Patents by Inventor Peng-Fu Hsu

Peng-Fu Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220351974
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: July 7, 2022
    Publication date: November 3, 2022
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Publication number: 20220293503
    Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 15, 2022
    Inventors: Chun-Hsien HUANG, Peng-Fu HSU, Yu-Syuan TSAI, Min-Hsiu HUNG, Chen-Yuan KAO, Ken-Yu CHANG, Chun-I TSAI, Chia-Han LAI, Chih-Wei CHANG, Ming-Hsing TSAI
  • Patent number: 11398382
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: July 26, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Publication number: 20210328036
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • Patent number: 11056567
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: July 6, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • Publication number: 20210028021
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 28, 2021
    Inventors: MOATAZ BELLAH MOUSA, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Publication number: 20210005723
    Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Fu Tang, Peng-Fu Hsu, Michael Eugene Givens, Qi Xie
  • Patent number: 10886123
    Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: January 5, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Moataz Bellah Mousa, Peng-Fu Hsu
  • Patent number: 10847371
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: November 24, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Patent number: 10818758
    Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: October 27, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Fu Tang, Peng-Fu Hsu, Michael Eugene Givens, Qi Xie
  • Publication number: 20200161438
    Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
    Type: Application
    Filed: November 16, 2018
    Publication date: May 21, 2020
    Inventors: Fu Tang, Peng-Fu Hsu, Michael Eugene Givens, Qi Xie
  • Publication number: 20190348273
    Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: April 29, 2019
    Publication date: November 14, 2019
    Inventors: Fu Tang, Delphine Longrie, Peng-Fu Hsu
  • Publication number: 20190348515
    Abstract: Methods for depositing a doped metal carbide film on a substrate are disclosed. The methods may include: depositing a doped metal carbide film on a substrate utilizing at least one deposition cycle of a cyclical deposition process; and contacting the doped metal carbide film with a plasma generated from a hydrogen-containing gas. Semiconductor device structures including a doped metal carbide film formed by the methods of the disclosure are also disclosed.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 14, 2019
    Inventors: Dong Li, Peng-Fu Hsu, Petri Raisanen, Moataz Bellah Mousa, Ward Johnson, Xichong Chen
  • Publication number: 20190304790
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: March 18, 2019
    Publication date: October 3, 2019
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Publication number: 20180350588
    Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
    Type: Application
    Filed: May 9, 2018
    Publication date: December 6, 2018
    Inventors: Petri Raisanen, Moataz Bellah Mousa, Peng-Fu Hsu
  • Patent number: 9263445
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: February 16, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Fu Hsu, Kang-Cheng Lin, Kuo-Tai Huang
  • Publication number: 20150021705
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.
    Type: Application
    Filed: October 6, 2014
    Publication date: January 22, 2015
    Inventors: Peng-Fu Hsu, Kang-Cheng Lin, Kuo-Tai Huang
  • Patent number: 8853068
    Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a capping layer over the high-k dielectric layer in the first region, forming a first metal layer over capping layer in the first region and over the high-k dielectric in the second region, thereafter, forming a first gate stack in the first region and a second gate stack in the second region, protecting the first metal layer in the first gate stack while performing a treatment process on the first metal layer in the second gate stack, and forming a second metal layer over the first metal layer in the first gate stack and over the treated first metal layer in the second gate stack.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: October 7, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Fu Hsu, Kang-Cheng Lin, Kuo-Tai Huang
  • Patent number: 8836038
    Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: September 16, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yong-Tian Hou, Peng-Fu Hsu, Jin Ying, Kang-Cheng Lin, Kuo-Tai Huang, Tze-Liang Lee
  • Patent number: 8536660
    Abstract: A semiconductor structure includes a first MOS device including a first gate, and a second MOS device including a second gate. The first gate includes a first high-k dielectric over a semiconductor substrate; a second high-k dielectric over the first high-k dielectric; a first metal layer over the second high-k dielectric, wherein the first metal layer dominates a work-function of the first MOS device; and a second metal layer over the first metal layer. The second gate includes a third high-k dielectric over the semiconductor substrate, wherein the first and the third high-k dielectrics are formed of same materials, and have substantially a same thickness; a third metal layer over the third high-k dielectric, wherein the third metal layer and the second metal layer are formed of same materials, and have substantially a same thickness; and a fourth metal layer over the third metal layer.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: September 17, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Peng-Fu Hsu, Yong-Tian Hou, Ssu-Yi Li, Kuo-Tai Huang, Mong Song Liang