency range. All of the high frequency and ultrahigh frequency functional blocks are integrated on one and the same substrate for realising the DC supply of all functional blocks at one and the same DC voltage value by one and the same DC voltage distribution line which is common to all the blocks. This is achieved, at least in part by the provision of frequency stabilization circuits for each individual functional amplifier block and also for the common DC distribution line, as well as autopolarization circuits for polarizing each block from the single DC voltage.

Abstract: A semiconductor device microwave integrated circuit includes at least a transistor stage which stage includes a microwave matching circuit and a d.c. bias circuit interconnected at a link node (A). The transistor stage further includes a stabilizing circuit which includes an open stub line connected to the link node. The open stub line connected to the link node is a .lambda./4 line which at the operating frequency imposes a short circuit on the link node. A matching circuit made up of a low-value resistor connected to ground in the microwave mode through a d.c. isolating capacitor is connected to the link node. A .lambda./4 line of the radial type (.lambda./4 radial stub) provides broadband operation.

Abstract: A calibration device is disclosed for hyper-frequency adjustment of the reference planes of an apparatus for measuring the dispersion parameters of elements of circuits integrated on a substrate. The device includes, integrated on the same substrate, standard patterns and accesses to these patterns which are compatible with the contacts of two test probes connected to the apparatus. Also provided on the substrate are at least two identical series of standard patterns which are formed by parallel lines of the same length, including a short-circuit line and/or an open line and/or a load line, whose accesses are aligned within each series, but opposed from one series to another with respect to the zone in which the second ends are situated. Their second ends are aligned within each series, defining the facing reference planes, separated by a given distance d.

Abstract: Microwave frequency device comprising at least a transition between a transmission line (24) integrated on a substrate (23) of a hard material, disposed in a first microwave frequency cavity (31), and waveguides (100) having a second microwave frequency cavity (102a, 102b). This transition comprises an open end (25a, 25b) of the integrated line which end forms a probe inserted over a length l into the cavity of the waveguide, at a distance D from a short-circuit (42a, 42b) which closes off the end of the waveguide.

Abstract: Semiconductor device including a distributed-type monolithic integrated circuit on a substrate, operating in the high frequency and/or microwave range, this distributed circuit having a plurality of coupled stages each having at least a transistor with a first electrode being AC connected to ground. The first electrode is connected to ground by two branches, a first branch being connected directly to a first ground stub and a second branch being connected to a second ground stub through a resistor.