Abstract: The present invention relates to a dental composition and a dental kit comprising a polymerisable adhesive free of a photoinitiator, and a self-cure composite restorative including a redox initiator system. The dental composition cures upon contact between the self-cure composite restorative and the adhesive, to thereby form a dental restoration. The present invention also relates to a method of applying the dental composition, and methods of replacing a dental amalgam with the dental composition, or dental kit, of the present invention.

Abstract: The present invention relates to an aqueous Silver Fluoride (AgF) containing solutions with pH 4.0-5.3.

Abstract: A dental adhesive composition, having a solvent which is an azeotrope of methyl ethyl ketone with water. Optionally, the azeotropic solvent may comprise in addition, ethanol or isopropanol. The boiling point of the solvent is less than 75° C.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: Circuits, systems, and methods are disclosed for SRAM memories. An SRAM includes memory cells wherein read stability and write stability can be modified by adjusting a well bias signal operably coupled to an N-well of the memory cell. The well bias signal is generated at VDD or at a bias offset from VDD for both the read and the write operations. The memory cells may be adjusted for operation by designing the memory device to be stable relative to local parameter variations with a well bias substantially equal to VDD. The memory cells are then tested for stable read operations and stable write operations. If the write operations are unstable or the read operations are unstable, the well bias is modified and the memory cells are tested again.

Abstract: Circuits, systems, and methods are disclosed for SRAM memories. An SRAM includes memory cells wherein read stability and write stability can be modified by adjusting a well bias signal operably coupled to an N-well of the memory cell. The well bias signal is generated at VDD or at a bias offset from VDD for both the read and the write operations. The memory cells may be adjusted for operation by designing the memory device to be stable relative to local parameter variations with a well bias substantially equal to VDD. The memory cells are then tested for stable read operations and stable write operations. If the write operations are unstable or the read operations are unstable, the well bias is modified and the memory cells are tested again.

Abstract: A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of impurity elements, including at least one dopant element. Selection of a plurality of impurity elements includes selecting a first impurity element with a first atomic radius larger than an average host matrix atomic radius and selecting a second impurity element with a second atomic radius smaller than an average host matrix atomic radius. The methods and devices further include selecting amounts of each impurity element of the plurality of impurity elements wherein amounts and atomic radii of each of the plurality of impurity elements complement each other to reduce a host matrix lattice strain.

Abstract: A method and device for cooling an integrated circuit is provided. A method and device using a gas to cool circuit structures such as a number of air bridge structures is provided. A method and device using a boiling liquid to cool circuit structures is provided. Further provided is a method of controlling chip temperature. This allows circuit and device designers an opportunity to design more efficient structures. Some properties that exhibit less variation when temperature ranges are controlled include electromigration, conductivity, operating speed, and reliability.

Abstract: A method and device for cooling an integrated circuit is provided. A method and device using a gas to cool circuit structures such as a number of air bridge structures is provided. A method and device using a boiling liquid to cool circuit structures is provided. Further provided is a method of controlling chip temperature. This allows circuit and device designers an opportunity to design more efficient structures. Some properties that exhibit less variation when temperature ranges are controlled include electromigration, conductivity, operating speed, and reliability.

Abstract: Gates of at least one of NMOS transistors and PMOS transistors of a CMOS integrated circuit are formed with a solid-solution alloy of at least two metals. The work function of the gate electrode is tunable by controlling the selection of the metals or the relative proportion of the metals that form a layer of the solid-solution alloy. In one embodiment, a layer of each metal is deposited onto the gate area of a MOS transistor. At least one metal is deposited using atomic layer deposition. The solid-solution alloy is formed by annealing subsequent to the deposition of the metals.