Abstract: A semiconductor device includes a substrate, one or more wiring layers disposed over the substrate, a passivation layer disposed over the one or more wiring layers, a first conductive layer disposed over the passivation layer, a second conductive layer disposed over the first conductive layer, an isolation structure formed in the first and second conductive layers to isolate a part of the first and second conductive layers, and a first metal pad disposed over the isolation structure and the part of the first and second conductive layers. In one or more of the foregoing or following embodiments, the semiconductor device further includes a second metal pad disposed over the second conductive layer and electrically isolated from the first metal pad.

Abstract: A method includes forming an interconnect structure over a semiconductor substrate. The interconnect structure includes a plurality of dielectric layers, and the interconnect structure and the semiconductor substrate are in a wafer. A plurality of metal pads are formed over the interconnect structure. A plurality of through-holes are formed to penetrate through the wafer. The plurality of through-holes include top portions penetrating through the interconnect structure, and middle portions underlying and joining to the top portions. The middle portions are wider than respective ones of the top portions. A metal layer is formed to electrically connect to the plurality of metal pads. The metal layer extends into the top portions of the plurality of through-holes.

Abstract: A manufacturing method for circuit board structure includes steps of providing a carrier, forming a first build-up layer including a plurality of first circuits, forming a second build-up layer including a plurality of second circuits on a side of the first build-up layer located away from the carrier, attaching a side of the second build-up layer located away from the first build-up layer to a core layer, and removing the carrier from the first build-up layer, where the first circuits are finer than the second circuits.

Abstract: A method of fabricating a semiconductor device with superlattice structures on a substrate with an embedded isolation structure is disclosed. The method includes forming an etch stop layer on a substrate, forming a superlattice structure on the etch stop layer, depositing an isolation layer on the superlattice structure, depositing a semiconductor layer on the isolation layer, forming a bi-layer isolation structure on the semiconductor layer, removing the substrate and the etch stop layer, etching the superlattice structure, the isolation layer, the semiconductor layer, and the bi-layer isolation structure to form a fin structure, and forming a gate-all-around structure on the fin structure.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Abstract: A method of fabricating a semiconductor device with superlattice structures on a substrate with an embedded isolation structure is disclosed. The method includes forming an etch stop layer on a substrate, forming a superlattice structure on the etch stop layer, depositing an isolation layer on the superlattice structure, depositing a semiconductor layer on the isolation layer, forming a bi-layer isolation structure on the semiconductor layer, removing the substrate and the etch stop layer, etching the superlattice structure, the isolation layer, the semiconductor layer, and the bi-layer isolation structure to form a fin structure, and forming a gate-all-around structure on the fin structure.

Abstract: A co-axial structure includes a substrate, a first conductive structure, a second conductive structure, and an insulating layer. The substrate includes a first surface. The first conductive structure includes a first circuit deposited on the first surface and a first via penetrating the substrate. The second conductive structure includes a second circuit deposited on the first surface and a second via penetrating the substrate. The first via and the second via extend along a first direction. The first circuit and the second circuit extend along a second direction, and the second direction is perpendicular to the first direction. The insulating layer is located between the first via and the second via. The insulating layer includes a filler. The first conductive structure and the second conductive structure are electrically insulated. The first circuit and the second circuit are coplanar.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: A method including: providing a design data of an integrated circuit (IC), the design data comprising a first cell; identifying a first conductive line in the first cell as a critical internal net of the first cell, wherein the first conductive line is electrically connected between an input terminal of the first cell and an output terminal of the first cell; providing a library of the first cell, wherein the library includes a table of timing or power parameters of the first cell based on a multidimensional input set associated with the critical internal net; updating the design data by determining a timing or power value of the first cell based on the table; performing a timing analysis on the updated design data; and forming a photomask based on the updated design data.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A circuit board includes a composite structure layer, at least one conductive structure, a thermally conductive substrate, and a thermal interface material layer. The composite structure layer has a cavity and includes a first structure layer, a second structure layer, and a connecting structure layer. The first structure layer includes at least one first conductive member, and the second structure layer includes at least one second conductive member. The cavity penetrates the first structure layer and the connecting structure layer to expose the second conductive member. The conductive structure at least penetrates the connecting structure layer and is electrically connected to the first conductive member and the second conductive member. The thermal interface material layer is disposed between the composite structure layer and the thermally conductive substrate, and the second structure layer is connected to the thermally conductive substrate through the thermal interface material layer.

