Abstract: A power device includes a mainboard and a power conversion module. The mainboard includes a first side and a third side opposite each other along a first direction, a second side and a fourth side opposite each other along a second direction, the first direction is perpendicular to the second direction. The power conversion module includes a primary-side circuit board and a secondary-side module. The secondary-side module includes a secondary-side circuit board, and the primary-side circuit board, the mainboard and the secondary-side circuit board being electrically connected, the primary-side circuit board and the secondary-side circuit board are spatially separated. The secondary-side module further includes secondary-side element and a first magnetic core element, wherein the secondary-side element and the first magnetic core element are disposed on the secondary-side circuit board along a third direction perpendicular to the first direction and the second direction.

Abstract: The present disclosure discloses a method for quantifying a bearing capacity of foundation containing shallow-hidden spherical cavities, comprising: in Step 1, constructing a spatial axisymmetric calculation model for stability analysis of the foundation containing shallow-hidden spherical cavities; in Step 2, solving the model to obtain a general solution which reflects the spatial stress distribution of surrounding rock containing shallow-hidden spherical cavities; in Step 3, obtain a mathematical expression by derivation for calculating the bearing capacity of the foundation containing shallow-hidden spherical cavities; and in Step 4: completing the determination of the foundation bearing capacity. Benefits: This method has many advantages such as comprehensive consideration, high accuracy and reliability of calculation results, and may provide the scientific basis for the development of prevention and control against the instability of the foundation containing shallow-hidden cavities.

Abstract: The present disclosure provides a pixel driving circuit and a display panel. The pixel drive circuit includes: a data writing sub-circuit, a threshold compensation sub-circuit, a driving sub-circuit and a storage sub-circuit, the data writing sub-circuit includes a fourth transistor, which includes a first electrode connected with a data line, a second electrode connected with a first terminal of the driving sub-circuit, and a control electrode connected with a first scan signal line, and the fourth transistor is an oxide thin film transistor; the threshold compensation sub-circuit is configured to compensate a threshold voltage of the driving sub-circuit in response to a second scan signal; the storage sub-circuit is configured to store a data voltage signal; the driving sub-circuit is configured to provide a driving current for a light emitting device to be driven according to voltages of the first terminal and a control terminal thereof.

Abstract: A method, computer program product and system are provided for preloading debug information based on the presence of incremental source code files. Based on parsed input parameters to a source code debugger, a source code repository and a local storage area are searched for an incremental file. In response to the incremental file being located, a preload indicator in the incremental file, which is a source code file, is set. Based on the preload indicator being set, debug symbol data from the incremental file is merged to a preload symbol list. In response to receiving a command to examine the debug symbol data from the incremental file, the preload symbol list is searched for the requested debug symbol data.

Abstract: Provided are a channel configuration method and terminal, a storage medium and an electronic device. The method includes: determining that multiple physical channels overlap in a time domain; and determining a physical channel for carrying information or data in the multiple physical channels, wherein the determined physical channel is a Physical Uplink Control Channel (PUCCH), and determining a physical channel comprises: among the multiple physical channels, processing a physical channel with earlier first symbol before a physical channel with later first symbol, and when two or more physical channels in the multiple physical channels have the same first symbol, processing a physical channel with a larger number of symbols before a physical channel with a smaller number of symbols.

Abstract: Disclosed is a flame-retardant HIPS material and a preparation method thereof, comprising the following components: 90 parts to 67 parts of a HIPS resin; 8 parts to 15 parts of a brominated flame retardant; and 3 parts to 7 parts of an auxiliary flame retardant; wherein the auxiliary flame retardant is a 1,3,5-triazine compound. In the present invention, a synergistic compounding of the brominated flame retardant and the auxiliary flame retardant effectively reduces an amount of the brominated flame retardant, and a stable UL 94 (1.5 mm) V-0 flame-retardant class can be achieved. Compared with the existing brominated flame-retardant HIPS, the present invention has a low halogen content, low gas, and high cost performance ratio, which avoids excessive acid gas from forming air lines on the surface of parts, has a good appearance.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present application provides a cathode plate, a secondary battery, a battery module, a battery pack, and an electric device. The cathode plate includes: a current collector, a conductive coating, and a cathode active layer. The conductive coating is arranged on at least one surface of the current collector. The conductive coating includes a conductive agent having a weight content of 20% to 50% and a binder having a weight content of 50%˜80%. The cathode active layer is arranged on a surface of the conductive coating away from the current collector, and a cathode active material in the cathode active layer is at least one of a lithium manganate-based cathode material, a ternary cathode material, and a quaternary cathode material.

