Abstract: The present invention provides improved methods for fabricating compound-material wafers, in particular a silicon on insulator type wafer. The improved methods lead to reduced numbers of deflects arising on or near the periphery of the wafers. In a first method, wafers are selected in dependence on edge roll off values determined at about 0.5-2.5 mm away from the edge of the wafer, where edge roll off values are determined in dependence on the second derivative of the wafer height profiles. In a second method, wafers selected according to the first method are further processed by bonding, forming a splitting layer, and detaching the two wafers at the splitting layer.

Abstract: This invention provides methods for manufacturing compound-material wafers and methods for recycling donor substrates that results from manufacturing compound-material wafers. The provided methods includes at least one further thermal treatment step configured to at least partially reduce oxygen precipitates and/or nuclei. Reduction of oxygen precipitates and/or nuclei, improves the recycling rate of the donor substrate.

Abstract: A method for forming a semiconductor structure comprising a thin layer of semiconductor material on a receiver wafer is disclosed. The method comprises removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.

Abstract: A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.

Abstract: The ancillary tool according to the invention comprises a handle for manipulating an acetabulum provided, in its distal part, with a head for gripping the acetabulum and, in its proximal part, with a surface for application of a force of impaction. The tool further comprises at least one added endpiece adapted to be removably connected to the distal end of the handle. This endpiece defines both a face for wedging the acetabulum and an opposite face for interaction of the endpiece with the head of the handle, these faces both being borne by a radially deformable supple ring.