Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Abstract: In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Abstract: A method includes providing a structure having a substrate, first and second semiconductor fins extending from the substrate, and a dielectric fin between the first and second semiconductor fins; forming a temporary gate on top and sidewalls of the first and second semiconductor fins and the dielectric fin; forming gate spacers on sidewalls of the temporary gate; removing the temporary gate and a first portion of the dielectric fin between the gate spacers; forming a gate between the gate spacers and on top and sidewalls of the first and second semiconductor fins, wherein the dielectric fin is in physical contact with sidewalls of the gate; removing a second portion of the dielectric fin, thereby exposing the sidewalls of the gate; and performing an etching process to the gate through the exposed sidewalls of the gate, thereby separating the gate into a first gate segment and a second gate segment.

Abstract: In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Abstract: Examples disclosed herein provide a system including a holder to secure a removable module. In one example, the removable module includes a plug comprising holes. The system further includes a receptacle mounted on a printed circuit board (PCB). As an example, the receptacle includes elastic members to make contact with the holes in the plug when the receptacle is to accommodate the plug of the removable module. As an example, the holder is slidable over the receptacle to constrain the elastic members of the receptacle to maintain contact with the holes in the plug of the removable module.

Abstract: In a method for manufacturing a semiconductor device, a gate structure is formed over a channel layer and an isolation insulating layer. A first sidewall spacer layer is formed on a side surface of the gate structure. A sacrificial layer is formed so that an upper portion of the gate structure with the first sidewall spacer layer is exposed from the sacrificial layer and a bottom portion of the gate structure with the first sidewall spacer layer is embedded in the first sacrificial layer. A space is formed between the bottom portion of the gate structure and the sacrificial layer by removing at least part of the first sidewall spacer layer. After the first sidewall spacer layer is removed, an air gap is formed between the bottom portion of the gate structure and the sacrificial layer by forming a second sidewall spacer layer over the gate structure.

Abstract: A semiconductor device package includes a supporting element, a transparent plate disposed on the supporting element, a semiconductor device disposed under the transparent plate, and a lid surrounding the transparent plate. The supporting element and the transparent plate define a channel.

Abstract: Examples disclosed herein provide a system including a holder to secure a removable module. In one example, the removable module includes a plug comprising holes. The system further includes a receptacle mounted on a printed circuit board (PCB). As an example, the receptacle includes elastic members to make contact with the holes in the plug when the receptacle is to accommodate the plug of the removable module. As an example, the holder is slidable over the receptacle to constrain the elastic members of the receptacle to maintain contact with the holes in the plug of the removable module.

Abstract: An enhanced tunnel field effect transistor includes a substrate, a layer of P-I-N structure, a hetero-material layer, a gate dielectric layer, a gate structure and a spacer, in which the layer of P-I-N structure is disposed on the substrate, the hetero-material layer is disposed on portion of the layer of P-I-N structure, the gate dielectric layer is disposed on the hetero-material layer, the gate structure is disposed the gate dielectric layer and a spacer is disposed on a sidewall of the hetero-material layer, the gate dielectric layer, and the gate structure. The hetero-material layer can increase the tunneling efficiency of the enhanced tunnel field effect transistor to increase the conductor current to improve the enhanced tunnel field effect transistor performance.

Abstract: A location customer premise equipment (CPE), the location CPE in electronic communication with a location telephone, a remote CPE and a remote telephone. The location CPE includes a first processor. The first processor receives a switch signal from the location telephone, and sends a corresponding first request signal to the remote CPE, and then the first processor receives a corresponding first response signal and a phone number of an unused network of the remote telephone from the remote CPE, and dials the phone number of an unused network to establish an unused network communication link with the remote CPE and cuts off a used network communication link.

Abstract: A network device includes a plurality of wide area network (WAN) interfaces, and a multi-WAN interface selection module. The WAN interfaces transmit session requests. The multi-WAN interface selection module communicates with the WAN interfaces and includes a monitoring unit, a quality table management unit and a network selection unit. The monitoring unit monitors and records network QoS corresponding to each WAN interface to obtain corresponding QoS information. The quality table management unit establishes a QoS information table according to the QoS information from the monitoring unit and updates the QoS information table in real time, and the network selection unit queries the QoS information table to select and distribute a WAN interface to send a new session request.