Abstract: A pick arm for a pick and place apparatus for electronic devices has a main body having a proximal end whereat the pick arm is mountable onto a pick arm support, and a distal end at which a collet is mounted for holding an electronic device. A first rigid body is located adjacent to the proximal end of the pick arm and a second rigid body is located adjacent to the distal end of the pick arm. The first and second flexures connect the first rigid body to the second rigid body. Moreover, the first flexure is spaced from the second flexure, and the first and second flexures have opposing faces that are arranged substantially parallel to each other. An actuator is operative to apply a biasing force onto the second rigid body so as to bend the first and second flexures relative to the first rigid body for biasing the collet of the pick arm to move.

Abstract: A pick arm for a pick and place apparatus for electronic devices has a main body having a proximal end whereat the pick arm is mountable onto a pick arm support, and a distal end at which a collet is mounted for holding an electronic device. A first rigid body is located adjacent to the proximal end of the pick arm and a second rigid body is located adjacent to the distal end of the pick arm. The first and second flexures connect the first rigid body to the second rigid body. Moreover, the first flexure is spaced from the second flexure, and the first and second flexures have opposing faces that are arranged substantially parallel to each other. An actuator is operative to apply a biasing force onto the second rigid body so as to bend the first and second flexures relative to the first rigid body for biasing the collet of the pick arm to move.

Abstract: A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.

Abstract: A circuit board structure has a first flexible circuit board, a second flexible circuit board, and a rigid board structure. The first flexible circuit board has a first dielectric layer and a first conductive circuit. The second flexible circuit board has a second dielectric layer and a second conductive circuit. The rigid board structure connects the first flexible circuit board and the second flexible circuit board. The rigid board structure has a third dielectric layer and a third conductive circuit. A dielectric loss value of the third dielectric layer is less than that of each of the first dielectric layer and the second dielectric layer. The third conductive circuit is electrically connected to the first and second conductive circuits.

Abstract: This invention provides a method applied for the new dynamic arc radiotherapy treatment planning to calculate an optimal arc angle. With this invention, an operator without rich experience is able to reach the expected low dose in lungs easily and quickly. This invention can not only estimate the distribution of low radiation dose in lungs but also reduce the shortcomings like consumption of time and inaccuracy caused by manual trial and error.

Abstract: A switch control unit and optical control unit, including: a digital-to-analog converter, being switchable between being coupled to a first sensing unit and being coupled to a drive unit, through a common contact pad; a sensing contact pad, coupled to a second sensing unit; an analog-to-digital converter, for sensing voltages at the contact pads when coupled to the sensing units, wherein each of the sensing units has a minimum working voltage level; and a loop switching unit, coupled between the common contact pad, the analog-to-digital converter, and the sensing contact pad, wherein when the voltage at the common contact pad is substantially higher than the minimum working voltage level, the loop switching unit conducts the common contact pad to the analog-to-digital converter to sense the voltage at the common contact pad, and the digital-to-analog converter enters a high-impedance state such that the digital-to-analog converter does not sense the voltage at the common contact pad.

Abstract: A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

Abstract: A package structure including a circuit board and a heat generating element is provided. The circuit board includes a plurality of circuit layers and a composite material layer. A thermal conductivity of the composite material layer is between 450 W/mK and 700 W/mK. The heat generating element is disposed on the circuit board and electrically connected to the circuit layers. Heat generated by the heat generating element is transmitted to an external environment through the composite material layer.