Abstract: An electroplating processor has a vessel holding an electrolyte. An inert anode in the vessel has an anode wire within an anode membrane tube. A head for holds a wafer in contact with the electrolyte in the vessel. The wafer is connected to a cathode. A catholyte replenisher is connected to the vessel. The catholyte replenisher adds metal ions into the catholyte by moving ions of a bulk metal through a catholyte membrane in the catholyte replenisher.

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: An electroplating processor includes a base having a vessel body. A membrane assembly including a membrane housing is attached to a membrane plate. A membrane is provided on a membrane support attached to the membrane housing. An anode assembly includes an anode cup and one or more anodes in the anode cup. An anode plate is attached to the anode cup. Two or more posts on a first side of the anode plate are engageable with post fittings on the membrane plate. Latches on a second side of the anode plate are engageable with and releasable from a latch fitting on the membrane plate. The anode assembly is quickly and easily removable from the processor for maintenance, without disturbing or removing other components of the processor.

Abstract: An electroplating apparatus has a vessel for holding electrolyte. A head has a rotor including a contact ring for holding a wafer having a notch. The contact ring includes a perimeter voltage ring having perimeter contact fingers for contacting the wafer around the perimeter of the wafer, except at the notch. The contact ring also has a notch contact segment having one or more notch contact fingers for contacting the wafer at the notch. The perimeter voltage ring is insulated from the notch contact segment. A negative voltage source is connected to the perimeter voltage ring, and a positive voltage source connected to the notch contact segment. The positive voltage applied at the notch reduces the current crowding effect at the notch. The wafer is plated with a film having more uniform thickness.

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract: A method for processing a wafer includes holding the wafer in a face-up position with a seal ring contacting the wafer on a contact circumference. A bead of liquid is applied onto the entire contact circumference, with the bead of liquid contacting the wafer and the seal ring. The wafer is then inverted into a head-down position, lowered into contact with electrolyte and plated with a conductive film. Formation of the bead of liquid helps to displace air bubbles as the wafer is immersed into the electrolyte which reduces plating defects.

Abstract: An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: In an electroplating process, electric current is applied to two or more electrodes, with the current varying over time according to a multi-variable function. The multi-variable current function is integrated over time, for each electrode, to determine a net plating charge delivered. A plating profile of a plated-on layer of material is compared to a target plating profile. Deviations between the actual plating profile and the target plating profile are identified and used to determine new net plating charges for each electrode. One or more variables of the multi-variable function is changed to provide a new multi-variable function. The new net plating charges are distributed according to the new multi-variable current function, and are used to electroplate a layer of material on a second substrate.

Abstract: An electrochemical processor may include a head having a rotor configured to hold a workpiece, with the head moveable to position the rotor in a vessel. Inner and outer anodes are in inner and outer anolyte chambers within the vessel. An upper cup in the vessel, has a curved upper surface and inner and outer catholyte chambers. A current thief is located adjacent to the curved upper surface. Annular slots in the curved upper curved surface connect into passageways, such as tubes, leading into the outer catholyte chamber. Membranes may separate the inner and outer anolyte chambers from the inner and outer catholyte chambers, respectively.

Abstract: An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

Abstract: An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.

Abstract: In an electro processor for plating semiconductor wafers and similar substrates, a contact ring has a plurality of spaced apart contact fingers. A shield at least partially overlies the contact fingers. The shield changes the electric field around the outer edge of the workpiece and the contact fingers, which reduces or eliminates the negative aspects of using high thief electrode currents and seed layer deplating. The shield may be provided in the form of an annular ring substantially completely overlying and covering, and optionally touching the contact fingers.

Abstract: In an electroplating processor having at least one anode and one thief electrode, reference electrodes are used to measure a voltage gradient in the electrolyte near the edge of the wafer. The voltage gradient is used to calculate the current at the wafer surface using a control volume/current balance technique. The fraction of the total wafer current flowing to the edge region of the wafer is determined and compared to a target value. The processor controller changes at least one of the anode and thief currents to bring the actual edge region current toward the target current.

Abstract: An electro-processing apparatus includes a rotor in a head, and a contact ring assembly on the rotor. The contact ring assembly may have one or more strips of contact fingers on a ring base, with contact fingers clamped into position on the ring base. The strips may have spaced apart projection openings, with the projections on the ring base extending into or through the projection openings. A shield ring may be attached to the ring base, to clamp the contact fingers in place, and/or to provide an electric field shield over at least part of the contact fingers. The contact fingers may be provided as a plurality of adjoining forks, with substantially each fork including at least two contact fingers.

Abstract: A detection fixture is provided with a processor for electroplating a substrate such as a semiconductor wafer, to detect the level of electrolyte in a bowl of the processor. The detected electrolyte level is used in controlling entry of the substrate into the electrolyte, to achieve desired electrolyte wetting characteristics. The processor has a substrate holder supported on a lifter for lowering the substrate holder into the bowl. The detection fixture may emulate a substrate and be held by the substrate holder in the same way that the substrate holder holds a substrate. The lifter lowers the detection fixture until it makes contact with the electrolyte, with the position of the fixture indicative the electrolyte level. The detection fixture is then removed from the processor.

Abstract: In an electroplating process, electric current is applied to two or more electrodes, with the current varying over time according to a multi-variable function. The multi-variable current function is integrated over time, for each electrode, to determine a net plating charge delivered. A plating profile of a plated-on layer of material is compared to a target plating profile. Deviations between the actual plating profile and the target plating profile are identified and used to determine new net plating charges for each electrode. One or more variables of the multi-variable function is changed to provide as new multi-variable function. The new net plating charges are distributed according to the new multi-variable current function, and are used to electroplate a layer of material on a second substrate.

Abstract: An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.