Abstract: A wireless access point (WAP) includes a radio frequency (RF) module, an identifying module, and a controlling module. The RF module is configured for sending and receiving a wireless signal. The identifying module is configured for identifying whether or not the wireless signal matches the frame format of the PCLP sub-layer of the IEEE 802.11 standards, thereby generating an identifying result. The controlling module is configured for controlling the WAP to switch itself to a power-saving mode (PSM) or a constantly awake mode (CAM), according to the identifying result from the identifying module, wherein in the PSM, under the control of the controlling module, the WAP only receives the wireless signal.

Abstract: A location customer premise equipment (CPE), the location CPE in electronic communication with a location telephone, a remote CPE and a remote telephone. The location CPE includes a first processor. The first processor receives a switch signal from the location telephone, and sends a corresponding first request signal to the remote CPE, and then the first processor receives a corresponding first response signal and a phone number of an unused network of the remote telephone from the remote CPE, and dials the phone number of an unused network to establish an unused network communication link with the remote CPE and cuts off a used network communication link.

Abstract: A network device includes a plurality of wide area network (WAN) interfaces, and a multi-WAN interface selection module. The WAN interfaces transmit session requests. The multi-WAN interface selection module communicates with the WAN interfaces and includes a monitoring unit, a quality table management unit and a network selection unit. The monitoring unit monitors and records network QoS corresponding to each WAN interface to obtain corresponding QoS information. The quality table management unit establishes a QoS information table according to the QoS information from the monitoring unit and updates the QoS information table in real time, and the network selection unit queries the QoS information table to select and distribute a WAN interface to send a new session request.

Abstract: A wireless access point (WAP) includes a radio frequency (RF) module, an identifying module, and a controlling module. The RF module is configured for sending and receiving a wireless signal. The identifying module is configured for identifying whether or not the wireless signal matches the frame format of the PCLP sub-layer of the IEEE 802.11 standards, thereby generating an identifying result. The controlling module is configured for controlling the WAP to switch itself to a power-saving mode (PSM) or a constantly awake mode (CAM), according to the identifying result from the identifying module, wherein in the PSM, under the control of the controlling module, the WAP only receives the wireless signal.

Abstract: A linear actuator has a clutch mechanism settled between a worm gear and a screw of the linear actuator. The clutch mechanism including a disc spring normally stays in a clutched position where a driving power is transmitted from the worm gear to the screw. When the linear actuator is overloaded, the clutch mechanism changes to a declutched position by compressing the disc spring so that the driving power is not transmitted to the screw. Thereby, the clutch mechanism protects internal components of the linear actuator from being damaged, thereby improving durability of the linear actuator.

Abstract: This invention relates to methods for modulating neuronal cell death or impairment, and methods for the treatment, prevention, and/or amelioration of symptoms of one or more conditions or diseases in a mammal caused by neuronal cell death or dysfunction.

Abstract: Disclosed are methods for modulating neuron activity, and in particular, for modulating motor neuron function and activity, particularly for use in the treatment, prevention, and/or amelioration of symptoms of one or more motor neuron conditions or diseases in a mammal. Also disclosed are compositions comprising one or more agonists or antagonists of a mammalian Müllerian Inhibitory Substance receptor polypeptide, as well as pharmaceutical formulations, isolated host cells, and therapeutic and/or diagnostic kits that comprises such agonists or antagonists.

Abstract: The present invention relates to a modified radial motion method for modifying lengthwise curvature of face-milling spiral bevel and hypoid gears, which is capable of modifying a locus of a cutter center into a curve, without changing a head cutter's geometry, by providing modified radial motion of the head cutter cooperating with rotation of a cradle. The modified radial motion method in accordance with the present invention completely solves the contradictions caused by the existing lengthwise curvature modification methods, which is able to increase the adjustability of the gear set without reducing the tooth contact.