Abstract: An optoelectronic lighting device includes a carrier, a plurality of light-emitting optoelectronic components arranged on an upper side of the carrier, and at least one layer of a hydrophobic aerogel that protects the plurality of light-emitting optoelectronic components from influences of moisture. A video wall module includes the optoelectronic light device. A signal transmitter for a light signaling installation includes the optoelectronic light device.

Abstract: An optoelectronic component includes a housing including a base section and a cover section that delimit an interior of the housing, wherein an optoelectronic semiconductor chip is arranged on the base section, the cover section is formed by an optical element, and a reflective element including openings is arranged between the optoelectronic semiconductor chip and an outer side of the optical element.

Abstract: In a method, a spectral performance of the electromagnetic radiation is chosen in such a way that an integral of the spectral performance across a wave length interval between 380 nm and 780 nm has a nominal value, an integral of the spectral performance across a wave length interval between 420 nm and 460 nm has a first value, an integral of the spectral performance across a wave length interval between 510 nm and 550 nm has a second value, and an integral of the spectral performance across a wave length interval between 580 nm and 620 nm has a third value. The ratios of these values are chosen to be within certain ranges.

Abstract: In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

Abstract: The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=?qR(?)·S(?)d?·texp, G=?qG(?)·S(?)d?·texp, B=?qB(?)·S(?)d?·texp, wherein qR(?), qG(?), and qB(?) are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S(?) is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and ? designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least o

Abstract: A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Abstract: Described is a holographic film (100) whose transmission and/or reflection properties vary periodically along at least one of its directions of principal extent, said film being designed for at least partial transmission (22, 28) of light (20, 26) of at least one first wavelength range that is irradiated from a multiplicity of periodically disposed illuminants (200) and that impinges on the holographic film (100). Also described are a lighting means (300), a backlighting means and a method for producing a holographic film (100).

Abstract: The invention specifies a radiation-emitting apparatus (10) having a separating optics system (3) which is arranged downstream of a first radiation-emitting region (1a) and a second radiation-emitting region (1b) in the emission direction and which is suitable for separating radiation (11) which is emitted from the first radiation-emitting region (1a) and radiation (12) which is emitted from the second radiation-emitting region (1b) from one another. A secondary optics system (4) is arranged downstream of the separating optics system (3), wherein the radiation (11) which is emitted from the first radiation-emitting region (1a) is associated with a first region (4a) of the secondary optics system (4) and the radiation (12) which is emitted from the second radiation-emitting region (1b) is associated with a second region (4b) of the secondary optics system (4) which is separate from the first region (4a). The invention also specifies uses for an apparatus (10) of this kind.

Abstract: An optoelectronic semiconductor component comprising: a main body (100) having a recess; (102), a first optoelectronic element (104) and a second optoelectronic element; (106) a surface structured element; (110) and a filling compound (112) embedding the first optoelectronic element (104) and the second optoelectronic element (106) in the recess, wherein the surface structured element configures a surface of the filling compound (112) such that at least two domed regions (114, 116, 118) of the surface are formed.

Abstract: In a method, a spectral performance of the electromagnetic radiation is chosen in such a way that an integral of the spectral performance across a wave length interval between 380 nm and 780 nm has a nominal value, an integral of the spectral performance across a wave length interval between 420 nm and 460 nm has a first value, an integral of the spectral performance across a wave length interval between 510 nm and 550 nm has a second value, and an integral of the spectral performance across a wave length interval between 580 nm and 620 nm has a third value. The ratios of these values are chosen to be within certain ranges.

Abstract: In at least one embodiment of the surface light guide, the surface light guide includes at least one scattering element for scattering light. A decoupling coefficient is caused by the scattering element. The decoupling coefficient is set in a varying fashion along a main light-guiding direction. In a direction perpendicular to the main sides of the surface light guide, the opacity value is no more than 0.10, the transmission coefficient is at least 0.75 and the quotient of the minimum light density and maximum light density seen over a continuous emitting area of at least one of the main sides is at least 0.75.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) has at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: A light-emitting diode includes at least one light-emitting diode chip, a carrier for the at least one light-emitting diode chip, and at least one control device integrated into the carrier, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices includes a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light-emitting diode chip.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) comprises at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: A method proposed for manufacturing a radiation-emitting component in which a field distribution of a near field in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.

Abstract: A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: The invention relates to a lighting device (10), comprising a multistage lens (1, 2, 3), which spectrally and spatially collimates the transmitted light (5, 6). The illumination device is particularly well suited for use in a display unit.