Abstract: Described herein is an apparatus and nozzle head for coating a surface of a substrate. The apparatus comprising a process chamber having inside a gas atmosphere, a nozzle head arranged inside the process chamber, precursor supply and discharge means. The nozzle head including one or more first precursor nozzles for subjecting the surface of the substrate to the first precursor, one or more second precursor nozzles for subjecting the surface of the substrate to the second precursor and one or more purge gas channels between the first and second precursor zones. In certain aspects, the purge gas channel is at least partly open to the gas atmosphere comprising purge gas for subjecting the surface of the substrate to purge gas.

Abstract: The invention is related to an apparatus and a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. According to the invention a first starting material is fed on the surface of the substrate locally by means of a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

Abstract: Methods for providing one or more coating layers on a surface of a substrate by successive surface reactions of at least a first and second precursor are provided. The methods generally include supplying the first precursor from a first precursor nozzle and the second precursor from a second precursor nozzle to the surface of the substrate, and moving the substrate relative to at least one of the first and second precursor nozzle. The methods can further include subjecting only one or more first limited sub-areas of the surface of the substrate to the first and second precursor by cooperation of supplying the first and second precursor and simultaneously moving the substrate relative to at least one of the first and second precursor nozzle.

Abstract: The invention relates to an apparatus and nozzle head for processing a surface of a substrate. The apparatus includes a substrate support mechanism for supporting the substrate on a substrate support plane in a process zone, a nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor and a nozzle head support mechanism for supporting the nozzle head at a predetermined distance from the substrate support plane. The nozzle head support mechanism includes a nozzle head support surface and, that the nozzle head is supported to the nozzle head support surface.

Abstract: The invention relates to a nozzle head, an apparatus and method for subjecting a surface of a substrate to successive surface reactions of at least a first precursor (A) and a second precursor (B). The nozzle head having an output face comprises at least one precursor nozzle for supplying precursor (A, B) to the surface of the substrate and at least one discharge channel for discharging precursor (A, B) from the surface of the substrate. The output face comprises in the following order: a discharge channel, at least one at least one precursor nozzle arranged to supply the first precursor (A) and the second precursor (B) and a discharge channel.

Abstract: The invention relates to a method and an apparatus for providing one or more coating layers on a surface of a substrate by successive surface reactions of at least a first and second precursor. The method includes supplying the first precursor from a first precursor nozzle and the second precursor from a second precursor nozzle to the surface of the substrate, and moving the substrate relative to at least one of the first and second precursor nozzle. The method further includes subjecting only one or more first limited sub-areas of the surface of the substrate to the first and second precursor by cooperation of supplying the first and second precursor and simultaneously moving the substrate relative to at least one of the first and second precursor nozzle.

Abstract: The present invention relates to an apparatus and method for processing a surface of a substrate by subjecting the surface to successive surface reactions of a first and second precursor. The apparatus includes a nozzle head having two or more precursor nozzles and a moving mechanism for moving the nozzle head in non-linear oscillating movement in a first and second movement direction between a first extreme position and a second extreme position via a centre position. The moving mechanism includes first driving means for accelerating the nozzle head in the first moving direction and decelerating the nozzle head in the second moving direction and second driving means for accelerating the nozzle head in the second moving direction and decelerating the nozzle head in the first moving direction.

Abstract: The invention relates to an apparatus and nozzle head for processing a surface of a substrate. The apparatus includes a substrate support mechanism for supporting the substrate on a substrate support plane in a process zone, a nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor and a nozzle head support mechanism for supporting the nozzle head at a predetermined distance from the substrate support plane. The nozzle head support mechanism includes a nozzle head support surface and, that the nozzle head is supported to the nozzle head support surface.

Abstract: A nozzle and nozzle head arranged to subject a surface of a substrate to gaseous precursors. The nozzle includes an output face via which the precursor is supplied, a longitudinal precursor supply element for supplying precursor and a longitudinal discharge channel open to and along the output face for discharging at least a fraction of the precursor supplied from the precursor channel. The precursor supply element is arranged to extend inside the discharge channel such that the precursor supply element divides the discharge channel in the longitudinal direction to a first discharge sub-channel and a second discharge sub-channel on opposite sides of the precursor supply element for supplying precursor through the discharge channel.

Abstract: In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al2O3) or zirconium oxide may be used as the coating material.

Abstract: In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed 5 on the surface of silver by depositing successive molecule layers of the coating material. For example aluminum oxide (Al 2O3) or zirconium oxide may be used as the coating material.

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head.

Abstract: The invention relates to an arrangement in connection with an ALD reactor comprising a reaction chamber, the arrangement comprising fittings for feeding a reaction gas to the reaction chamber and for suctioning the reaction gas back, and fittings for feeding a barrier gas. The fittings for feeding and suctioning back the reaction gas and for feeding the barrier gas comprise a middle element having multiple parallel channels which extend through the element, and a first and a second flow-reversing element arranged at ends of the middle element into which the channels open, the flow-reversing elements being arranged to combine the channels in the middle element so as to provide an interchannel flow.

Abstract: The invention relates to an apparatus for producing nanotubes, the apparatus being adapted to produce doped and/or undoped single-walled or multi-walled nanotubes, the apparatus comprising at least a thermal reactor. In accordance with the invention, the reactor is at least of the hottest part thereof and at least partly manufactured from a material that is at least partly sublimed into the thermal reactor as a result of the thermal reactor being heated, and the sublimed material at least partly participates in the growth of the nanotubes.

Abstract: The invention is related to an apparatus and a method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. According to the invention a first starting material is fed on the surface of the substrate locally by means of a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

Abstract: Described herein is an apparatus and nozzle head for coating a surface of a substrate. The apparatus comprising a process chamber having inside a gas atmosphere, a nozzle head arranged inside the process chamber, precursor supply and discharge means. The nozzle head including one or more first precursor nozzles for subjecting the surface of the substrate to the first precursor, one or more second precursor nozzles for subjecting the surface of the substrate to the second precursor and one or more purge gas channels between the first and second precursor zones. In certain aspects, the purge gas channel is at least partly open to the gas atmosphere comprising purge gas for subjecting the surface of the substrate to purge gas.

Abstract: An apparatus for carrying out atomic layer deposition onto a surface of a substrate by exposing the surface of the substrate to alternate starting material surface reactions, the apparatus including two or more low-pressure chambers, two or more separate reaction chambers arranged to be placed inside the low-pressure chambers, and at least one starting material feed system common to two or more low-pressure chambers for carrying out atomic layer deposition. The apparatus includes at least one loading device arranged to load and unload substrates to/from the reaction chamber and further to load and unload the reaction chambers to/from the low-pressure chambers.

Abstract: An ALD reactor for treating one or more substrates is provided. The ALD reactor includes at least one reaction chamber which has a front plate including gas connections for introducing starting materials, flushing gases and the like gases into the reaction chamber. In addition, the front plate is arranged for being placed over the substrate for closing the reaction chamber and at distance from the substrate surface for opening the reaction chamber such that the substrate is arranged for being loaded below, above or in front of the front plate, when the reaction chamber is in the open state, in which the front plate is at a distance from the substrate and such that the substrate is treatable by the ALD method in the closed state of the reaction chamber, in which the front plate is placed onto the substrate.

Abstract: A reaction chamber for an atomic layer deposition reactor is provided. The reaction chamber includes outer walls for providing a reaction space inside the reaction chamber. At least one of the outer walls of the reaction chamber is made from a flexible thinsheet.