Patents by Inventor Patryk GUMANN

Patryk GUMANN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210201187
    Abstract: Systems, computer-implemented methods, and computer program products that can facilitate determining a state of a qubit are described. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a relation determining component that can determine relation of a status signal of a quantum computing device to a noise value of the quantum computing device. The system can further include an operation time estimator that can estimate an operation time for the quantum computing device based on the relation of the status signal to the noise value.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Inventors: Salvatore Bernardo Olivadese, Daniela Florentina Bogorin, Nicholas Torleiv Bronn, Sean Hart, Patryk Gumann
  • Publication number: 20210151575
    Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 20, 2021
    Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
  • Publication number: 20210143311
    Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A reflectrometry wire comprising a second metal within the reflectrometry region is formed. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 13, 2021
    Applicant: International Business Machines Corporation
    Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Ning Li, Stephen W. Bedell, Patryk Gumann
  • Publication number: 20210143310
    Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A sensing region gate is formed by coupling the semiconductor layer with a second metal layer. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 13, 2021
    Applicant: International Business Machines Corporation
    Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Stephen W. Bedell, Ning Li, Patryk Gumann
  • Publication number: 20210143312
    Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of a first surface of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. The sensing region and a portion of the device region of the superconductor layer are exposed. A sensing region contact is formed by coupling the first surface of the semiconductor layer with a first metal layer. A nanorod contact using the first metal within the portion of the device region outside the sensing region is formed. By depositing a second metal layer on a second surface of the semiconductor layer within the sensing region, a tunnel junction gate is formed.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 13, 2021
    Applicant: International Business Machines Corporation
    Inventors: Steven J. Holmes, Stephen W. Bedell, Sean Hart, Devendra K. Sadana, Ning Li, Patryk Gumann
  • Patent number: 11005574
    Abstract: A system for optical transduction of quantum information includes a qubit chip including a plurality of data qubits configured to operate at microwave frequencies, and a transduction chip spaced apart from the qubit chip, the transduction chip including a microwave-to-optical frequency transducer. The system includes an interposer coupled to the qubit chip and the transduction chip, the interposer including a dielectric material including a plurality of superconducting microwave waveguides formed therein. The plurality of superconducting microwave waveguides is configured to transmit quantum information from the plurality of data qubits to the microwave-to-optical frequency transducer on the transduction chip, and the microwave-to-optical frequency transducer is configured to transduce the quantum information from the microwave frequencies to optical frequencies.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: May 11, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Nicholas T. Bronn, Daniela F. Bogorin, Patryk Gumann, Sean Hart, Salvatore B. Olivadese, Jason S. Orcutt
  • Publication number: 20210119313
    Abstract: The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.
    Type: Application
    Filed: December 23, 2020
    Publication date: April 22, 2021
    Inventors: Salvatore Bernardo Olivadese, Patryk Gumann, Jay M. Gambetta, Jerry M. Chow
  • Patent number: 10984335
    Abstract: A system for transmission of quantum information for quantum error correction includes an ancilla qubit chip including a plurality of ancilla qubits, and a data qubit chip spaced apart from the ancilla qubit chip, the data qubit chip including a plurality of data qubits. The system includes an interposer coupled to the ancilla qubit chip and the data qubit chip, the interposer including a dielectric material and a plurality of superconducting structures formed in the dielectric material. The superconducting structures enable transmission of quantum information between the plurality of data qubits on the data qubit chip and the plurality of ancilla qubits on the ancilla qubit chip via virtual photons for quantum error correction.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: April 20, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Nicholas T. Bronn, Daniela F. Bogorin, Patryk Gumann, Sean Hart, Salvatore B. Olivadese
  • Publication number: 20210111471
    Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).
    Type: Application
    Filed: December 21, 2020
    Publication date: April 15, 2021
    Applicant: International Business Machines Corporation
    Inventors: SALVATORE B. OLIVADESE, PATRYK GUMANN, JERRY M. CHOW
  • Publication number: 20210111469
    Abstract: An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 15, 2021
    Inventors: Patryk Gumann, Salvatore Bernardo Olivadese
  • Patent number: 10978769
    Abstract: A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through the second polyimide film to make electrical and thermal contact with the first center conductor.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: April 13, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Salvatore B. Olivadese, Patryk Gumann, Jerry M. Chow
  • Patent number: 10971790
    Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).
