Abstract: A language identifying device includes: a neural network responsive to an input of a speech signal, for outputting a score for each of a plurality of languages indicating that the speech represented by the speech signal is the speech of the corresponding language; a selecting device for selecting, among the scores output by the neural network, scores of a smaller number of languages; a normalizing device for normalizing the scores selected by the selecting device; a determining device for determining whether the maximum of the normalized scores normalized by the normalizing device is equal to or higher than a threshold; and a language deciding device, responsive to a positive determination by the determining device, for selectively performing a process of deciding the language corresponding to the maximum of the scores as the language of the speech represented by the speech signal, or a process of discarding outputs of the score selecting device.

Abstract: A method is described for full waveform inversion using a b-spline projection that produces an earth model that can be used for seismic imaging. The method may be executed by a computer system.

Abstract: The present invention relates to a method for synthesizing artepillin C and a synthetic method for synthesizing an intermediate compound for use in preparing artepillin C. The structural formula of artepillin C is shown in the following formula (IV), and the intermediate compound is shown in the following formula (II). The synthesis method includes the following steps: a first reaction step: in the presence of a base initiator, a compound A shown in formula I and 3,3-dimethylallyl bromide are mixed, the reaction continues for a first reaction time and is stopped to generate an intermediate of artepillin C shown in formula II; and a second reaction step: the intermediate of artepillin C is dissolved in an aqueous alcohol solution and then mixed with an alkali metal salt, and the reaction continues for a second reaction time to generate artepillin C.

Abstract: The knockdownable bed includes a frame having a pair of side frame rails transversely spaced, longitudinally aligned and arranged parallel to each other; and at least one connection bar detachably mounted onto the pair of side frame rails; and a plurality of slats longitudinally spaced, transversely aligned on the frame. Each of the pair of side frame rails is foldable.

Abstract: A display device and a method for manufacturing the same are provided. The display device has a display area and a non-display area and includes: a substrate; a driving circuit layer including pins located in the non-display area; a light-emitting device layer; a thin film encapsulation layer including a first inorganic encapsulation layer; a touch sensing unit including a touch insulation layer; and a protective layer. Projections of the first inorganic encapsulation layer and the protective layer onto the substrate have coincident edges and do not cover the pins; or projections of the first inorganic encapsulation layer and the touch insulation layer onto the substrate have same outlines and do not overlap with the pins.

Abstract: Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3-hexafluoropropane (C3H2F6), 1,1,2,2,3,3-hexafluoropropane (iso-C3H2F6), 1,1,1,2,3,3,3-heptafluoropropane (C3HF7), and 1,1,1,2,2,3,3-heptafluoropropane (iso-C3HF7), wherein the first etching layer comprises a material different from that of the second etching layer.

Abstract: Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N?C—R; (N@C—)—(R)—(—C?N); Rx[-C?N(Rz)]y; and R(3-a)-N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.

Abstract: The present disclosure provides a display device, including: an organic encapsulation layer, an area enclosed by a boundary of the organic encapsulation layer being a first area; and a first dam surrounding the display area, a second area being arranged between the first area and the first dam. A first touch lead is arranged in the second area, and a first protrusion is arranged between the first touch lead and the substrate. For the display device provided by the present disclosure, an actual width of the first touch lead is larger than a width of its projection onto the substrate. In a case of occupying a same bottom area, a resistance of the first touch lead in the present disclosure is greatly reduced, which greatly improves driving ability of the IC.

Abstract: The present disclosure provides a display device, including: an organic encapsulation layer, an area enclosed by a boundary of the organic encapsulation layer being a first area; and a first dam surrounding the display area, a second area being arranged between the first area and the first dam. A first touch lead is arranged in the second area, and a first protrusion is arranged between the first touch lead and the substrate. For the display device provided by the present disclosure, an actual width of the first touch lead is larger than a width of its projection onto the substrate. In a case of occupying a same bottom area, a resistance of the first touch lead in the present disclosure is greatly reduced, which greatly improves driving ability of the IC.

Abstract: A method of an embodiment includes (i) a step of supplying a first gas to a chamber, wherein the first gas is perfiuorotetraglyme gas, and (ii) a step of generating plasma of a second gas for etching of a porous film in order to etch the porous film at the same time as the step of supplying a first gas or after the step of supplying a first gas. Partial pressure of the first gas in the chamber or pressure of the first gas in the chamber when only the first gas is supplied to the chamber is higher than critical pressure causing capillary condensation of the first gas in the porous film and is lower than saturated vapor pressure of the first gas at a temperature of the workpiece during execution of the step of supplying a first gas.

