Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

Abstract: Methods for forming structures with reduced feature (e.g., line) bending are provided. Exemplary methods include using a cyclic deposition process, forming a layer comprising one or more of molybdenum, tungsten, and ruthenium, and providing a nitrogen-containing reactant to the reaction chamber to form a transient surface species. Use of the nitrogen-containing reactant is thought to mitigate metal interactions that are thought to contribute to feature bending.

Abstract: A reactor can include a reaction chamber, a substrate support configured to support a substrate on a top side of the substrate support, and an elongate delivery apparatus disposed within the reaction chamber. The substrate support may be actuated to an upper position and to a lower position along a vertical axis within the reaction chamber. The substrate support may have a maximum horizontal dimension from the vertical axis along a horizontal axis substantially orthogonal to the vertical axis. The elongate delivery apparatus may have an inner horizontal dimension greater than the maximum horizontal dimension of the substrate support. The delivery apparatus can allow gas to pass through an interior of the delivery apparatus. The delivery apparatus can include a plurality of apertures. Each of the plurality of apertures can allow passage of the gas from the interior of the delivery apparatus into the reaction chamber.

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes providing blocking molecules within a reaction chamber and providing a precursor within the reaction chamber, wherein the blocking molecules inhibit deposition on a top surface of the substrate, relative to a surface within a gap on the substrate surface.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Methods of and reactor systems for selectively depositing a material on a surface of a substrate are disclosed. Exemplary methods include selectively treating a second surface to form a passivation layer on the second surface and selectively depositing metal material on a first surface to form selectively deposited metal.

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 ?) and can be used to deposit thicker films (e.g., greater than 50 ? in some cases and greater than 200 ? in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

Abstract: A method for forming a semiconductor device. An exemplary method includes optionally forming an oxide layer and forming a passivation layer. Forming the passivation layer includes providing a treatment precursor to the reaction chamber. The treatment precursor can be or include an organic silicon-containing precursor or an organic boron-containing precursor.

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

Abstract: Herein disclosed are systems and methods related to solid source chemical intermediate fill vessels. The fill vessel can include a proximate end, a distal end, and a base disposed at the proximate end that is configured to hold solid source chemical reactant therein. The intermediate fill vessel can further include a lid at the distal end comprising a second thermal conductor. The lid can include a chemical inlet, a carrier gas inlet, and a chemical outlet. The fill vessel can further include an intermediate layer that is disposed between the base and the lid. The intermediate layer may include an insulator that is configured to reduce heat flow between the base and the lid.

Abstract: Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

Abstract: A method for depositing a metal film into a feature on a substrate is disclosed. In particular, the method may comprise a low temperature plasma deposition step, a thermal etching step, and a selective filling step. This method allows for deposition of a metal film that has a lower contact resistance at an interface, resulting in a better electrical performance of a semiconductor device.

Abstract: A method for annealing a material includes providing a substrate with a metal-containing material in proximity to or in contact with the material on a surface of the substrate, and exposing the metal-containing material to hydrogen radicals, where the thermal energy from the recombination of the hydrogen radicals locally heats the metal-containing material and thereby transfers the thermal energy to the material, thereby locally annealing the material.

Abstract: A method of depositing material and a system for depositing material are disclosed. Exemplary methods include dosing a substrate with a precursor and/or reactant while varying a pressure within the reaction chamber.

Abstract: Various embodiments of the present technology may provide a reactor, a first vessel having an inlet coupled to an inlet of the reactor, a second vessel having an inlet coupled to the inlet of the reactor, and an exhaust line coupled to an outlet of the reactor, the inlet of the first vessel, and the inlet of the second vessel. The first and second vessels may be configured to receive a vapor though the exhaust line and recondense the vapor into a solid material to be reused during a precursor pulsing step.

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

Abstract: Physical vapor deposition (PVD) systems and modules are disclosed. Exemplary systems can include one or more PVD modules, a degas module, a preclean module, and/or one or more ancillary modules. The ancillary modules can be used as cool down modules, metrology modules, or the like.