    Type: Grant
    Filed: May 21, 2020
    Date of Patent: April 6, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Salvatore B. Olivadese, Patryk Gumann, Jerry M. Chow
  • Patent number: 10964993
    Abstract: The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: March 30, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Salvatore Bernardo Olivadese, Patryk Gumann, Jay M. Gambetta, Jerry M. Chow
  • Publication number: 20210076530
    Abstract: Devices, systems, methods, and computer-implemented methods to facilitate employing thermalizing materials in an enclosure for quantum computing devices are provided. According to an embodiment, a system can comprise a quantum computing device and an enclosure having the quantum computing device disposed within the enclosure. The system can further comprise a thermalizing material disposed within the enclosure, with the thermalizing material being adapted to thermally link a cryogenic device to the quantum computing device.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 11, 2021
    Inventors: Sean Hart, Daniela Florentina Bogorin, Nicholas Torleiv Bronn, Patryk Gumann, Salvatore Bernardo Olivadese
  • Publication number: 20210068320
    Abstract: Techniques regarding shielding one or more superconducting devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can comprise a multi-layer enclosure that shields a superconducting device from a magnetic field and radiation. Further, the multi-layer enclosure can comprise a superconducting material layer that can have a thickness that inhibits a penetration of the multi-layer enclosure by the magnetic field. The multi-layer enclosure can also comprise a metal layer adjacent to the superconducting material layer. The metal layer can have a high thermal conductivity that achieves thermalization with the superconducting material layer. Moreover, the multi-layer enclosure can comprise a radiation shield layer adjacent to the superconducting material layer.
    Type: Application
    Filed: August 30, 2019
    Publication date: March 4, 2021
    Inventors: Daniela Florentina Bogorin, Sean Hart, Patryk Gumann, Nicholas Torleiv Bronn, Salvatore Bernardo Olivadese, Oblesh Jinka
  • Publication number: 20210043823
    Abstract: A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 11, 2021
    Inventors: Devendra K. Sadana, Ning Li, Stephen W. Bedell, Sean Hart, Patryk Gumann
  • Publication number: 20210028345
    Abstract: A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. The device further includes an electron system coupled to the resonator structure, and a gate positioned proximal to a portion of the electron system. The electron system and the gate are configured to interrupt the resonator structure at one or more predetermined locations forming a switch. The gate is configured to receive a gate voltage and vary an inductance of the electron system based upon the gate voltage. The varying of the inductance induces the resonator structure to vary a strength of coupling between the first device and the second device.
    Type: Application
    Filed: October 1, 2020
    Publication date: January 28, 2021
    Applicant: International Business Machines Corporation
    Inventors: Sean Hart, Jay M. Gambetta, Patryk Gumann
  • Patent number: 10903541
    Abstract: A hybrid microwave attenuator is constructed by forming a circuit and a housing. The circuit has two ports, a resistive component configured to attenuate some frequencies in an input signal (transmitted signal), and a dispersive component configured to attenuate some frequencies within a frequency range. The resistive component and the dispersive component are arranged in a series configuration relative to one another between the two ports of the circuit. The housing includes a closable structure in which the circuit is positioned, the structure being formed of a material that exhibits at least a threshold level of thermal conductivity, where the threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum computing circuit operates. The housing further includes a pair of microwave connectors, the pair of connectors being thermally coupled to the housing.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: January 26, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Baleegh Abdo, Patryk Gumann
  • Patent number: 10897069
    Abstract: An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: January 19, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Patryk Gumann, Salvatore Bernardo Olivadese
  • Publication number: 20210013570
    Abstract: An architecture for, and techniques for fabricating, a cryogenic microwave filter having reduced Kapitza resistance are provided. In some embodiments, the cryogenic microwave filter can comprise a substrate and a conductive line. The substrate can be formed of a material having a thermal conductivity property that sufficiently reduces Kapitza resistance in the cryogenic environment. The conductive line can be formed in a recess of the substrate and facilitate a filter operation on a microwave signal propagated in a cryogenic environment. In some embodiments, the conductive line can be formed according to a sintering technique that can reduce Kapitza resistance.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 14, 2021
    Inventors: Patryk Gumann, Salvatore Bernardo Olivadese