Abstract: A multi-layer reflective structure is disposed over the substrate. An amorphous capping layer is disposed over the multi-layer reflective structure. The amorphous capping layer may contain ruthenium, oxygen, niobium, nitrogen, tantalum, or zirconium. An amorphous layer may also be disposed between the multi-layer reflective structure and the amorphous capping layer. The amorphous layer includes amorphous silicon, amorphous silicon oxide, or amorphous silicon nitride.

Abstract: An isolation coupling structure for transmitting a feedback signal between a secondary side and a primary side of a voltage conversion device includes a first dielectric layer including a first face and a second face opposite to the first face, a first coupling coil disposed on the first face enclosing to form an inner region; a second coupling coil configured to couple with the first coupling coil. The second coupling coil includes a first coil portion and a second coil portion, where the first coil portion is disposed on the second face, the second coil portion is disposed on the first face and located inside the inner region. The second coil portion is isolated from the first coupling coil, and the first coil portion and the second coil portion are electrically connected. The technical effect is that it can realize the electrical isolation and the coupling with low cost and small package size.

Abstract: The invention provides a projection device which includes a rotating module and an imaging module. The rotating module is assembled on a mounting surface and includes a rotating part and an assembling part which are integrally formed. The rotating part is parallel to the mounting surface, and the assembling part is perpendicular to the mounting surface. The imaging module is assembled on the assembling part of the rotating module. When the rotating module rotates by taking an axis perpendicular to the mounting surface as an axial center, the rotating module drives the imaging module to rotate so as to change a projection direction of the imaging module. The projection device of the invention adjusts the projection direction without using a tool.

Abstract: The present disclosure provides a semiconductor die structure with air gaps for reducing capacitive coupling between conductive features and a method for preparing the semiconductor die structure. The semiconductor die structure includes a substrate; a first supporting backbone disposed on the substrate; a second supporting backbone disposed on the substrate; a first conductor block disposed on the first supporting backbone; a second conductor block disposed on the second supporting backbone; a third conductor block disposed above the substrate and connected to the first conductor block and the second conductor block; and an air gap structure disposed between the first conductor block, the second conductor block, and the third conductor block, wherein the air gap structure comprises an air gap and a liner layer enclosing the air gap.

Abstract: A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.

Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: A voltage converter comprises a second controller as a power switch of the secondary side of the transformer for comparing a detection voltage representing an output voltage and/or load current with a first reference voltage and generating a control signal, and a coupling element for transmitting the control signal generated by the second controller to the first controller on the primary side of the transformer enabling the first controller to generate a first pulse signal driving the power switch to control the on/off state of the primary side winding.

Abstract: A photo mask for extreme ultra violet (EUV) lithography includes a substrate having a front surface and a back surface opposite to the front surface, a multilayer Mo/Si stack disposed on the front surface of the substrate, a capping layer disposed on the multilayer Mo/Si stack, an absorber layer disposed on the capping layer, and a backside conductive layer disposed on the back surface of the substrate. The backside conductive layer is made of tantalum boride.

Abstract: The present disclosure provides an image processing method, including: recognizing a source object in a source image, and determining, according to feature points of the source object, an orientation and a size of the source object; adjusting, according to matching relationships between the orientation and the size of the source object and the orientation and the size of the target object, the orientation and the size of the source object; adjusting a shape of the source object and a shape of the target object according to an average shape of the source object and an average shape of the target object; and fusing, in real time, the source image and the target image in a manner of aligning the shape of the source object with the shape of the target object.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: When a constant on-time flyback converter is in the switch-on stage, the gate voltage of the switch and the input voltage of the flyback converter adopt the primary side of the transformer to control. The gate voltage is controlled by the second control signal generated by the controller. The flyback converter is then turn off to enter the switch off stage. When the flyback converter is in the switch off stage, the secondary side controller on the secondary side of the transformer, based on the output voltage and output current of the secondary side, sends a first control signal to the primary side controller to control the main switch to turn on. Thus, the flyback converter enters the switch-on stage. Therefore, the calculation complexity is reduced, and there is no need to set a blanking time, such that the flyback converter can be used in high switching frequency applications.

Abstract: A flyback converter to control conduction time in AC/DC conversion technology. The flyback converter includes a primary side and a secondary side. The primary side includes a main switch connecting a primary coil to the input of the flyback converter in series. The secondary side includes a secondary coil coupling with the output terminal of the flyback converter. When a switching frequency of the main switch is at a preset first on time in the range between the off frequency and the second switching frequency, the on-time of the main switch continuously changes corresponding to output load changes. When the switching frequency of the main switch is higher than the first switching frequency, the on time of the main switch is constant. The on time is controlled to change linearly, so as to avoid excessive changes in the output voltage ripples, thereby improving circuit efficiency.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

Abstract: A multi-port power delivery system includes a first universal serial bus (USB) port, a second USB port, a first power conversion unit, a second power conversion unit, a power delivery control circuit and a switch circuit. The first USB port is configured to output power delivered to a first power path. The second USB port is configured to output power delivered to a second power path. The first power conversion unit has a first output terminal coupled to the first power path. The second power conversion unit has a second output terminal coupled to the second power path. The power delivery control circuit generates a switch control signal according to first connection information on the first USB port and second connection information on the second USB port. The switch circuit selectively couples the first output terminal to the second output terminal according to the switch control signal.

Abstract: An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.

Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.

Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.

Abstract: An optical module and a projector having the optical module are provided. The optical module includes a bracket, a driving component, an optical component, and a light guide element. The optical component is movably disposed on the bracket and is located on a transmission path of an image beam. The driving component is disposed between the bracket and the optical component and is configured to drive the optical component to oscillate. The light guide element is disposed at the bracket and located on the transmission path of the image beam. Here, the assembly of the optical module and the projector is easy, and the assembly yield is high.

Abstract: The present disclosure discloses an image processing method, including: recognizing basic feature points of a source object in a source image and basic feature points of a base object in a base image; determining, according to distribution of the basic feature points in each of the images, auxiliary feature points that meet a filling condition according to the distribution in a corresponding image; determining feature points of a same type in the source object and the base object, the feature points of the same type including basic feature points of a same type and auxiliary feature points of a same type in the source object and the base object; determining average feature points according to positions of the feature points of the same type; deforming the source object and the base object according to the average feature points; and fusing the deformed source object with the deformed base object. The present disclosure further discloses an image processing apparatus, a terminal, and a storage medium.