Patents by Inventor Paul Saunier

Paul Saunier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11495515
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 8, 2022
    Assignee: AKASH SYSTEMS, INC.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Publication number: 20220189846
    Abstract: Aspects of diamond growth on semiconductors are described. Some aspects include direct growth of synthetic diamond on wide-bandgap semiconductors without the use of nucleating layers or protective layers. Some aspects include generating synthetic diamond over a gallium nitride surface of a layered structure in accordance with a set of growth parameters that are generated based at least in part on an interface property of an interface generated between the gallium nitride surface and the synthetic diamond. In some aspects, the interface is a single interface between the synthetic diamond and the gallium nitride surface. In some aspects, the synthetic diamond is in contact with the gallium nitride surface. Some aspects include synthetic diamond growth on wide-bandgap semiconductor structures to achieve thermal extraction without introducing electrically conductive regions in the semiconductor structure. Such aspects may include generating less than optimal quality synthetic diamond.
    Type: Application
    Filed: December 20, 2021
    Publication date: June 16, 2022
    Inventors: Daniel FRANCIS, Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
  • Publication number: 20210242106
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: September 15, 2020
    Publication date: August 5, 2021
    Inventors: Felix EJECKAM, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20210234511
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: September 8, 2020
    Publication date: July 29, 2021
    Inventors: Felix EJECKAM, Tyrone D. MITCHELL, JR., Paul SAUNIER
  • Patent number: 10985082
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: April 20, 2021
    Assignee: Akash Systems, Inc.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Publication number: 20200402973
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
  • Publication number: 20200402974
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
  • Patent number: 10811335
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: October 20, 2020
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
  • Patent number: 10804853
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: October 13, 2020
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, Jr., Paul Saunier
  • Publication number: 20200044608
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: June 18, 2019
    Publication date: February 6, 2020
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20200006189
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: May 6, 2019
    Publication date: January 2, 2020
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Patent number: 10374553
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: August 6, 2019
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
  • Patent number: 10332820
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: June 25, 2019
    Assignee: Akash Systems, Inc.
    Inventors: Felix Ejeckam, Tyrone D Mitchell, Jr., Paul Saunier
  • Publication number: 20180367100
    Abstract: An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 20, 2018
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Publication number: 20180269130
    Abstract: A high efficiency satellite transmitter comprises an RF amplifier chip in thermal contact with a radiant cooling element via a heat conducting element. The RF amplifier chip comprises an active layer disposed on a high thermal conductivity substrate having a thermal conductivity greater than about 1000 W/mK, maximizing heat conduction out of the RF amplifier chip and ultimately into outer space when the chip is operating within a satellite under normal transmission conditions. In one embodiment, the active layer comprises materials selected from the group consisting of GaN, InGaN, AlGaN, and InGaAlN alloys. In one embodiment, the high thermal conductivity substrate comprises synthetic diamond.
    Type: Application
    Filed: March 20, 2017
    Publication date: September 20, 2018
    Inventors: Felix Ejeckam, Tyrone D. Mitchell, JR., Paul Saunier
  • Patent number: 9202905
    Abstract: Embodiments include apparatuses and methods related to an HFET. In embodiments, one or all of the buffer layer, the back-barrier layer, or the barrier layer may be formed of a digital alloy. In embodiments, the digital alloy may include alternating layers of alloys of aluminum, gallium, and nitrogen. Other embodiments may be disclosed or claimed herein.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: December 1, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Jinqiao Xie, Edward A. Beam, III, Ming-Yih Kao, Hua-Quen Tserng, Paul Saunier
  • Patent number: 9054167
    Abstract: Embodiments of the present disclosure describe structural configurations of an integrated circuit (IC) device such as a high electron mobility transistor (HEMT) switch device and method of fabrication. The IC device includes a buffer layer formed on a substrate, a channel layer formed on the buffer layer to provide a pathway for current flow in a transistor device, a spacer layer formed on the channel layer, a barrier layer formed on the spacer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) or gallium (Ga), a gate dielectric directly coupled with the spacer layer or the channel layer, and a gate formed on the gate dielectric, the gate being directly coupled with the gate dielectric. Other embodiments may also be described and/or claimed.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: June 9, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventor: Paul Saunier
  • Patent number: 9029914
    Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N). The IC device may further include a gate terminal and a gate dielectric layer disposed between the gate terminal and the barrier layer and/or between the gate terminal and the buffer layer. In various embodiments, the gate dielectric layer may include a fluoride- or chloride-based compound, such as calcium fluoride (CaF2).
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: May 12, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Edward A. Beam, III, Paul Saunier
  • Patent number: 8975664
    Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: March 10, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Paul A. Saunier, Edward A. Beam, III
  • Publication number: 20140001478
    Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: June 27, 2012
    Publication date: January 2, 2014
    Applicant: TRIQUINT SEMICONDUCTOR, INC.
    Inventors: Paul Saunier, Edward A. Beam, III