Abstract: A system for transmission of quantum information for quantum error correction includes an ancilla qubit chip including a plurality of ancilla qubits, and a data qubit chip spaced apart from the ancilla qubit chip, the data qubit chip including a plurality of data qubits. The system includes an interposer coupled to the ancilla qubit chip and the data qubit chip, the interposer including a dielectric material and a plurality of superconducting structures formed in the dielectric material. The superconducting structures enable transmission of quantum information between the plurality of data qubits on the data qubit chip and the plurality of ancilla qubits on the ancilla qubit chip via virtual photons for quantum error correction.

Abstract: A device for a centrifugation container, such as a tube, is for separation of liquid fractions having a desired density range, in particular to biological and/or liquids forming suspensions. The device has a partition (7) that separates the interior of the container (1) into at least two chambers in a vertical arrangement—an upper chamber (2) and a lower chamber (3). The device having the partition (7) has an aperture (4) which can be lined up with the guide (12), on which liquids, in particular a fluid sample, can flow down from an upper chamber (3) to a lower chamber (4), of the container (1) for centrifugation. A method using the device separates out a fraction having the desired density range from the sample containing fractions of different density.

Abstract: A quantum computer includes a quantum computing system; a transducer disposed inside the quantum computing system, the transducer being configured to receive an optical control propagating wave and output a microwave control propagating wave; and a quantum processor comprising a plurality of qubits, the plurality of qubits being disposed in the quantum computing system, each qubit of the plurality of qubits being configured to receive at least a portion of the microwave control propagating wave to control a quantum state of each qubit of the plurality of qubits.

Abstract: An architecture for, and techniques for fabricating, a cryogenic microwave filter having reduced Kapitza resistance are provided. In some embodiments, the cryogenic microwave filter can comprise a substrate and a conductive line. The substrate can be formed of a material having a thermal conductivity property that sufficiently reduces Kapitza resistance in the cryogenic environment. The conductive line can be formed in a recess of the substrate and facilitate a filter operation on a microwave signal propagated in a cryogenic environment. In some embodiments, the conductive line can be formed according to a sintering technique that can reduce Kapitza resistance.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A sensing region gate is formed by coupling the semiconductor layer with a second metal layer. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of a first surface of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. The sensing region and a portion of the device region of the superconductor layer are exposed. A sensing region contact is formed by coupling the first surface of the semiconductor layer with a first metal layer. A nanorod contact using the first metal within the portion of the device region outside the sensing region is formed. By depositing a second metal layer on a second surface of the semiconductor layer within the sensing region, a tunnel junction gate is formed.

Abstract: A transition between a printed circuit board and a dielectric layer with controlled impedance and reduced and/or mitigate crosstalk for quantum applications are provided. A quantum device can comprise a microwave quantum circuit on a dielectric substrate and a printed circuit board comprising a via that comprises a transmission line. A wirebond between the transmission line of the printed circuit board and a transmission line of the microwave quantum circuit operatively couples the microwave quantum circuit to the printed circuit board. The via comprises a defined characteristic impedance. The wirebond provides a microwave signal connection between the printed circuit board and the microwave quantum circuit.

Abstract: Systems, computer-implemented methods, and computer program products that can facilitate determining a state of a qubit are described. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a relation determining component that can determine relation of a status signal of a quantum computing device to a noise value of the quantum computing device. The system can further include an operation time estimator that can estimate an operation time for the quantum computing device based on the relation of the status signal to the noise value.

Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of a first surface of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. The sensing region and a portion of the device region of the superconductor layer are exposed. A sensing region contact is formed by coupling the first surface of the semiconductor layer with a first metal layer. A nanorod contact using the first metal within the portion of the device region outside the sensing region is formed. By depositing a second metal layer on a second surface of the semiconductor layer within the sensing region, a tunnel junction gate is formed.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A sensing region gate is formed by coupling the semiconductor layer with a second metal layer. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.

Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A reflectrometry wire comprising a second metal within the reflectrometry region is formed. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.

Abstract: A system for optical transduction of quantum information includes a qubit chip including a plurality of data qubits configured to operate at microwave frequencies, and a transduction chip spaced apart from the qubit chip, the transduction chip including a microwave-to-optical frequency transducer. The system includes an interposer coupled to the qubit chip and the transduction chip, the interposer including a dielectric material including a plurality of superconducting microwave waveguides formed therein. The plurality of superconducting microwave waveguides is configured to transmit quantum information from the plurality of data qubits to the microwave-to-optical frequency transducer on the transduction chip, and the microwave-to-optical frequency transducer is configured to transduce the quantum information from the microwave frequencies to optical frequencies.

Abstract: The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.

Abstract: A system for transmission of quantum information for quantum error correction includes an ancilla qubit chip including a plurality of ancilla qubits, and a data qubit chip spaced apart from the ancilla qubit chip, the data qubit chip including a plurality of data qubits. The system includes an interposer coupled to the ancilla qubit chip and the data qubit chip, the interposer including a dielectric material and a plurality of superconducting structures formed in the dielectric material. The superconducting structures enable transmission of quantum information between the plurality of data qubits on the data qubit chip and the plurality of ancilla qubits on the ancilla qubit chip via virtual photons for quantum error correction.

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).

Abstract: An architecture for, and techniques for fabricating, a thermal decoupling device are provided. In some embodiments, thermal decoupling device can be included in a thermally decoupled cryogenic microwave filter. In some embodiments, the thermal decoupling device can comprise a dielectric material and a conductive line. The dielectric material can comprise a first channel that is separated from a second channel by a wall of the dielectric material. The conductive line can comprise a first segment and a second segment that are separated by the wall. The wall can facilitate propagation of a microwave signal between the first segment and the second segment and can reduce heat flow between the first segment and the second segment of the conductive line.

Abstract: A stripline that is usable in a quantum application (q-stripline) includes a first polyimide film and a second polyimide film. The q-stripline further includes a first center conductor and a second center conductor formed between the first polyimide film and the second polyimide film. The q-stripline has a first pin configured through the second polyimide film to make electrical and thermal contact with the first center conductor.

Abstract: A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (TH) with a structure of a dilution fridge stage (stage).

Abstract: The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.