Abstract: The present invention relates to a dental composition and a dental kit comprising a polymerisable adhesive free of a photoinitiator, and a self-cure composite restorative including a redox initiator system. The dental composition cures upon contact between the self-cure composite restorative and the adhesive, to thereby form a dental restoration. The present invention also relates to a method of applying the dental composition, and methods of replacing a dental amalgam with the dental composition, or dental kit, of the present invention.

Abstract: The present invention relates to an aqueous Silver Fluoride (AgF) containing solutions with pH 4.0-5.3.

Abstract: A dental adhesive composition, having a solvent which is an azeotrope of methyl ethyl ketone with water. Optionally, the azeotropic solvent may comprise in addition, ethanol or isopropanol. The boiling point of the solvent is less than 75° C.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region has a channel region and the isolation regions have strain-inducing regions laterally adjacent to the channel regions. The channel region is strained with a desired strain for carrier mobility enhancement, where at least one ion type is implanted with an energy resulting in a peak implant in the strain-inducing regions of the isolation regions. Other aspects and embodiments are provided herein.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: In various method embodiments, a device region in a semiconductor substrate and isolation regions adjacent to the device region are defined. The device region has a channel region and the isolation regions have strain-inducing regions laterally adjacent to the channel regions. The channel region is strained with a desired strain for carrier mobility enhancement, where at least one ion type is implanted with an energy resulting in a peak implant in the strain-inducing regions of the isolation regions. Other aspects and embodiments are provided herein.

Abstract: Devices and methods are described including a multi-chip assembly. Embodiments of multi-chip assemblies are provided that uses both lateral connection structures and through chip connection structures. One advantage of this design includes an increased number of possible connections. Another advantage of this design includes shorter distances for interconnection pathways, which improves device performance and speed.

Abstract: A gaming system and method of rewarding players of electronic gaming machines connected by a network to a host computer which stores player-useable points at a network-accessible location, awards a personal points multiplier to a player, and applies the personal points multiplier to at least some of the points.

Abstract: A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of dopant elements. Selection of a plurality of dopant elements includes selecting a first dopant element with a first atomic radius larger than a host matrix atomic radius and selecting a second dopant element with a second atomic radius smaller than a host matrix atomic radius. The methods and devices further include selecting amounts of each dopant element of the plurality of dopant elements wherein amounts and atomic radii of each of the plurality of dopant elements complement each other to reduce a host matrix lattice strain. The methods and devices further include introducing the plurality of dopant elements to a selected region of the host matrix and annealing the selected region of the host matrix.

Abstract: The present invention includes methods for stressing transistor channels of semiconductor device structures. Such methods include the formation of so-called near-surface “nanocavities” adjacent to the source/drain regions, forming extensions of the source/drain regions adjacent to and including the nanocavities, and implanting matter of a type that will expand or contract the volume of the nanocavities, depending respectively upon whether compressive strain is desirable in transistor channels between the nanocavities, as in PMOS field effect transistors, or tensile strain is wanted in transistor channels, as in NMOS field effect transistors, to enhance carrier mobility and transistor speed. Semiconductor device structures and semiconductor devices including these features are also disclosed.

Abstract: Some embodiments include a device having a number of memory cells and associated circuitry for accessing the memory cells. The memory cells of the device may be formed in one or more memory cell dice. The associated circuitry of the device may also be formed in one or more dice, optionally separated from the memory cell dice.

Abstract: Methods and devices for multi-chip stacks are shown. A method is shown that assembles multiple chips into stacks by stacking wafers prior to dicing into individual chips. Methods shown provide removal of defective chips and their replacement during the assembly process to improve manufacturing yield.