Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), a regrown structure disposed in and epitaxially coupled with the barrier layer, the regrown structure including nitrogen (N) and at least one of aluminum (Al) or gallium (Ga) and being epitaxially deposited at a temperature less than or equal to 600° C., and a gate terminal disposed in the barrier layer, wherein the regrown structure is disposed between the gate terminal and the buffer layer. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure describe structural configurations of an integrated circuit (IC) device such as a high electron mobility transistor (HEMT) switch device and method of fabrication. The IC device includes a buffer layer formed on a substrate, a channel layer formed on the buffer layer to provide a pathway for current flow in a transistor device, a spacer layer formed on the channel layer, a barrier layer formed on the spacer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) or gallium (Ga), a gate dielectric directly coupled with the spacer layer or the channel layer, and a gate formed on the gate dielectric, the gate being directly coupled with the gate dielectric. Other embodiments may also be described and/or claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), wherein the barrier layer includes an oxidized portion of the barrier layer, a gate dielectric disposed on the oxidized portion of the barrier layer, and a gate electrode disposed on the gate dielectric, wherein the oxidized portion of the barrier layer is disposed in a gate region between the gate electrode and the buffer layer.

Abstract: Embodiments of the present disclosure describe structural configurations of an integrated circuit (IC) device such as a high electron mobility transistor (HEMT) switch device and method of fabrication. The IC device includes a buffer layer formed on a substrate, a channel layer formed on the buffer layer to provide a pathway for current flow in a transistor device, a spacer layer formed on the channel layer, a barrier layer formed on the spacer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) or gallium (Ga), a gate dielectric directly coupled with the spacer layer or the channel layer, and a gate formed on the gate dielectric, the gate being directly coupled with the gate dielectric. Other embodiments may also be described and/or claimed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device such as, for example, a high electron mobility transistor (HEMT) or metal-insulator-semiconductor field-effect transistor (MISFET), or combinations thereof. The IC device includes a buffer layer formed on a substrate, a barrier layer formed on the buffer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) and gallium (Ga), a cap layer formed on the barrier layer, the cap layer including nitrogen (N) and at least one of indium (In) and gallium (Ga), and a gate formed on the cap layer, the gate being directly coupled with the cap layer. Other embodiments may also be described and/or claimed.

Abstract: Systems, methods and devices are provided for transforming data from an input format to an output format on a computing device including an electronic circuit. The methods include receiving, by the electronic circuit, from an input device, an input data record including data in the input format, transforming the data into an output data record format, and outputting an output data record. Additionally, the components of the input data record may be determined using a positional input interface definition including a sample record comprising a input key in each position. Each component is matched to the input key for its position. Components are matched to corresponding components of each position of the output data record, using a positional output interface definition, with the output interface definition including an output key for each record position.

Abstract: Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active layer over a first substrate in a manner such that a frontside of the active layer faces the first substrate and a backside of the active layer faces away from the first substrate, forming a second substrate over the backside of the active layer, and removing the first substrate to expose the frontside of the active layer. Other embodiments are described and claimed.

Abstract: Disclosed embodiments include a high electron mobility transistor (HEMT) with an indium gallium nitride layer set as one of a plurality of barrier sublayers and methods for forming such a HEMT. Other embodiments are also be described and claimed.

Abstract: Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed.

Abstract: A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain electrode connected to an output drain transmission line with the source electrode connected to a point of reference potential. The input and output transmission lines are terminated with terminating impedances which are not matched to the gate and drain transmission lines. The use of Gallium Nitride enables the terminating impedance to be at much higher levels than in the prior art. The use of Gallium Nitride permits multiple devices to be employed, thus resulting in higher gain amplifiers with higher voltage operation and higher frequency operation. A cascode traveling wave amplifier employing GaN FETs is also described having high gain and bandwidth.

Abstract: A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain electrode connected to an output drain transmission line with the source electrode connected to a point of reference potential. The input and output transmission lines are terminated with terminating impedances which are not matched to the gate and drain transmission lines. The use of Gallium Nitride enables the terminating impedance to be at much higher levels than in the prior art. The use of Gallium Nitride permits multiple devices to be employed, thus resulting in higher gain amplifiers with higher voltage operation and higher frequency operation. A cascode traveling wave amplifier employing GaN FETs is also described having high gain and bandwidth.

Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.

Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.

Abstract: Generally, and in one form of the invention, an integrated circuit is disclosed for providing low-noise and high-power microwave operation comprising: an epitaxial material structure comprising a substrate 10, a low-noise channel layer 14, a low-noise buffer layer 16, a power channel layer 18, and a moderately doped wide bandgap layer 20; a first active region 24 comprising a first source contact 32 above the wide bandgap layer 22, a first drain contact 36 above the wide bandgap layer 22, wherein the first source contact 32 and the first drain contact 36 are alloyed and thereby driven into the material structure to make contact with the low-noise channel layer 14, and a first gate contact 28 to the low-noise buffer layer 16; and a second active region 26 comprising a second source contact 34 above the wide bandgap layer 22, a second drain contact 38 above the wide bandgap layer 22, wherein the second source contact 34 and the second drain contact 38 are alloyed and thereby driven into the material structure t

Abstract: A flip-chip integrated circuit having passive 302, 304, 306 as well as active 308, 310 components on a frontside surface of a substrate. The active device have airbridges which contact a heatsink to provide heat dissipation from the junctions of the devices.

Abstract: Generally, and in one form of the invention, an integrated circuit is disclosed for providing low-noise and high-power microwave operation comprising: an epitaxial material structure comprising a substrate 10, a low-noise channel layer 14, a low-noise buffer layer 16, a power channel layer 18, and a moderately doped wide bandgap layer 20; a first active region 24 comprising a first source contact 32 above the wide bandgap layer 22, a first drain contact 36 above the wide bandgap layer 22, wherein the first source contact 32 and the first drain contact 36 are alloyed and thereby driven into the material structure to make contact with the low-noise channel layer 14, and a first gate contact 28 to the low-noise buffer layer 16; and a second active region 26 comprising a second source contact 34 above the wide bandgap layer 22, a second drain contact 38 above the wide bandgap layer 22, wherein the second source contact 34 and the second drain contact 38 are alloyed and thereby driven into the material structure t

Abstract: A flip-chip integrated circuit having passive 302, 304, 306 as well as active 308, 310 components on a frontside surface of a substrate. The active devices have airbridges which contact a heatsink to provide heat dissipation from the junctions of the devices.

Abstract: A flip-chip integrated circuit having passive 302, 304, 306 as well as active 308, 310 components on a frontside surface of a substrate. The active devices have airbridges which contact a heatsink to provide heat dissipation from the junctions of the devices.