Abstract: The present disclosure relates to a transistor device having a field plate, and a method of formation. In some embodiments, the transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers laterally extend from over the gate electrode to a location between the gate electrode and the drain region. A field plate is located within an inter-level dielectric (ILD) layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the location and vertically extends from the one or more dielectric layers to a top surface of the ILD layer. A conductive contact is arranged over the drain region and is surrounded by the ILD layer. The conductive contact extends to the top surface of the ILD layer.

Abstract: In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.

Abstract: In some embodiments, a semiconductor device includes a first well region configured to be an anode of the semiconductor device, a first doped region configured to be a cathode of the semiconductor device, a second doped region configured to be another cathode of the semiconductor device, and a conductive region. The first well region is disposed between the first doped region and the second doped region, and is configured for electrical connection of the conductive region.

Abstract: The present disclosure relates to a high voltage transistor device having a field plate, and a method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed over a substrate between a source region and a drain region located within the substrate. A dielectric layer laterally extends from over the gate electrode to a drift region arranged between the gate electrode and the drain region. A field plate is located within a first inter-level dielectric layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the drift region and vertically extends from the dielectric layer to a top surface of the first ILD layer. A plurality of metal contacts, having a same material as the field plate, vertically extend from a bottom surface of the first ILD layer to a top surface of the first ILD layer.

Abstract: A composite connection socket includes a metal housing, an insulative main body, a first row conductive terminal and a second row conductive terminal. The metal housing includes an accommodating space formed therein, and the insulative main body is received inside the accommodating space. The insulative main body includes a first side plate, a second side plate and a base; the first side plate and the second side plate are arranged corresponding to each other and protrude from the base. The first row conductive terminal is arranged on the first side plate and complies with a micro USB communication protocol interface. The second row conductive terminal is arranged on the second side plate and complies with a lightning standard interface. The composite connection socket is able to commonly accommodate two cable connectors of different standards of a micro USB connector or a lightning connector inserted therein.

Abstract: A socket outlet includes a main module and an expansion module. An expansion socket formed with a through hole, an inner annual groove, and an outer annual groove is disposed on the main module. Three electrodes are disposed on the expansion socket, respectively extended into the through hole, the inner annual groove, and the outer annual groove. An expansion plug including a conductive pin, an inner conductive ring, and an outer conductive ring is disposed on the expansion module. The expansion plug is plugged in the expansion socket, the conductive pin is plugged in the through hole, the inner conductive ring is plugged in the inner annual groove, and the outer conductive ring is plugged in the outer annual groove. The expansion module is connected to the main module by plugging the expansion plug into the expansion socket. The expansion module and the main module can be relatively rotated.

Abstract: A rechargeable battery includes a battery body and a connector plug. The battery body has a recess, a circuit board and a cell. The circuit board is electrically connected to the battery cell. The connector plug is pivotally connected to the battery body and electrically connected to the circuit board. The connector plug is foldable to be received in the recess. Accordingly, the connector plug is pivotally connected to the battery body and is foldable to be received in the recess, so the battery body can be charged by means of the connector plug connected to an external power supply, thereby improving convenience in using the rechargeable battery.

Abstract: The present disclosure relates to a high voltage transistor device having a field plate, and a method of formation. In some embodiments, the high voltage transistor device has a gate electrode disposed over a substrate between a source region and a drain region located within the substrate. A dielectric layer laterally extends from over the gate electrode to a drift region arranged between the gate electrode and the drain region. A field plate is located within a first inter-level dielectric layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the drift region and vertically extends from the dielectric layer to a top surface of the first ILD layer. A plurality of metal contacts, having a same material as the field plate, vertically extend from a bottom surface of the first ILD layer to a top surface of the first ILD layer.