Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a field plate disposed over a drift region. A first gate electrode overlies a substrate between a source region and a drain region. An etch stop layer laterally extends from an outer sidewall of the first gate electrode to the drain region. The etch stop layer overlies the drift region disposed between the source region and the drain region. A field plate is disposed within a first inter-level dielectric (ILD) layer overlying the substrate. The field plate overlies the drift region. A top surface of the field plate is aligned with a top surface of the first gate electrode and a bottom surface of the field plate is vertically above a bottom surface of the first gate electrode. The field plate and first gate electrode respectively include metal materials.

Abstract: The present disclosure relates to an integrated chip. In some embodiments, the integrated chip has a gate structure disposed over a substrate between source and drain regions and a dielectric layer laterally extending from over the gate structure to between the gate structure and the drain region. A composite etch stop layer having a plurality of different dielectric materials is stacked over the dielectric layer. A contact etch stop layer directly contacts an upper surface and sidewalls of the composite etch stop layer. A field plate is laterally surrounded by a first inter-level dielectric (ILD) layer and vertically extends from a top of the first ILD layer, through the contact etch stop layer, and into the composite etch stop layer.

Abstract: The present disclosure, in some embodiments, relates to a transistor device having a field plate. The transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers are arranged over the gate electrode, and a field plate is arranged over the one or more dielectric layers. The field plate extends from a first outermost sidewall that is directly over an upper surface of the gate electrode to a second outermost sidewall that is between the gate electrode and the drain region and that extends to below the upper surface of the gate electrode.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a source region and a drain region within a substrate. A gate structure is formed over the substrate and between the source region and the drain region. One or more dielectric layers are formed over the gate structure, and a first inter-level dielectric (ILD) layer is formed over the one or more dielectric layers. The first ILD layer laterally surrounds the gate structure. The first ILD layer is etched to define contact openings and a field plate opening. The contact openings and the field plate opening are filled with a conductive material.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a gate structure over a substrate and between a source region and a drain region. A composite etch stop structure is formed over the gate structure and a first inter-level dielectric (ILD) layer is formed over the composite etch stop structure. The composite etch stop structure has a plurality of stacked dielectric materials. The first ILD layer is etched to concurrently define contact openings extending to the substrate and a field plate opening extending to the composite etch stop structure. The contact openings and the field plate opening are concurrently filled with one or more conductive materials.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a gate structure disposed over a substrate between a source region and a drain region. A first inter-level dielectric (ILD) layer is disposed over the substrate and the gate structure and a second ILD layer is disposed over the first ILD layer. A field plate etch stop structure is between the first ILD layer and the second ILD layer. A field plate extends from an uppermost surface of the second ILD layer to the field plate etch stop structure. A plurality of conductive contacts extend from the uppermost surface of the second ILD layer to the source region and the drain region.

Abstract: A semiconductor device includes a first a first transistor configured to operate at a first threshold voltage level. The first transistor includes a first gate structure and a first drain terminal electrically coupled to the first gate structure. The semiconductor device also includes a second transistor configured to operate at a second threshold voltage level different from the first threshold voltage level. The second transistor includes a second source terminal and a second gate structure electrically coupled to the first gate structure. The first gate structure and the second gate structure comprise a first component in common, and the second gate structure further includes at least one extra component disposed over the first component. The number of the at least one extra component is determined by a desired voltage difference between the first threshold voltage level and the second threshold voltage level.

Abstract: A rechargeable battery includes a battery body and a connector plug. The battery body has a recess, a circuit board and a cell. The circuit board is electrically connected to the battery cell. The connector plug is pivotally connected to the battery body and electrically connected to the circuit board. The connector plug is foldable to be received in the recess. Accordingly, the connector plug is pivotally connected to the battery body and is foldable to be received in the recess, so the battery body can be charged by means of the connector plug connected to an external power supply, thereby improving convenience in using the rechargeable battery.

Abstract: The present disclosure relates to an integrated chip. In some embodiments, the integrated chip has a gate structure disposed over a substrate between source and drain regions and a dielectric layer laterally extending from over the gate structure to between the gate structure and the drain region. A composite etch stop layer having a plurality of different dielectric materials is stacked over the dielectric layer. A contact etch stop layer directly contacts an upper surface and sidewalls of the composite etch stop layer. A field plate is laterally surrounded by a first inter-level dielectric (ILD) layer and vertically extends from a top of the first ILD layer, through the contact etch stop layer, and into the composite etch stop layer.

Abstract: A composite connection socket includes a metal housing, an insulative main body, a first row conductive terminal and a second row conductive terminal. The metal housing includes an accommodating space formed therein, and the insulative main body is received inside the accommodating space. The insulative main body includes a first side plate, a second side plate and a base; the first side plate and the second side plate are arranged corresponding to each other and protrude from the base. The first row conductive terminal is arranged on the first side plate and complies with a micro USB communication protocol interface. The second row conductive terminal is arranged on the second side plate and complies with a lightning standard interface. The composite connection socket is able to commonly accommodate two cable connectors of different standards of a micro USB connector or a lightning connector inserted therein.

