Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: A method for calculating a maximum output current of multiple thyristor converters connected in parallel, step 1: setting an operating time t; step 2: assuming a trigger angle; step 3: calculating a maximum output current of a single converter according to an output current model for the single converter; step 4: equally dividing a total output DC current into a plurality of parts according to a working duration of six converter bridge arms, thereby obtaining a pulse operating current of a single bridge arm; step 5: checking whether a present junction temperature of a thyristor is below a limiting temperature based on a thermal resistance model for the thyristor, if no, correcting the trigger angle, and repeating step 2 to step 5 until the condition is met; step 6: giving a present trigger angle; and step 7: giving a maximum output current of multiple converters connected in parallel.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: A system for producing high-quality gas includes a heat carrier hoist, a coke feeder, a heat carrier heating furnace, a gas mixer, a high-temperature induced draft fan, a heat carrier storage tank, a dryer, a hopper, a concentrating solar collection pyrolysis-gasification reactor having a double-tube structure, a three-phase separator and a coke collecting bin. The system may use an adjustable concentrating solar collection technology in combination with a heat carrier circulation heating process, so as to effectively solve heat requirements of the waste pyrolysis and gasification process, reduce the waste material consumption caused by energy supply, and improve the effective utilization of raw materials.

Abstract: The present invention relates to a method of synthesizing a compound of formula (I) also referred to as 4-(((2S,4S)-(4-ethoxy-1-(((5-methoxy-7-methyl-1H-indol-4-yl)methyl)piperidin-2-yl))benzoic acid, or a pharmaceutically acceptable salt thereof, and/or intermediates thereof, their use as pharmaceuticals and pharmaceutical compositions and the use of intermediates for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: The disclosure relates to a synthesis method of long carbon chain semi-aromatic nylon. The synthesis method comprises the following steps: mixing a wet powdery nylon salt, an antioxidant, a catalyst, a surfactant and pellets, and carrying out a one-step solid state polymerization under dynamic mixing to obtain a powdery nylon; under dynamic mixing, enabling the pellets to promote the stirring and mixing of the material and reducing material adhesion to the wall; the one-step solid state polymerization comprises a pre-solid state polymerization and a post-solid state polymerization; in the pre-solid state polymerization, ensuring the nylon salt and the prepolymer not to be molten; in the post-solid state polymerization, gradually reducing the system pressure to vacuum, and keeping the system pressure in vacuum state for at least 1 hour; the temperature of the post-solid state polymerization is not lower than the termination temperature of the pre-solid state polymerization.

Abstract: A method for calculating a maximum output current of multiple thyristor converters connected in parallel, step 1: setting an operating time t; step 2: assuming a trigger angle; step 3: calculating a maximum output current of a single converter according to an output current model for the single converter; step 4: equally dividing a total output DC current into a plurality of parts according to a working duration of six converter bridge arms, thereby obtaining a pulse operating current of a single bridge arm; step 5: checking whether a present junction temperature of a thyristor is below a limiting temperature based on a thermal resistance model for the thyristor, if no, correcting the trigger angle, and repeating step 2 to step 5 until the condition is met; step 6: giving a present trigger angle; and step 7: giving a maximum output current of multiple converters connected in parallel.

Abstract: The present invention relates to a method of synthesizing a compound of formula (I) also referred to as 4-((2S,4S)-(4-ethoxy-1-((5-methoxy-7-methyl-1H-indol-4-yl)methyl)piperidin-2-yl))benzoic acid, or a pharmaceutically acceptable salt thereof, and/or intermediates thereof, their use as pharmaceuticals and pharmaceutical compositions and the use of intermediates for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

Abstract: An information processing method, a device, a system, and a storage medium. The information processing method includes: an AI camera first obtains real-time data in a unmanned retail scenario and performs a front-end processing on the real-time data based on a neural network model, where the front-end processing includes any one or more of commodity identifying and human body monitoring, and then transmits a result of the front-end processing to a server, where the result of the front-end processing is used to trigger the server to perform face recognition and/or determine a flow direction of a commodity according to the result of the front-end processing. The cost of the entire unmanned retail distributed system and the pressure on data transmission bandwidth can be reduced, and system scalability as well as the performance of the solution to the unmanned retail can be improved effectively.

Abstract: The present invention relates to a method of synthesizing a compound of formula (I) also referred to as 4-((2S,4S)-(4-ethoxy-1-((5-methoxy-7-methyl-1/-/-indol-4-yl)methyl)piperidin-2-yl))benzoic acid, or a pharmaceutically acceptable salt thereof, and/or intermediates thereof, their use as pharmaceuticals and pharmaceutical compositions and the use of intermediates for preparing a compound of formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.

Abstract: The present application provides a method, an apparatus, a device and a system for processing commodity identification and a storage medium, where the method includes: receiving image information transmitted by a camera apparatus and a distance signal transmitted by a distance sensor corresponding to the camera apparatus; determining a start frame and an end frame for a pickup behavior of a user according to the image information and the distance signal; and determining, according to the start frame and the end frame for the pickup behavior of the user, information of a commodity taken by the user. By performing a commodity identification on the start frame and the end frame for the pickup behavior of the user, and determining the information of the commodity taken by the user, commodity identification efficiency is effectively improved.

Abstract: A system for producing high-quality gas includes a heat carrier hoist, a coke feeder, a heat carrier heating furnace, a gas mixer, a high-temperature induced draft fan, a heat carrier storage tank, a dryer, a hopper, a concentrating solar collection pyrolysis-gasification reactor having a double-tube structure, a three-phase separator and a coke collecting bin. The system may use an adjustable concentrating solar collection technology in combination with a heat carrier circulation heating process, so as to effectively solve heat requirements of the waste pyrolysis and gasification process, reduce the waste material consumption caused by energy supply, and improve the effective utilization of raw materials.

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.