Abstract: Methods for forming transition metal layers on a surface of a substrate are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: Various examples of the present disclosure relate to methods, systems, and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel, maintaining a temperature gradient within an inner volume of the delivery vessel, and returning the chemical to the first phase within the inner volume.

Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

Abstract: Described herein are example, method, system and apparatus for supporting a substrate in a chamber wherein the substrate comprises a surface, contacting the surface of the substrate with an excited species within the chamber, contacting the surface of the substrate with an etchant species within the chamber and removing organic residue or non-organic residue, or a combination thereof, from the surface of the substrate responsive to executing the above steps.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor plate and a susceptor attachment. The susceptor attachment can comprise a ramp region and a conductance control region above and exterior to the ramp region. Methods, systems, and assemblies can be used to obtain desired (e.g., composition and/or thickness) profiles of material on a substrate surface.

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

Abstract: Methods for forming structures with reduced feature (e.g., line) bending are provided. Exemplary methods include using a cyclic deposition process, forming a layer comprising one or more of molybdenum, tungsten, and ruthenium, and providing a nitrogen-containing reactant to the reaction chamber to form a transient surface species. Use of the nitrogen-containing reactant is thought to mitigate metal interactions that are thought to contribute to feature bending.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.