Abstract: A shielding device is suitable for applying in an electronic module arranged on a mainboard of an electronic device having a housing baseboard. The mainboard is provided with a connector. The shielding device includes a fixing frame and a shielding cover. The fixing frame is provided with an accommodating space suitable for accommodating the connector and the electronic module. The fixing frame includes two first side walls, two second side walls, and a press plate connecting to one of the two first side walls and covering the connector. A part of the press plate is covered by the housing baseboard. The shielding cover is pivotally connected to one side, away from the press plate, of the fixing frame and may be opened or closed relative to the fixing frame. The electronic module is exposed through opening of the shielding cover and is shielded through closing of the shielding cover.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip comprising a gate electrode disposed on a substrate between a pair of source/drain regions. A dielectric layer is over the substrate. A field plate is disposed on the dielectric layer and laterally between the gate electrode and a first source/drain region in the pair of source/drain regions. The field plate comprises a first field plate layer and a second field plate layer. The second field plate layer extends along sidewalls and a bottom surface of the first field plate layer. The first and second field plate layers comprise a conductive material.

Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.

Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.

Abstract: A method includes: forming a barrier layer in a substrate; depositing a first dielectric layer over the substrate; forming a patterned mask layer over the first dielectric layer; patterning the first dielectric layer into a first sublayer of a gate dielectric layer; converting at least part of the patterned mask layer into a second sublayer of the gate dielectric layer; depositing a second dielectric layer adjacent to the first and second sublayers to serve as a third sublayer of the gate dielectric layer; and depositing a gate electrode over the gate dielectric layer.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.

Abstract: A method for making a semiconductor device includes forming a ROX layer on a substrate and a patterned silicon oxynitride layer on the patterned ROX layer; conformally forming a dielectric oxide layer to cover the substrate, the patterned silicon oxynitride layer, and the patterned ROX layer; and fully oxidizing the patterned silicon oxynitride layer to form a fully oxidized gate oxide layer on the substrate.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip comprising a gate electrode disposed on a substrate between a pair of source/drain regions. A dielectric layer is over the substrate. A field plate is disposed on the dielectric layer and laterally between the gate electrode and a first source/drain region in the pair of source/drain regions. The field plate comprises a first field plate layer and a second field plate layer. The second field plate layer extends along sidewalls and a bottom surface of the first field plate layer. The first and second field plate layers comprise a conductive material.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a source region and a drain region within a substrate. A drift region is formed within the substrate such that the drift region is disposed laterally between the source region and the drain region. A first gate structure is formed over the drift region. An inter-level dielectric (ILD) layer is formed over the first gate structure. The ILD layers is patterned to define a field plate opening. A first field plate layer, a second field plate layer, and a third field plate layer are formed within the field plate opening.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a gate structure over a substrate and between a source region and a drain region. A composite etch stop structure is formed over the gate structure and a first inter-level dielectric (ILD) layer is formed over the composite etch stop structure. The composite etch stop structure has a plurality of stacked dielectric materials. The first ILD layer is etched to concurrently define contact openings extending to the substrate and a field plate opening extending to the composite etch stop structure. The contact openings and the field plate opening are concurrently filled with one or more conductive materials.

Abstract: The present disclosure describes a semiconductor structure that includes a channel region, a source region adjacent to the channel region, a drain region, a drift region adjacent to the drain region, and a dual gate structure. The dual gate structure includes a first gate structure over portions of the channel region and portions of the drift region. The dual gate structure also includes a second gate structure over the drift region.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a gate structure disposed over a substrate between a source region and a drain region. A first inter-level dielectric (ILD) layer is disposed over the substrate and the gate structure and a second ILD layer is disposed over the first ILD layer. A field plate etch stop structure is between the first ILD layer and the second ILD layer. A field plate extends from an uppermost surface of the second ILD layer to the field plate etch stop structure. A plurality of conductive contacts extend from the uppermost surface of the second ILD layer to the source region and the drain region.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a source region and a drain region within a substrate. A gate structure is formed over the substrate and between the source region and the drain region. One or more dielectric layers are formed over the gate structure, and a first inter-level dielectric (ILD) layer is formed over the one or more dielectric layers. The first ILD layer laterally surrounds the gate structure. The first ILD layer is etched to define contact openings and a field plate opening. The contact openings and the field plate opening are filled with a conductive material.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a source region and a drain region within a substrate. A drift region is formed within the substrate such that the drift region is disposed laterally between the source region and the drain region. A first gate structure is formed over the drift region. An inter-level dielectric (ILD) layer is formed over the first gate structure. The ILD layers is patterned to define a field plate opening. A first field plate layer, a second field plate layer, and a third field plate layer are formed within the field plate opening.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate disposed over a drift region. A first gate electrode overlies a substrate between a source region and a drain region. An etch stop layer laterally extends from an outer sidewall of the first gate electrode to the drain region. The etch stop layer overlies the drift region disposed between the source region and the drain region. A field plate is disposed within a first inter-level dielectric (ILD) layer overlying the substrate. The field plate overlies the drift region. A top surface of the field plate is aligned with a top surface of the first gate electrode and a bottom surface of the field plate is vertically above a bottom surface of the first gate electrode. The field plate and first gate electrode respectively include metal materials.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate disposed over a drift region. A first gate electrode overlies a substrate between a source region and a drain region. An etch stop layer laterally extends from an outer sidewall of the first gate electrode to the drain region. The etch stop layer overlies the drift region disposed between the source region and the drain region. A field plate is disposed within a first inter-level dielectric (ILD) layer overlying the substrate. The field plate overlies the drift region. A top surface of the field plate is aligned with a top surface of the first gate electrode and a bottom surface of the field plate is vertically above a bottom surface of the first gate electrode. The field plate and first gate electrode respectively include metal materials.