Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Abstract: Methods and systems for forming transition metal layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.

Abstract: Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Abstract: Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: Herein disclosed are systems and methods related to solid source chemical intermediate fill vessels. The fill vessel can include a proximate end, a distal end, and a base disposed at the proximate end that is configured to hold solid source chemical reactant therein. The intermediate fill vessel can further include a lid at the distal end comprising a second thermal conductor. The lid can include a chemical inlet, a carrier gas inlet, and a chemical outlet. The fill vessel can further include an intermediate layer that is disposed between the base and the lid. The intermediate layer may include an insulator that is configured to reduce heat flow between the base and the lid.

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Abstract: A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

Abstract: Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).