Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.

Abstract: A method including: providing a design data of an integrated circuit (IC), the design data comprising a first cell; identifying a first conductive line in the first cell as a critical internal net of the first cell, wherein the first conductive line is electrically connected between an input terminal of the first cell and an output terminal of the first cell; providing a library of the first cell, wherein the library includes a table of timing or power parameters of the first cell based on a multidimensional input set associated with the critical internal net; updating the design data by determining a timing or power value of the first cell based on the table; performing a timing analysis on the updated design data; and forming a photomask based on the updated design data.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Abstract: A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.

Abstract: A wireless serial connection communication system, including: a first circuit board, including a first antenna module which includes a first front wireless communication terminal and a first rear wireless communication terminal; and a second circuit board, disposed adjacent to the first circuit board, the second circuit board including a second antenna module which includes a second front wireless communication terminal and a second rear wireless communication terminal. The first rear wireless communication terminal is face to face adjacent to the second front wireless communication terminal. The first front wireless communication terminal and the second rear wireless communication terminal are respectively disposed on farther sides over the first and second circuit boards, with reference to the first rear wireless communication terminal and the second front wireless communication terminal.

Abstract: A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.

Abstract: A manufacturing method of the circuit board includes the following steps. A metal layer, a first substrate, a second substrate, and a third substrate are laminated. Multiple blind holes and a through hole are formed. A conductive material layer is formed, which covers the metal layer, the conductive layer of the third substrate, and an inner wall of the through hole, and fills the blind holes to define multiple conductive holes. The conductive material layer, the metal layer, and the conductive layer are patterned to form a first external circuit layer located on the first substrate and electrically connected to the conductive pillars, and a second external circuit layer located on the insulating layer and electrically connected to the conductive holes, and define a conductive through hole structure connecting the first external circuit layer and the second external circuit layer and located in the through hole.

Abstract: A circuit board includes a first external circuit layer, a first substrate, a second substrate, a third substrate, and a conductive through hole structure. The first substrate includes conductive pillars electrically connecting the first external circuit layer and the second substrate. The second substrate has an opening and includes a first dielectric layer. The opening penetrates the second substrate, and the first dielectric layer fills the opening. The third substrate includes an insulating layer, a second external circuit layer, and conductive holes. A conductive material layer of the conductive through hole structure covers an inner wall of a through hole and electrically connects the first and the second external circuit layers to define a signal path. The first external circuit layer, the conductive pillars, the second substrate, the conductive holes and the second external circuit layer are electrically connected to define a ground path surrounding the signal path.

Abstract: A switch control unit and optical control unit, including: a digital-to-analog converter, being switchable between being coupled to a first sensing unit and being coupled to a drive unit, through a common contact pad; a sensing contact pad, coupled to a second sensing unit; an analog-to-digital converter, for sensing voltages at the contact pads when coupled to the sensing units, wherein each of the sensing units has a minimum working voltage level; and a loop switching unit, coupled between the common contact pad, the analog-to-digital converter, and the sensing contact pad, wherein when the voltage at the common contact pad is substantially higher than the minimum working voltage level, the loop switching unit conducts the common contact pad to the analog-to-digital converter to sense the voltage at the common contact pad, and the digital-to-analog converter enters a high-impedance state such that the digital-to-analog converter does not sense the voltage at the common contact pad.

Abstract: The invention provides a wireless communication identification system, including: a master wireless communication unit, sending a first wireless signal, and progressively limiting a count of remaining wireless communication units responding to the first wireless signal in the wireless communication identification system according to a signal level adjustment scenario; and a first wireless communication unit, being the last wireless communication unit in the remaining wireless communication units to respond to the first wireless signal under the signal level adjustment scenario; wherein a first wireless signal connection is established between the master wireless communication unit and the first wireless communication unit by the first wireless signal, and the wireless communication identification system transmits first unit identity information of the first wireless communication unit through the first wireless signal connection.

Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.

Abstract: Systems with a contouring method are provided for contouring one or more targets that correspond to specific organs and/or tumors in a three-dimensional medical image of a patient using neural networks. The contouring system includes a storage unit, a processing unit, and a plurality of modules that are computer operable. The processing unit is used to obtain the image, and then to generate one or more contouring images using a contouring method. The contouring method includes enhancing image features and improving contouring accuracy using an image preprocessing module, and extracting a plurality of multi-scale image representations and expanding these representations to one or more contouring images using a neural network-based contouring module.

Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.

Abstract: A distributed battery management system, for managing a plurality of battery management units, wherein each of the battery management units, includes: a first battery cell, forming a charge-discharge connection at least with a second battery cell in a second battery management unit; a monitor circuit, monitoring a discharge process of the first battery cell via the charge-discharge connection, to record a discharge voltage time history of the first battery cell; and a calculation unit, calculating a real-time maximal energy storage capacity of the first battery cell, by an electrochemical equation calculated based on the discharge voltage time history and an electrical current time history of the first battery cell during the discharge process. The history of the real-time maximal energy storage capacity of the battery cell may be stored as an identity resume of the battery cell, in a battery resume record device.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are presented. In embodiments the methods of manufacturing include depositing a first bonding layer on a first substrate, wherein the first substrate comprises a semiconductor substrate and a metallization layer. The first bonding layer and the semiconductor substrate are patterned to form first openings. A second substrate is bonded to the first substrate. After the bonding the second substrate, the second substrate is patterned to form second openings, at least one of the second openings exposing at least one of the first openings. After the patterning the second substrate, a third substrate is bonded to the second substrate, and after the bonding the third substrate, the third substrate is patterned to form third openings, at least one of the third openings exposing at least one of the second openings.

Abstract: A method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.

Abstract: A semiconductor chip and a manufacturing method thereof are provided. The semiconductor chip includes: an array of pillar structures, disposed on a front surface of the semiconductor chip, and respectively including a ground pillar and multiple working pillars laterally spaced apart from and substantially parallel with a line portion of the ground pillar; and dummy pillar structures, disposed on the front surface of the semiconductor chip and laterally surrounding the pillar structures. Active devices formed inside the semiconductor chip are electrically connected to the working pillar. The ground pillars of the pillar structures and the dummy pillar structures are electrically connected to form a current pathway on the front surface of the semiconductor chip.

Abstract: A semiconductor package includes a die having a plurality of devices over a first substrate, where the first substrate includes a dopant at a first concentration and the first substrate has a first width along a horizontal direction. The semiconductor package further includes a second substrate fused with the first substrate, where the second substrate includes the dopant at a second concentration greater than the first concentration.

Abstract: A method of generating a first performance-data-library (for a standard-cell-library) includes: for each standard cell that includes multiple gates, sorting the gates into groups including searching for matched ones amongst the gates (matched gates), grouping corresponding matched gates into corresponding multiple member-gates, and (for unmatched ones of the gates having no other matched gate (unmatched gates)), grouping the unmatched gates into corresponding single-member groups; for each standard cell, generating a corresponding first volume of performance data including, for each group, discretely calculating the first volume of performance data, mapping the volume of performance data to the subject gate in the group, and, for each multimember group, mapping the volume of performance data to non-subject gates; and basing the first performance-data-library at least in part on the first volumes of performance data.