Abstract: A terminal device interaction method and apparatus are disclosed. In the method, a first terminal device receives a first sharing operation for a first common application APP (S11), the first terminal device transmits a first sharing instruction based on the first sharing operation (S12), and the first terminal device receives and displays information about first data transmitted by a second terminal device (S13); the first terminal device transmits a second sharing instruction (S14); and the first terminal device receives first target data that is transmitted by the second terminal device based on the second sharing instruction (S15).

Abstract: The present disclosure relates to an automatically serving and recovering structure device for a table air hockey, which comprises a body, a ball pocket baseplate bracket, a ball pocket baseplate, a ball pocket, a nylon disc, a motor, a nylon cross turntable, three-bump hardware, a straight fixed iron block, a bearing, fairway hardware, an acrylic table, a counter and a plurality of screwing elements. The balls are driven by the counterclockwise rotation of the nylon cross turntable, and are pushed up in a straight line in sequence to enter a track under the cooperation of a plurality of three-bump hardware distributed in an arc line. The ball falls off the game table from the ball ejection track, then enters the ball inlet hardware, passes through the counter, passes through the hardware parts of the ball bend and then falls into the ball pocket.

Abstract: A message display method includes receiving, by a terminal device, a message from a second application (APP) when displaying an interface of a first APP, wherein the first APP and the second APP are different applications (APPs), displaying the message in a pop-up window display manner on the interface, accepting a first operation comprising sliding, double-taping, or touching and holding the pop-up window of the message, and displaying, in response to the first operation, content of the message in a split-screen display manner.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: The disclosure relates to a synthesis method of long carbon chain semi-aromatic nylon. The synthesis method comprises the following steps: mixing a wet powdery nylon salt, an antioxidant, a catalyst, a surfactant and pellets, and carrying out a one-step solid state polymerization under dynamic mixing to obtain a powdery nylon; under dynamic mixing, enabling the pellets to promote the stirring and mixing of the material and reducing material adhesion to the wall; the one-step solid state polymerization comprises a pre-solid state polymerization and a post-solid state polymerization; in the pre-solid state polymerization, ensuring the nylon salt and the prepolymer not to be molten; in the post-solid state polymerization, gradually reducing the system pressure to vacuum, and keeping the system pressure in vacuum state for at least 1 hour; the temperature of the post-solid state polymerization is not lower than the termination temperature of the pre-solid state polymerization.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: The invention relates to a novel process, novel process step(s) and novel intermediate(s) useful for the preparation of 1,4-disubstituted pyridazine compounds, such as 5-(1H-Pyrazol-4-yl)-2-(6-((2,2,6,6-tetramethylpiperidin-4-yl)oxy)pyridazin-3-yl)phenol.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A terminal device interaction method and apparatus are disclosed. In the method, a first terminal device receives a first sharing operation for a first common application APP (S11), the first terminal device transmits a first sharing instruction based on the first sharing operation (S12), and the first terminal device receives and displays information about first data transmitted by a second terminal device (S13); the first terminal device transmits a second sharing instruction (S14); and the first terminal device receives first target data that is transmitted by the second terminal device based on the second sharing instruction (S15).

Abstract: The present invention relates to a method of synthesizing a compound of formula (I) also referred to as 4-(((2S,4S)-(4-ethoxy-1-(((5-methoxy-7-methyl-1H-indol-4-yl)methyl)piperidin-2-yl))benzoic acid, or a pharmaceutically acceptable salt thereof, and/or intermediates thereof, their use as pharmaceuticals and pharmaceutical compositions and the use of intermediates for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: A message display method includes receiving, by a terminal device, a message from a second application (APP) when displaying an interface of a first APP, wherein the first APP and the second APP are different applications (APPs), displaying the message in a pop-up window display manner on the interface, accepting a first operation comprising sliding, double-taping, or touching and holding the pop-up window of the message, and displaying, in response to the first operation, content of the message in a split-screen display manner.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: A method for calculating a maximum output current of multiple thyristor converters connected in parallel, step 1: setting an operating time t; step 2: assuming a trigger angle; step 3: calculating a maximum output current of a single converter according to an output current model for the single converter; step 4: equally dividing a total output DC current into a plurality of parts according to a working duration of six converter bridge arms, thereby obtaining a pulse operating current of a single bridge arm; step 5: checking whether a present junction temperature of a thyristor is below a limiting temperature based on a thermal resistance model for the thyristor, if no, correcting the trigger angle, and repeating step 2 to step 5 until the condition is met; step 6: giving a present trigger angle; and step 7: giving a maximum output current of multiple converters connected in parallel.