Abstract: Disclosed herein are related to a system and a method of extending a lifetime of a memory cell. In one aspect, a memory controller applies a first pulse having a first amplitude to the memory cell to write input data to the memory cell. In one aspect, the memory controller applies a second pulse having a second amplitude larger than the first amplitude to the memory cell to extend a lifetime of the memory cell. The memory cell may include a resistive memory device or a phase change random access memory device. In one aspect, the memory controller applies the second pulse to the memory cell to repair the memory cell in response to determining that the memory cell has failed. In one aspect, the memory controller periodically applies the second pulse to the memory cell to extend the lifetime of the memory cell before the memory cell fails.

Abstract: A memory device is provided, including a memory array, a driver circuit, and recover circuit. The memory array includes multiple memory cells. Each memory cell is coupled to a control line, a data line, and a source line and, during a normal operation, is configured to receive first and second voltage signals. The driver circuit is configured to output at least one of the first voltage signal or the second voltage signal to the memory cells. The recover circuit is configured to output, during a recover operation, a third voltage signal, through the driver circuit to at least one of the memory cells. The third voltage signal is configured to have a first voltage level that is higher than a highest level of the first voltage signal or the second voltage signal, or lower than a lowest level of the first voltage signal or the second voltage signal.

Abstract: An article of footwear includes a heel cup that is attached to the upper and extends from the sole structure to at least a portion of the rear heel collar of the upper. The heel cup may be uniformly molded with an upper portion, midportion, and lower portion and the upper portion has a smaller mediolateral length than the midportion, and the midportion and lower portion form a concave structure that receives the heel. The upper portion has a first configuration and is capable of distorting into a second configuration under a load of a user's foot when the user is donning the footwear. In the second configuration, at least part of the upper portion is lowered and is capable of returning to the first configuration after the load of the user's foot is removed. The midportion includes a peripheral portion that may be thicker than a central portion.

Abstract: An article of footwear includes an upper and a U-shaped foamed ankle collar. The ankle collar may form the topmost region of the foot receiving shoe opening and the foamed ankle collar may extend at least partially around and over a foot receiving shoe opening. The ankle collar is capable of being compressed by the user's heel during foot insertion and the ankle collar may exert pressure on the user's ankle once the foot is inserted. The ankle collar may have a flattened region along its length forming a downward angle from the topmost region toward the front of the article of footwear. The ankle collar may be located along at least a portion of an inner surface of a heel cup and the heel cup may have a shoe-horn like configuration. The ankle collar may reduce the dimensions of the shoe opening when not compressed.

Abstract: An article of footwear includes a heel counter support situated on the upper and above the sole structure. The heel counter support may have at least two hollow receptacles with backward angles, a compressible component having two ends, and each one of the two hollow receptacles receives one end of the compressible component. The compressible component may have a first configuration and may be capable of distorting into a second configuration under a load of a user's foot when the user is donning the footwear. The compressible component may be capable of automatically returning to the first configuration after the user's foot in fully inserted into the footwear.

Abstract: An acoustic device includes a plurality of bulk acoustic resonance structures. Each of the bulk acoustic resonance structures includes a substrate. The bulk acoustic resonance structure further includes a reflective structure, a first electrode layer, a piezoelectric layer and a second electrode layer stacked on the substrate in sequence. The bulk acoustic resonance structure further includes multiple protruding blocks located on the piezoelectric layer and circumferentially arranged around the second electrode layer, wherein the multiple protruding blocks have a preset distance from the second electrode layer, and the preset distance depends on a connection manner between the bulk acoustic resonance structure and other ones of multiple bulk acoustic resonance structures.

Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.

Abstract: Disclosed herein are related to a system and a method of extending a lifetime of a memory cell. In one aspect, a memory controller applies a first pulse having a first amplitude to the memory cell to write input data to the memory cell. In one aspect, the memory controller applies a second pulse having a second amplitude larger than the first amplitude to the memory cell to extend a lifetime of the memory cell. The memory cell may include a resistive memory device or a phase change random access memory device. In one aspect, the memory controller applies the second pulse to the memory cell to repair the memory cell in response to determining that the memory cell has failed. In one aspect, the memory controller periodically applies the second pulse to the memory cell to extend the lifetime of the memory cell before the memory cell fails.

Abstract: The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

Abstract: An acoustic wave device includes a substrate, as well as a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially arranged on the substrate. The device further includes a protective layer. The protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer. The first position is a position, corresponding to a first overlapping region, above the second electrode layer. The first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped. A fabrication method for an acoustic wave device is also provided.

Abstract: An acoustic wave device includes a substrate, as well as a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially arranged on the substrate. The device further includes a protective layer. The protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer. The first position is a position, corresponding to a first overlapping region, above the second electrode layer. The first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped. A fabrication method for an acoustic wave device is also provided.

Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a substrate, a packaging component provided on the substrate and a MEMS component provided inside the packaging component and on the substrate. The device further includes a sealing component. The sealing component is provided on the substrate and/or the packaging component, for preventing an external small molecule from contacting with the MEMS component.

Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a substrate, a packaging component provided on the substrate and a MEMS component provided inside the packaging component and on the substrate. The device further includes a sealing component. The sealing component is provided on the substrate and/or the packaging component, for preventing an external small molecule from contacting with the MEMS component.

Abstract: The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

Abstract: A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial area on the acoustic wave device; forming a sacrificial layer on the sacrificial area; covering a metal covering layer on the sacrificial layer and connecting a bottom rim of the metal covering layer to the acoustic wave device and forming an opening between the bottom rim of the metal covering layer and the acoustic wave device; and removing the sacrificial layer to form a cavity between the metal covering layer and the resonant area by using a chemical solution, wherein the chemical solution enters from the opening between the metal covering layer and the acoustic wave device.

Abstract: A method for controlling a display panel includes steps of: providing a display panel, where the display panel includes a plurality of pixels arranged into a plurality of columns and rows and a plurality of data lines, where one of the data lines is coupled to pixels arranged in odd number rows of one of two columns which are adjacent to the one of the data lines, and coupled to pixels arranged in even number rows of the other one of two columns which are adjacent to the one of the data lines; receiving the data signals in a driving manner of column inversion by the data lines during a display period; and receiving the data signals in a driving manner of N-dot inversion by the data lines during a blanking period.

Abstract: A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.

Abstract: A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed on at least one of the first surface and the second surface and connected with the other. At least one protection ring is formed on at least one of the first surface and the second surface and having a first gap with the other. At least one electrical device is formed on at least one of the first surface and the second surface and is located inside at least one of the at least one protection ring, wherein the at least one electrical device includes a temperature sensor.

Abstract: A method for controlling a display panel includes steps of: providing a display panel, where the display panel includes a plurality of pixels arranged into a plurality of columns and rows and a plurality of data lines, where one of the data lines is coupled to pixels arranged in odd number rows of one of two columns which are adjacent to the one of the data lines, and coupled to pixels arranged in even number rows of the other one of two columns which are adjacent to the one of the data lines; receiving the data signals in a driving manner of column inversion by the data lines during a display period; and receiving the data signals in a driving manner of N-dot inversion by the data lines during a blanking period.

Abstract: An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate including an epitaxial structure formed on a compound semiconductor substrate, a power amplifier upper structure formed on a top-side of a left part of the compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on the top-side of a right part of the compound semiconductor epitaxial substrate; wherein the left part of the compound semiconductor epitaxial substrate and the power amplifier upper structure form a power amplifier; the right part of the compound semiconductor epitaxial substrate and the film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device.