Abstract: The present disclosure, in some embodiments, relates to a transistor device having a field plate. The transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers are arranged over the gate electrode, and a field plate is arranged over the one or more dielectric layers. The field plate extends from a first outermost sidewall that is directly over an upper surface of the gate electrode to a second outermost sidewall that is between the gate electrode and the drain region and that extends to below the upper surface of the gate electrode.

Abstract: A method includes forming a gate spacer along sidewalls of a gate structure, forming a source region and a drain region on opposite sides of the gate structure, wherein a sidewall of the source region is vertically aligned with a first sidewall of the gate spacer, depositing a dielectric layer over the substrate, depositing a conductive layer over the dielectric layer, patterning the dielectric layer and the conductive layer to form a field plate, wherein the dielectric layer comprises a horizontal portion extending from the second drain/source region to a second sidewall of the gate spacer and a vertical portion formed along the second sidewall of the gate spacer, forming a plurality of metal silicide layers by applying a salicide process to the conductive layer, the gate structure, the first drain/source region and the second drain/source region and forming contact plugs over the plurality of metal silicide layers.

Abstract: The present disclosure relates to a transistor device having a field plate, and a method of formation. In some embodiments, the transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers laterally extend from over the gate electrode to a location between the gate electrode and the drain region. A field plate is located within an inter-level dielectric (ILD) layer overlying the substrate. The field plate laterally extends from over the gate electrode to over the location and vertically extends from the one or more dielectric layers to a top surface of the ILD layer. A conductive contact is arranged over the drain region and is surrounded by the ILD layer. The conductive contact extends to the top surface of the ILD layer.

Abstract: A composite connection socket includes a metal housing, an insulative main body, a first row conductive terminal and a second row conductive terminal. The metal housing includes an accommodating space formed therein, and the insulative main body is received inside the accommodating space. The insulative main body includes a first side plate, a second side plate and a base; the first side plate and the second side plate are arranged corresponding to each other and protrude from the base. The first row conductive terminal is arranged on the first side plate and complies with a micro USB communication protocol interface. The second row conductive terminal is arranged on the second side plate and complies with a lightning standard interface. The composite connection socket is able to commonly accommodate two cable connectors of different standards of a micro USB connector or a lightning connector inserted therein.

Abstract: A socket outlet includes a main module and an expansion module. An expansion socket formed with a through hole, an inner annual groove, and an outer annual groove is disposed on the main module. Three electrodes are disposed on the expansion socket, respectively extended into the through hole, the inner annual groove, and the outer annual groove. An expansion plug including a conductive pin, an inner conductive ring, and an outer conductive ring is disposed on the expansion module. The expansion plug is plugged in the expansion socket, the conductive pin is plugged in the through hole, the inner conductive ring is plugged in the inner annual groove, and the outer conductive ring is plugged in the outer annual groove. The expansion module is connected to the main module by plugging the expansion plug into the expansion socket. The expansion module and the main module can be relatively rotated.

Abstract: A composite connection socket includes a metal housing, an insulative main body, a first row conductive terminal and a second row conductive terminal. The metal housing includes an accommodating space formed therein, and the insulative main body is received inside the accommodating space. The insulative main body includes a first side plate, a second side plate and a base; the first side plate and the second side plate are arranged corresponding to each other and protrude from the base. The first row conductive terminal is arranged on the first side plate and complies with a micro USB communication protocol interface. The second row conductive terminal is arranged on the second side plate and complies with a lightning standard interface. The composite connection socket is able to commonly accommodate two cable connectors of different standards of a micro USB connector or a lightning connector inserted therein.

Abstract: A composite connector is used for receiving a first and a second docking connectors (700, 800) and includes: an insulation main body (1); a first tongue (11) and a second tongue (12), and plural first, second and third terminals (3, 4, 5). The first tongue (11) and the second tongue (12) are connected to the insulation main body (1); the first terminals (3) and the second terminals (4) are disposed on two surfaces of the first tongue (11) for allowing the first docking connected (700) to be connected; the third terminals (5) are disposed on any surface of the second tongue (12) for allowing the second docking connector (800) to be connected. Accordingly, two interfaces can be integrated in the same connector, thereby achieving an objective of composite operation.

Abstract: A multi-type compatible connector includes an insulated seat (100), a first terminal set (210), a second terminal set (220) and a third terminal set (230). The insulated seat (100) is extended with a first tongue (110) and a second tongue (120). The first terminal set (210) is embedded in the first tongue (110). The second terminal set (220) and the third terminal set (230) are embedded in the second tongue (120). The first terminal set (210), the second terminal set (220) and the third terminal set (230) are arranged in different types. Thereby it can be compatible with male connectors with various specifications.

Abstract: A composite connector includes an insulative base having a seat and a tongue plate extended forward from the seat, a first insulative board attached onto the seat and arranged in parallel to the tongue and on one side of the first surface, a plurality of first conductive terminal pieces located on an outer side of the first insulative board and away from the tongue, a second insulative board attached onto the base and arranged in parallel to the tongue plate and on one side of the second surface, a plurality of second conductive terminal pieces located on an outer side of the second insulative board and away from the tongue plate, and a plurality of first elastic connecting terminals arranged between the first surface and the first insulative board. Accordingly, the technical effect of transmission for multiple transmission interfaces is achieved.