Abstract: Provided are a response receiving and sending method, a retransmission method, a communication device, and a storage medium. The method includes: sending a transport block to a first communication device through a pre-configured period resource, and receiving a correct response corresponding to the transport block on a pre-configured correct response resource.

Abstract: The disclosure relates to a synthesis method of long carbon chain semi-aromatic nylon. The synthesis method comprises the following steps: mixing a wet powdery nylon salt, an antioxidant, a catalyst, a surfactant and pellets, and carrying out a one-step solid state polymerization under dynamic mixing to obtain a powdery nylon; under dynamic mixing, enabling the pellets to promote the stirring and mixing of the material and reducing material adhesion to the wall; the one-step solid state polymerization comprises a pre-solid state polymerization and a post-solid state polymerization; in the pre-solid state polymerization, ensuring the nylon salt and the prepolymer not to be molten; in the post-solid state polymerization, gradually reducing the system pressure to vacuum, and keeping the system pressure in vacuum state for at least 1 hour; the temperature of the post-solid state polymerization is not lower than the termination temperature of the pre-solid state polymerization.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: The invention relates to a novel process, novel process step(s) and novel intermediate(s) useful for the preparation of 1,4-disubstituted pyridazine compounds, such as 5-(1H-Pyrazol-4-yl)-2-(6-((2,2,6,6-tetramethylpiperidin-4-yl)oxy)pyridazin-3-yl)phenol.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A terminal device interaction method and apparatus are disclosed. In the method, a first terminal device receives a first sharing operation for a first common application APP (S11), the first terminal device transmits a first sharing instruction based on the first sharing operation (S12), and the first terminal device receives and displays information about first data transmitted by a second terminal device (S13); the first terminal device transmits a second sharing instruction (S14); and the first terminal device receives first target data that is transmitted by the second terminal device based on the second sharing instruction (S15).

Abstract: The present invention relates to a method of synthesizing a compound of formula (I) also referred to as 4-(((2S,4S)-(4-ethoxy-1-(((5-methoxy-7-methyl-1H-indol-4-yl)methyl)piperidin-2-yl))benzoic acid, or a pharmaceutically acceptable salt thereof, and/or intermediates thereof, their use as pharmaceuticals and pharmaceutical compositions and the use of intermediates for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A message display method includes receiving, by a terminal device, a message from a second application (APP) when displaying an interface of a first APP, wherein the first APP and the second APP are different applications (APPs), displaying the message in a pop-up window display manner on the interface, accepting a first operation comprising sliding, double-taping, or touching and holding the pop-up window of the message, and displaying, in response to the first operation, content of the message in a split-screen display manner.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: A method for calculating a maximum output current of multiple thyristor converters connected in parallel, step 1: setting an operating time t; step 2: assuming a trigger angle; step 3: calculating a maximum output current of a single converter according to an output current model for the single converter; step 4: equally dividing a total output DC current into a plurality of parts according to a working duration of six converter bridge arms, thereby obtaining a pulse operating current of a single bridge arm; step 5: checking whether a present junction temperature of a thyristor is below a limiting temperature based on a thermal resistance model for the thyristor, if no, correcting the trigger angle, and repeating step 2 to step 5 until the condition is met; step 6: giving a present trigger angle; and step 7: giving a maximum output current of multiple converters connected in parallel.