Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure also includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure further includes a conductive structure accessibly arranged through the trench of the protection layer and electrically connected to the conductive pad. The conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer.

Abstract: A handheld apparatus, a control method thereof of a presenting mode and a computer-readable recording medium are provided. The handheld apparatus includes at least one first sensor, a second sensor, a screen and a processor. The first sensor is disposed on the handheld apparatus. The second sensor detects orientation. The handheld apparatus has an auto-rotate screen function of automatically adjusting a presenting mode of the screen to a portrait mode or a landscape mode according to the orientation. The processor determines whether the handheld apparatus is in a hold state according to sensing data of the first sensor. In response to determining that the handheld apparatus is in the hold state, the processor locks the presenting mode according to the presenting mode currently performed by the handheld apparatus without adjusting the presenting mode according to the auto-rotate screen function. Accordingly, a convenient operation of the presenting mode is provided.

Abstract: An image processing method, suitable for a mobile device including a camera unit and a display unit, includes separating a foreground portion and a background portion of a first image sensed by the camera unit, calculating a dimension of the foreground portion, generating an adjustment level in positively correlated with the dimension, applying an image effect at the adjustment level to the foreground or the background portion of the first image to generate a second image, and displaying the second image on the display unit.

Abstract: A calibration method and a computer readable recording medium are provided. The calibration method is applied to an electronic device of an electronic system. The electronic system includes the electronic device and a broadcasting device. The calibration method comprises: obtaining device information of the broadcasting device to determine a type of the broadcasting device; providing a user interaction interface, and obtaining an interactive operation via the user interaction interface; generating a calibration command corresponding to the broadcasting device according to the interactive operation; and calibrating a broadcasting setting of the broadcasting device according to the calibration command.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A calibration method and a computer readable recording medium are provided. The calibration method is applied to an electronic device of an electronic system. The electronic system includes the electronic device and a broadcasting device. The calibration method comprises: obtaining device information of the broadcasting device to determine a type of the broadcasting device; providing a user interaction interface, and obtaining an interactive operation via the user interaction interface; generating a calibration command corresponding to the broadcasting device according to the interactive operation; and calibrating a broadcasting setting of the broadcasting device according to the calibration command.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure also includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure further includes a conductive structure accessibly arranged through the trench of the protection layer and electrically connected to the conductive pad. The conductive structure has a curved top surface that defines an apex, and an apex of the curved top surface is higher than a top surface of the protection layer.

Abstract: An embodiment ladder bump structure includes an under bump metallurgy (UBM) feature supported by a substrate, a copper pillar mounted on the UBM feature, the copper pillar having a tapering curved profile, which has a larger bottom critical dimension (CD) than a top critical dimension (CD) in an embodiment, a metal cap mounted on the copper pillar, and a solder feature mounted on the metal cap.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of bond-on-trace connections, and a second function chip on top of the first function chip, directly connected to the substrate. Another package-on-package (PoP) comprises: a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of solder mask defined (SMD) connections formed on SMD bonding pads connected to solder bumps, and a second function chip on top of the first function chip, directly connected to the substrate by a plurality of bond-on-trace connections.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: The disclosure provides a backlight module and a display device with a backlight module. The backlight module includes an emitting element, phosphors, and a quantum dot film. The emitting element is configured to provide lights with a first primary color. The phosphors have a second primary color. The quantum dot film includes numbers of quantum dots configured to provide emission spectrum with a third primary color. The light from the emitting element excites the phosphors and the quantum dot film to generate white mixed light. The first primary color is blue, and the maximum peak intensity the light from the emitting element is in the range from 460 nm to 475 nm.

Abstract: The disclosure provides a backlight module and a display device with a backlight module. The backlight module includes an emitting element, phosphors, and a quantum dot film. The emitting element is configured to provide lights with a first primary color. The phosphors have a second primary color. The quantum dot film includes numbers of quantum dots configured to provide emission spectrum with a third primary color. The light from the emitting element excites the phosphors and the quantum dot film to generate white mixed light.

Abstract: A display device is provided. The display device includes a display panel and a backlight module. The backlight module is emits light to the display panel. the light emitted from the backlight module includes blue light having a peak wavelength not less than 455. The display device can reduce harmful to eyes of people.

Abstract: A device is provided. The device may comprise an integrated circuit package. The integrated circuit package may comprise a first layer and a solder mask. The first layer may comprise a top surface wherein the solder mask is disposed on the top surface of the first layer. The solder mask may comprise a vertical edge. The vertical edge may form an angle between the top surface of the first layer and the vertical edge of not less than 90 degrees. The angle may be not less than 120 degrees or not less than 150 degrees.

Abstract: A structure comprises a substrate comprising a plurality of traces on top of the substrate, a plurality of connectors formed on a top surface of a semiconductor die, wherein the semiconductor die is formed on the substrate and coupled to the substrate through the plurality of connectors and a dummy metal structure formed at a corner of a top surface of the substrate, wherein the dummy metal structure has two discontinuous sections.