Abstract: A method for annealing a material includes providing a substrate with a metal-containing material in proximity to or in contact with the material on a surface of the substrate, and exposing the metal-containing material to hydrogen radicals, where the thermal energy from the recombination of the hydrogen radicals locally heats the metal-containing material and thereby transfers the thermal energy to the material, thereby locally annealing the material.

Abstract: A method of depositing material and a system for depositing material are disclosed. Exemplary methods include dosing a substrate with a precursor and/or reactant while varying a pressure within the reaction chamber.

Abstract: Various embodiments of the present technology may provide a reactor, a first vessel having an inlet coupled to an inlet of the reactor, a second vessel having an inlet coupled to the inlet of the reactor, and an exhaust line coupled to an outlet of the reactor, the inlet of the first vessel, and the inlet of the second vessel. The first and second vessels may be configured to receive a vapor though the exhaust line and recondense the vapor into a solid material to be reused during a precursor pulsing step.

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

Abstract: Physical vapor deposition (PVD) systems and modules are disclosed. Exemplary systems can include one or more PVD modules, a degas module, a preclean module, and/or one or more ancillary modules. The ancillary modules can be used as cool down modules, metrology modules, or the like.

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Various embodiments of the present technology may provide a method for fabricating a semiconductor structure. The method may include receiving a source substrate having a dielectric layer and a conductive feature, selectively depositing a barrier layer only on a top surface of the conductive feature, modifying a top surface of the dielectric layer, and removing the barrier layer after modifying the dielectric layer. The method may also include cleaning a top layer of the dielectric and conductive feature prior to depositing the barrier layer.

Abstract: Reactor systems and methods for rapidly modulating a temperature of a substrate are disclosed. Exemplary reactor systems can include one more temperature regulating gas sources coupled to a reaction chamber of a reactor. Additionally or alternatively, exemplary reactor systems can include a lift pin assembly that can move a substrate away from a susceptor surface during processing.

Abstract: Apparatus for supplying a vaporized reactant to a reaction chamber are disclosed. The apparatus disclosed includes a process control chamber in fluid communication with a supply vessel and an injection gas source is fluid communication with the process control chamber and configured to enable modification of the pressure within the process control chamber. Reactor systems including the apparatus for supplying a vaporized reactant to a reaction chamber are also disclosure. Methods for supplying vaporized reactant to a reaction are also disclosed.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Abstract: A method for selective deposition of a molybdenum film, comprising supporting a substrate in a reaction chamber, the substrate comprising a metal surface and an adjacent dielectric surface; selectively depositing the molybdenum film on the metal surface relative to the dielectric surface responsive to contacting the substrate with a first precursor containing a molybdenum oxyhalide in a cyclic deposition process; etching the molybdenum film responsive to contacting the substrate with a second precursor containing molybdenum halide in a cyclic etching process; and purging the reaction chamber.

Abstract: A substrate lift pin assembly, a system including the assembly, and methods of using the same are disclosed. The assembly can include one or more lift pins and a sensor to determine one or more of presence and condition information of the one or more lift pins. The system can be configured to provide an alarm and/or to cease operations based on the presence and/or condition information.

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Abstract: Disclosed is a method, system and apparatus for filling a gap feature on a substrate surface, comprising providing a substrate with a surface comprising a gap feature in a reaction chamber, depositing a first material layer into the gap feature with a first cyclic deposition process, etching the first material layer to form a base in a bottom portion of the gap feature with a cyclic etching process and partially filling the gap feature with a second material layer with a second cyclic deposition process.

Abstract: Methods for forming transition metal layers on a surface of a substrate are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.