Abstract: A display device and a method for manufacturing the same are provided. The display device has a display area and a non-display area and includes: a substrate; a driving circuit layer including pins located in the non-display area; a light-emitting device layer; a thin film encapsulation layer including a first inorganic encapsulation layer; a touch sensing unit including a touch insulation layer; and a protective layer. Projections of the first inorganic encapsulation layer and the protective layer onto the substrate have coincident edges and do not cover the pins; or projections of the first inorganic encapsulation layer and the touch insulation layer onto the substrate have same outlines and do not overlap with the pins.

Abstract: A data accessing method of a switch for transmitting data packets between a first source node and a first target node and between a second source node and a second target node includes: transmitting a data packet to the switch via at least one of the first communication link and the third communication link and configuring the control unit to store information contained in the data packet into the storage unit; and retrieving the information contained in the data packet from the storage unit via at least one of the second communication link and the fourth communication link. The first source node, the second source node, the first target node and the second target node share the same storage blocks.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Disclosed are systems and methods for supplying a F3NO-free FNO-containing gas and systems and methods for etching using the F3NO-free FNO-containing gas. The system comprises a NiP coated steel cylinder with a polished inner surface to store the F3NO-free FNO-containing gas, a cylinder valve to release the F3NO-free FNO-containing gas from the cylinder, a manifold assembly, including a pressure regulator and line components to deliver the F3NO-free FNO-containing gas to a target reactor. The pressure regulator de-pressurizes the F3NO-free FNO-containing gas in the manifold assembly thereby dividing the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator. A gaseous composition comprises F3NO-free FNO gas containing less than approximately 1% F3NO impurity by volume and an inert gas being capable of suppressing the concentration of F3NO impurity in the F3NO-free FNO gas.

Abstract: The Invention relates to an atmospheric-pressure acetylene carburizing furnace, comprises a reaction chamber, an acetylene intake duct, an exhaust gas duct, a control and metering apparatus, an exhaust gas measurement apparatus, and a computer controller. The computer controller calculates a total amount of carbon in the furnace and an enrichment rate of a workpiece, and adjusts an acetylene intake volume according to the calculation result until process requirements are met. The Invention realizes carburizing with acetylene under atmospheric pressure and reduces the usage costs while improving the equipment efficiency.

Abstract: Disclosed are a high-pressure liquid-state or supercritical-state quenching apparatus, comprising a working chamber, a heating device, a cooling device, a vacuum pump set, a storage tank, a buffer tank, a gas booster, a first pressure gauge, and a temperature controller. According to the Invention, vacuum liquid-state or supercritical-state quenching is implemented, which satisfies a quenching requirement of a large workpiece, and can also achieve an effect of high-pressure gas quenching. In addition, clean heat treatment is implemented, which avoids waste gas and waste water pollution, and is energy-saving and environmentally-friendly heat treatment.

Abstract: A porous film sealing method and porous film sealing material are provided to seal an object to be sealed that has a porous film. The porous film sealing method of the present invention is characterized by including a first step that supplies a first material to a treatment vessel in which is stored an object to be treated that has a porous film, and the first material includes a non-aromatic fluorocarbon having 6 or more carbon atoms.

Abstract: Methods for isotropic etching at least a portion of a silicon-containing layer on a sidewall of high-aspect-ratio (HAR) apertures formed on a substrate in a reaction chamber are disclosed. The HAR aperture formed by plasma etching a stack of alternating layers of a first silicon-containing layer and a second silicon-containing layer, the second silicon-containing layer is different from the first silicon-containing layer. The method comprising the steps of: a) introducing a fluorine containing etching gas selected from the group consisting of nitrosyl fluoride (FNO), trifluoroamine oxide (F3NO), nitryl fluoride (FNO2) and combinations thereof into the reaction chamber; and b) removing at least a portion of the second silicon-containing layers by selectively etching the second silicon-containing layers versus the first silicon-containing layers with the fluorine containing etching gas to produce recesses between the first silicon-containing layers on the sidewall of the HAR aperture.

Abstract: A densified, high-strength metallic component is manufactured by: binder jet additive manufacture (BJAM) printing a powder blend to form a printed part; and super solidus sintering the printed part to form the metallic component, which may then be heat treated. The powder blend comprises a blend of water atomized base iron powder and a high-carbon master ferroalloy powder. The high-carbon ferroalloy powder introduces high concentrations of carbon into a powder blend that is readily BJAM printable.

Abstract: Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N?C—R; (N@C—)—(R)—(—C?N); Rx[-C?N(Rz)]y; and R(3-a)-N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.