Abstract: An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

Abstract: An atomic layer deposition reactor and a method for operating a reactor. The reactor includes a vacuum chamber having a loading wall provided with a loading opening, and a reactor door assembly having a reactor door. The reactor door assembly is arranged to move the reactor door between a first door position in which the reactor door is against the loading wall and arranged to close the loading opening, and a second door position in which the reactor door is spaced apart from and opposite the loading wall. The reactor door assembly is further arranged to move the reactor door between the second door position, and a third door position in which the reactor door is aside from the loading opening.

Abstract: A vacuum chamber and an arrangement for atomic layer deposition. The vacuum chamber includes a loading wall provided with a loading opening, a back wall opposite the loading wall, and a first direction extending in a direction between the loading wall and the back wall. The vacuum chamber further includes a first vacuum chamber support rail inside the vacuum chamber and extending in the first direction, and a second vacuum chamber support rail inside the vacuum chamber and extending in the first direction and arranged spaced apart from the first vacuum chamber support rail. The first vacuum chamber support rail is arranged independently movable in vertical direction, and the second vacuum chamber support rail is arranged independently movable in vertical direction.

Abstract: A loading device, arrangement, and method for loading a reaction chamber inside a vacuum chamber. The loading device includes a loading platform arranged to support the reaction chamber, the loading platform having a first end, a second end and a first direction, a first loading member provided to the loading platform, and a second loading member provided to the loading platform, the first loading member being arranged independently movable in relation to the loading platform and the second loading member in the first direction, and the second loading member being arranged independently movable in relation to the loading platform and the first loading member in the first direction.

Abstract: A gas feeding cup removably provided in a fixed gas manifold structure of an atomic layer deposition apparatus and including a cup bottom including gas feeding channels extending through the cup bottom from a cup bottom outer surface to a cup bottom inner surface on the other side of the cup bottom; and a cup wall surrounding the cup bottom and extending transverse relative to the cup bottom in a direction away from the cup bottom at the inner surface side of the cup bottom such that a gas feeding space is formed by the cup wall and the cup bottom inner surface.

Abstract: An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

Abstract: An atomic layer deposition apparatus and a method for processing a surface of a substrate successively with at least a first precursor and a second precursor. The apparatus includes a substrate support and a precursor supply head. The substrate support and the precursor supply head are arranged opposite to each other such that a reaction gap is provided between the substrate support and the precursor supply head. The apparatus further includes a moving mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The moving mechanism is arranged move the substrate support and the precursor supply head relative to each other in a moving direction such that the reaction gap is adjusted.

Abstract: An atomic layer deposition apparatus includes a substrate support having a support surface, a precursor supply head having an output face, and a rotating mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The apparatus further includes a process chamber provided with a discharge connection for discharging gases from the process chamber.

Abstract: An atomic layer deposition layer apparatus including a substrate support having a support surface, a precursor supply head having an output face with at least one reaction zone via which precursors are supplied, and a rotating mechanism. The substrate support and the precursor supply head are arranged to be rotated relative to each other with the rotating mechanism. The at least one reaction zone includes a precursor supply zone open to the output face of the precursor supply head for supplying precursor, and a suction zone open to the output face of the precursor supply head and arranged to surround the precursor supply zone at the output face of the precursor supply head.

Abstract: The invention relates to a nozzle and nozzle head arranged to supply gas towards a surface of a substrate The nozzle comprises a nozzle output surface via which the gas is supplied towards the surface of the substrate, a nozzle top surface opposite the nozzle output surface, and a nozzle side wall extending between the nozzle output surface and the nozzle top surface. The nozzle further comprises at least one recess provided to the nozzle side wall, the at least one recess extending between the nozzle top surface and the nozzle output surface for providing a gas passage from the nozzle top surface to the nozzle output surface when the nozzle side wall is against a counter surface.

Abstract: An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.

Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.

Abstract: An apparatus and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD) includes a reaction chamber, a chamber plate for closing the reaction chamber, a motor arranged to move the chamber plate between an open position, in which the reaction chamber is open, and a closed position, in which the reaction chamber is closed, and an actuator arm mechanism connected to said motor. The actuator arm mechanism having three or more actuator arms having a distal end, which is connected to the chamber plate, the distal ends of the three or more actuator arms define a plane on the chamber plate.

Abstract: An atomic layer deposition apparatus including an atomic layer deposition reactor and a reactor door. The reactor door is arranged against the end edge of the reactor in a closed position of the reactor. The apparatus having a cooling arrangement for cooling the reactor door having a shell structure surrounding the reactor from the outside of the reactor such that a cooling channel is formed between the shell structure and the at least one side wall of the reactor; a heat exchanger element arranged in the cooling channel in an area of the end edge; and a ventilation discharge connection in connection with the cooling channel provided at a distance from the edge end.

Abstract: A precursor source arrangement for an atomic layer deposition apparatus for receiving a liquid precursor container for liquid precursor. The precursor source arrangement includes a precursor container support arrangement arranged to hold the liquid precursor container in inclined position relative to vertical direction.

Abstract: A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.

Abstract: A precursor supply chamber for accommodating a precursor container in connection with an atomic layer deposition apparatus includes chamber walls defining a chamber space inside the precursor supply chamber. The precursor supply chamber also includes a chamber door assembly arranged to close the precursor supply chamber in a gas tight manner, a first heating element provided to the precursor supply chamber and arranged to heat the precursor container inside the chamber space of the precursor supply chamber and a gas tight precursor connection provided to the chamber walls for supplying precursor from the precursor container outside the precursor supply chamber.

Abstract: An atomic layer deposition apparatus for processing substrates. The apparatus includes an atomic layer deposition reactor and one or more precursor supply sources connected to the atomic layer deposition reactor. The apparatus further includes an outer apparatus casing, the atomic layer deposition reactor and the one or more precursor sources being arranged inside the outer apparatus casing, an apparatus ventilation discharge connection arranged to discharge ventilation gas from inside of the outer apparatus casing and one or more apparatus ventilation inlet connections provided to the outer apparatus casing and arranged to provide ventilation gas into the outer apparatus casing.

Abstract: An atomic layer deposition apparatus having a vacuum chamber, a deposition chamber within the vacuum chamber, an inlet channel extending from outside of the vacuum chamber to the deposition chamber such that the inlet channel is connected to the deposition chamber for supplying gases to the deposition chamber, a discharge channel extending from the deposition chamber to outside of the vacuum chamber for discharging gases from the deposition chamber, one or more first precursor supply sources connected to the inlet channel, and one or more second precursor supply sources connected to the inlet channel. The vacuum chamber is arranged between the one or more first precursor supply sources and the one or more second precursor supply sources.

Abstract: A precursor supply cabinet for accommodating one or more precursor containers having cabinet walls defining an inner cabinet space. The precursor supply cabinet includes a ventilation discharge connection arranged to discharge ventilation gas from the inner cabinet space, one or more ventilation inlet connections, two or more separate gas tight precursor supply chambers for accommodating precursor containers. The gas tight precursor supply chambers are arranged inside the inner cabinet space of the precursor supply cabinet such that the inner cabinet space of the precursor supply cabinet surrounding the separate gas tight precursor supply chambers is ventilated.