Patents by Inventor Pekka J. Soininen
Pekka J. Soininen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11634814Abstract: An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.Type: GrantFiled: June 26, 2020Date of Patent: April 25, 2023Assignee: BENEQ GROUP OYInventors: Ville Miikkulainen, Hulda Aminoff, Pekka Soininen, Pekka J. Soininen
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Patent number: 11421319Abstract: The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.Type: GrantFiled: December 29, 2020Date of Patent: August 23, 2022Assignee: BENEQ OYInventors: Pekka J. Soininen, Vasil Vorsa, Mohammad Ameen
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Publication number: 20220259733Abstract: An atomic layer deposition apparatus including an atomic layer deposition reactor and a reactor door. The reactor door is arranged against the end edge of the reactor in a closed position of the reactor. The apparatus having a cooling arrangement for cooling the reactor door having a shell structure surrounding the reactor from the outside of the reactor such that a cooling channel is formed between the shell structure and the at least one side wall of the reactor; a heat exchanger element arranged in the cooling channel in an area of the end edge; and a ventilation discharge connection in connection with the cooling channel provided at a distance from the edge end.Type: ApplicationFiled: June 26, 2020Publication date: August 18, 2022Inventors: Hulda AMINOFF, Pekka SOININEN, Pekka J. SOININEN, Ville MIIKKULAINEN
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Publication number: 20220243328Abstract: A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.Type: ApplicationFiled: June 26, 2020Publication date: August 4, 2022Inventors: Pekka SOININEN, Hulda AMINOFF, Pekka J. SOININEN, Ville MIIKKULAINEN
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Publication number: 20220243320Abstract: A precursor source arrangement for an atomic layer deposition apparatus for receiving a liquid precursor container for liquid precursor. The precursor source arrangement includes a precursor container support arrangement arranged to hold the liquid precursor container in inclined position relative to vertical direction.Type: ApplicationFiled: June 26, 2020Publication date: August 4, 2022Inventors: Hulda AMINOFF, Pekka SOININEN, Pekka J. SOININEN, Ville MIIKKULAINEN
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Publication number: 20220205098Abstract: An atomic layer deposition apparatus for processing substrates. The apparatus includes an atomic layer deposition reactor and one or more precursor supply sources connected to the atomic layer deposition reactor. The apparatus further includes an outer apparatus casing, the atomic layer deposition reactor and the one or more precursor sources being arranged inside the outer apparatus casing, an apparatus ventilation discharge connection arranged to discharge ventilation gas from inside of the outer apparatus casing and one or more apparatus ventilation inlet connections provided to the outer apparatus casing and arranged to provide ventilation gas into the outer apparatus casing.Type: ApplicationFiled: June 26, 2020Publication date: June 30, 2022Inventors: Pekka SOININEN, Hulda AMINOFF, Ville MIIKKULAINEN, Pekka J. SOININEN
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Publication number: 20220205097Abstract: An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.Type: ApplicationFiled: June 26, 2020Publication date: June 30, 2022Inventors: Ville MIIKKULAINEN, Hulda AMINOFF, Pekka SOININEN, Pekka J. SOININEN
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Publication number: 20210115555Abstract: The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.Type: ApplicationFiled: December 29, 2020Publication date: April 22, 2021Inventors: Pekka J. SOININEN, Vasil VORSA, Mohammad AMEEN
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Publication number: 20210108138Abstract: A material comprising a first layer of matrix material doped with a dopant metal is disclosed. The matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium. In the first layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +2. Further is disclosed a method for fabricating the material and a device comprising the material.Type: ApplicationFiled: October 15, 2019Publication date: April 15, 2021Applicant: Beneq OyInventors: Saoussen Merdes, Pekka J. Soininen, Erik Østreng
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Patent number: 10961620Abstract: The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.Type: GrantFiled: March 3, 2017Date of Patent: March 30, 2021Assignee: BENEQ OYInventors: Pekka J. Soininen, Vasil Vorsa, Mohammad Ameen
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Publication number: 20200080197Abstract: The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.Type: ApplicationFiled: March 3, 2017Publication date: March 12, 2020Inventors: Pekka J. SOININEN, Vasil VORSA, Mohammad AMEEN
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Publication number: 20150125599Abstract: A method includes receiving an atomic layer deposition (ALD) cartridge into a receiver of an ALD reactor by a quick coupling method. The ALD cartridge serves as an ALD reaction chamber, and the method includes processing surfaces of particulate material within the ALD cartridge by sequential self-saturating surface reactions.Type: ApplicationFiled: May 14, 2012Publication date: May 7, 2015Applicant: Picocun OyInventors: Sven Lindfors, Pekka J Soininen
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Publication number: 20140335267Abstract: The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.Type: ApplicationFiled: November 22, 2011Publication date: November 13, 2014Applicant: PICOSUN OYInventors: Sven Lindfors, Pekka J Soininen
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Patent number: 8753716Abstract: A method includes depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions, controlling feeding of precursor vapor from a precursor source to a reaction chamber including the reactor containing the substrate with a first pulsing valve embedded into the precursor source, and conveying inactive gas to a precursor cartridge attached to the precursor source to raise pressure of the precursor cartridge and to ease subsequent flow of a mixture of precursor vapor and inactive gas towards the reaction chamber.Type: GrantFiled: March 5, 2013Date of Patent: June 17, 2014Assignee: Picosun OyInventors: Pekka J. Soininen, Sven Lindfors
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Patent number: 8741062Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.Type: GrantFiled: April 22, 2008Date of Patent: June 3, 2014Assignee: Picosun OyInventors: Sven Lindfors, Pekka J. Soininen
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Publication number: 20130240056Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.Type: ApplicationFiled: April 29, 2013Publication date: September 19, 2013Applicant: Picosun OyInventors: Sven Lindfors, Pekka J. Soininen
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Patent number: 8536058Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: GrantFiled: June 3, 2011Date of Patent: September 17, 2013Assignee: ASM International N.V.Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Publication number: 20120028474Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: ApplicationFiled: June 3, 2011Publication date: February 2, 2012Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Patent number: 7955979Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.Type: GrantFiled: February 28, 2008Date of Patent: June 7, 2011Assignee: ASM International N.V.Inventors: Juhana Kostamo, Pekka J. Soininen, Kai-Erik Elers, Suvi Haukka
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Patent number: RE48871Abstract: A method and apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas injection structure that is positioned within a reaction chamber that has a platform. The gas injection structure may be positioned above or below the platform and comprises a first gas injector and a second gas injector. The first gas injector is in fluid communication with a first reactant source and a purge gas source. Similarly, the second gas injector is in fluid communication with a second reactant source and a purge gas source. The first and second injectors include hollow tubes with apertures opening to the reaction chamber. In one configuration, the tubes are in the form of interleaved branching tubes forming showerhead rakes. Methods are provided for deposition, in which multiple pulses of purge and reactant gases are provided for each purge and reactant step.Type: GrantFiled: March 30, 2020Date of Patent: January 4, 2022Assignee: ASM IP HOLDING B.V.Inventors: Pekka J. Soininen, Sven Lindfors