Abstract: When digital input data disappear temporarily, within a counting period of the counter and pulse generator, an output voltage of the voltage generator rises, a threshold detector compares the output voltage of the voltage generator with a plurality of threshold values to generate a plurality of comparison results, and a logic gate unit generates a control signal according to the comparison results, to a charge pump, so that the charge pump controls the voltage-controlled oscillator to accelerate or decelerate.

Abstract: When digital input data disappear temporarily, within a counting period of the counter and pulse generator, an output voltage of the voltage generator rises, a threshold detector compares the output voltage of the voltage generator with a plurality of threshold values to generate a plurality of comparison results, and a logic gate unit generates a control signal according to the comparison results, to a charge pump, so that the charge pump controls the voltage-controlled oscillator to accelerate or decelerate.

Abstract: A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

Abstract: A circuit board structure has a first flexible circuit board, a second flexible circuit board, and a rigid board structure. The first flexible circuit board has a first dielectric layer and a first conductive circuit. The second flexible circuit board has a second dielectric layer and a second conductive circuit. The rigid board structure connects the first flexible circuit board and the second flexible circuit board. The rigid board structure has a third dielectric layer and a third conductive circuit. A dielectric loss value of the third dielectric layer is less than that of each of the first dielectric layer and the second dielectric layer. The third conductive circuit is electrically connected to the first and second conductive circuits.

Abstract: A circuit board structure has a first flexible circuit board, a second flexible circuit board, and a rigid board structure. The first flexible circuit board has a first dielectric layer and a first conductive circuit. The second flexible circuit board has a second dielectric layer and a second conductive circuit. The rigid board structure connects the first flexible circuit board and the second flexible circuit board. The rigid board structure has a third dielectric layer and a third conductive circuit. A dielectric loss value of the third dielectric layer is less than that of each of the first dielectric layer and the second dielectric layer. The third conductive circuit is electrically connected to the first and second conductive circuits.

Abstract: A method of fabricating a semiconductor device with superlattice structures on a substrate with an embedded isolation structure is disclosed. The method includes forming an etch stop layer on a substrate, forming a superlattice structure on the etch stop layer, depositing an isolation layer on the superlattice structure, depositing a semiconductor layer on the isolation layer, forming a bi-layer isolation structure on the semiconductor layer, removing the substrate and the etch stop layer, etching the superlattice structure, the isolation layer, the semiconductor layer, and the bi-layer isolation structure to form a fin structure, and forming a gate-all-around structure on the fin structure.

Abstract: The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.

Abstract: A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.

Abstract: The present invention provides a differential signal offset adjustment circuit, wherein first and second transistors are respectively coupled between a power supply line and a first current source, and between the power supply line and a second current source. First and second resistors are respectively coupled between the first transistor and a first variable current source, and between the second transistor and a second variable current source. Third and fourth transistors are respectively coupled between a third resistor and a third current source, and between a fourth resistor and a fourth current source, and have input terminals respectively coupled to the first and second resistors. Fifth and sixth transistors are respectively coupled between the power supply line and a fifth current source, and between the power supply line and a sixth current source, and have input terminals respectively coupled to the third and fourth transistors.

Abstract: A chip package structure includes at least one chip, at least one thermally conductive element, a molding compound, and a redistribution layer. The respective chip has an active surface and a back surface opposite to each other and a plurality of electrodes disposed on the active surface. The thermally conductive element is disposed on the back surface of the respective chip. The molding compound encapsulates the chip and the thermally conductive element and has an upper surface and a lower surface opposite to each other. A bottom surface of each of the electrodes of the respective chip is aligned with the lower surface of the molding compound. The molding compound exposes a top surface of the respective thermally conductive element. The redistribution layer is disposed on the lower surface of the molding compound and electrically connected to the electrodes of the respective chip.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Abstract: During frequency detection, a constant current source outputs an output current to charge a variable capacitor for multi-period. In a calibration mode, according to a comparison result between a cross voltage of the variable capacitor and a reference voltage, a capacitance value of the variable capacitor is adjusted. In a monitor mode, according to a reference frequency and the cross voltage of the variable capacitor, a frequency under test of a circuit under test is detected.

Abstract: An optical waveguide circuit substrate includes a circuit board and an optical waveguide structure disposed on a lower surface of the circuit board. A plurality of pads are disposed on an upper surface of the circuit board. The optical waveguide structure includes a first cladding layer, a second cladding layer, a core layer and a reflective layer. The core layer has an imprinted opening of which an aperture gradually increases from the first cladding layer to the second cladding layer. A first portion of the second cladding layer fills the imprinted opening and has a connection surface. The reflective layer is located between the core layer and the first portion, and an angle between the reflective layer and the connection surface is in a range from 44 degrees to 46 degrees. An orthographic projection of the reflective layer on the upper surface is located between the pads.

Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a gate stack. The first semiconductor fin is over the substrate and includes a first germanium-containing layer and a second germanium-containing layer over the first germanium-containing layer. The first germanium-containing layer has a germanium atomic percentage higher than a germanium atomic percentage of the second germanium-containing layer. The gate stack is across the first semiconductor fin.

Abstract: A system that combines augmented reality (AR) technology with self-created elements to produce video works and a media storing the same are revealed. The system includes a data module used for storing software drawing templates and software scenes, an image input module that reads a physical image of a physical picture book and defines a software image border, a recognition and analysis module that compares the software drawing template with the software image border to get software drawn content, and an integration module that integrates the software drawn content and the software scene for generating a self-created AR work. Thereby users can use the system to create AR video works with self-created elements in a real-time manner.

Abstract: A semiconductor device includes a gate structure disposed over a channel region, a source/drain epitaxial layer disposed at a source/drain region, a nitrogen containing layer disposed on the source/drain epitaxial layer, a silicide layer disposed on the nitrogen containing layer, and a conductive contact disposed on the silicide layer.

Abstract: A method includes etching a hybrid substrate to form a recess in the hybrid substrate, in which the hybrid substrate includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the first semiconductor layer, in which after the etching, a top surface of the first semiconductor layer is exposed to the recess; forming a spacer on a sidewall of the recess, in which the spacer is slanted at a first angle relative to a top surface of the first semiconductor layer; reshaping the spacer such that the a first sidewall of the reshaped spacer is slanted at a second angle relative to the top surface of the first semiconductor layer, in which the second angle is greater than the first angle; and performing a first epitaxy process to grow an epitaxy semiconductor layer in the recess after reshaping the spacer.

Abstract: A package structure including a circuit board and a heat generating element is provided. The circuit board includes a plurality of circuit layers and a composite material layer. A thermal conductivity of the composite material layer is between 450 W/mK and 700 W/mK. The heat generating element is disposed on the circuit board and electrically connected to the circuit layers. Heat generated by the heat generating element is transmitted to an external environment through the composite material layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Abstract: A semiconductor device includes a substrate and a semiconductor layer. The substrate includes a planar portion and a plurality of pillars on a periphery of the planar portion. The pillars are shaped as rectangular columns, and corners of two of the pillars at the same side of the planar portion are aligned in a horizontal direction or a direction perpendicular to the horizontal direction. The semiconductor layer is disposed over the planar portion and between the pillars.