Abstract: A wave transmission line, in the slow-wave mode, is of the microstrip type, including a first conductive layer (11) called lower layer which forms the ground plane, a second conductive layer (12) called upper layer in the form of a strip having specific transverse and longitudinal dimensions, and a third material (1,2) which is not conductive and is disposed between these two conductive layers. This transmission line has, in longitudinal direction, a periodic structure while each period L in length is formed of a bridge (4) followed by a column (13). Each bridge is constituted by an upper conductive strip section (12), having a length of L.sub.1 <L, disposed on the surface of one such first part (1) of the third material, which has a dielectric nature. In addition, each column (13) is a capacitor which may be an active or a passive element. The first conductive layer (11) may further have recesses (5) underneath each bridge.

Abstract: An integrated semiconductor device including a frequency divide-by-two circuit comprising an inverter stage and a switching transistor (T2) which is controlled by a microwave input signal (E). The divider circuit includes an oscillator stage in that the inverter stage is at least equipped with a reactive element which in combination with the inverter stage forms a negative resistant network. The switching transistor is connected in parallel with this reactive element and the transmit time .tau..sub.0 of the switch is less than the transit time .tau..sub.2 of a signal propagating through the reactive element.

Abstract: Package for a very high frequency integrated circuit comprising a housing provided with a recess whose bottom is metallized and provided with peripheral connectors, and including a connection device inserted in the recess between the integrated circuit and the connectors, this connection device including a substrate that presents an upper surface comprising microstrip lines to connect contact studs of the integrated circuit to the connectors of the housing and a metallized lower surface to form a ground plane.

Abstract: An integrated semiconductor arrangement comprising a high-frequency power amplifier stage, which comprises two field-effect transistor having first connection means to influence the output power by means fo the unit gate width of the amplifier stage, and second connection means to influence the value of the input capacitance of the amplifier stage. This stage also comprises means to ensure the feedback of direct current to ground and also includes D.C. biasing means.

Abstract: A high-frequency circuit includes a field-effect transistor having a gate electrode for receiving a high-frequency input signal, a source electrode and a drain electrode. Substantial improvements in both maximum gain and high-frequency performance are achieved by providing an input or output terminal at one end of each electrode, and terminating at least one of the electrodes with an appropriate impedance at its second end.

Abstract: A mixer of the two-transistor type (T.sub.1, T.sub.2) arranged in series by a source S.sub.2 and a drain D.sub.1. A Gate G.sub.1 receives a radio frequency signal RF and a gate G.sub.2 a local oscillator signal L0. Matching networks R.sub.1 and R.sub.2 are provided for the respective signals RF and L0. One element of the network R.sub.3 positioned at the output (drain D.sub.2 of the transistor T.sub.2) restores a short-circuit at the frequency f.sub.L0 of the local oscillator. The instability of the input G.sub.2 of the transistor T.sub.2 is compensated for by an inductor element L inserted between the junction point of the source S.sub.2 and the drain D.sub.1 and the common-mode pole.

Abstract: A broadband distributed amplifier comprised of a plurality of field effect transistors whose gates are connected to junctions between serially-connected inductors forming a gate transmission line, whose drains are connected to junctions between serially-connected inductors forming a drain transmission line, and whose sources are connected to ground. The distribution of the amplifier stages along the gate and drain transmission lines is effected such that these transmission lines are periodically loaded by their own impedances and by the transistor gate and drain capacitances, thus forming artificial lines, and such that a microwave frequency input signal applied to the input of the gate transmission line effects the production of an amplified microwave frequency output signal at the output of the drain transmission line. The gate and drain transmission line output and input, respectively, are terminated by loads.