Abstract: A light-emitting diode includes at least one light-emitting diode chip, a carrier for the at least one light-emitting diode chip, and at least one control device integrated into the carrier, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices includes a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light-emitting diode chip.

Abstract: In at least one embodiment of the luminaire (1), it includes at least one optoelectronic semiconductor device (4) and at least one primary optical unit (11) which is disposed downstream of the semiconductor device (4) and is spaced apart therefrom. Furthermore, the luminaire (1) comprises a secondary optical unit (22) and/or a tertiary optical unit (33) which is/are disposed downstream of the primary optical unit (11). A proportion of at least 30% of radiation emitted by the semiconductor device (4) passes to the secondary optical unit (22) and/or to the tertiary optical unit (33). Furthermore, the secondary optical unit (22) and/or the tertiary optical unit (33) is/are arranged for small-angle scattering of the radiation emitted by the semiconductor device (4).

Abstract: A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices including a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light emitting-diode chip.

Abstract: An optical component comprises a carrier plate (1) having a first main surface (2) and a second main surface (3) facing away from the first main surface (2), and a first lens structure (4) on the first main surface (2), wherein the first lens structure (4) has at least a first lens element (41) having a first polygonal form and a second lens element (42) having a second polygonal form, the first lens structure (4) completely covers the first main surface (2), and the first lens element (41) and the second lens element (42) are non-congruent with respect to one another and/or differ in terms of their orientation on the first main surface (2) of the carrier plate (1).

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements and a concentrator which is a hollow body having a reflective inner area, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure including a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon projection of the contact structure into a plane of the optical structure, wherein the concentrator has an aperture on a side facing the semiconductor chip that is smaller than a side facing away from the semiconductor chip, and the optical structure is arranged on a side of the concentrator facing the semiconductor chip.

Abstract: The invention specifies a radiation-emitting apparatus (10) having a separating optics system (3) which is arranged downstream of a first radiation-emitting region (1a) and a second radiation-emitting region (1b) in the emission direction and which is suitable for separating radiation (11) which is emitted from the first radiation-emitting region (1a) and radiation (12) which is emitted from the second radiation-emitting region (1b) from one another. A secondary optics system (4) is arranged downstream of the separating optics system (3), wherein the radiation (11) which is emitted from the first radiation-emitting region (1a) is associated with a first region (4a) of the secondary optics system (4) and the radiation (12) which is emitted from the second radiation-emitting region (1b) is associated with a second region (4b) of the secondary optics system (4) which is separate from the first region (4a). The invention also specifies uses for an apparatus (10) of this kind.

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon a projection of the contact structure into the plane of the optical structure.

Abstract: An optoelectronic semiconductor component for a lighting device including a carrier, at least one optoelectronic semiconductor chip mounted on the carrier and which includes a radiation passage face remote from the carrier, by which a plane is defined, and a lens comprising 1) a radiation exit face, which, relative to a height above the plane, exhibits a minimum, in particular in a central region, and at least two local maxima, and at least two local maxima, and 2) at least two connecting embankments which each extend from one of the maxima to another of the maxima, and each connecting embankment comprises a saddle point higher than the minimum and lower than the maxima adjoining the connecting embankment.

Abstract: An optoelectronic device includes at least one luminescence diode chip which emits electromagnetic radiation during operation of the optoelectronic device, and at least one shield against stray radiation which laterally surrounds the luminescence diode chip only in places, wherein each shield is integral with a component of the optoelectronic device.

Abstract: The invention relates to a lighting device (10), comprising a multistage lens (1, 2, 3), which spectrally and spatially collimates the transmitted light (5, 6). The illumination device is particularly well suited for use in a display unit.

Abstract: A method of producing a radiation-emitting component is provided. A far field radiation pattern is predetermined. From the predetermined radiation pattern a refractive index profile for the radiation-emitting component is determined in a direction extending perpendicularly to a main emission direction of the component. A structure is determined for the component, such that the component includes the previously determined refractive index profile. The component is configured according to the previously determined structure.

Abstract: A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Abstract: In at least one embodiment of the surface light guide, the surface light guide includes at least one scattering element for scattering light. A decoupling coefficient is caused by the scattering element. The decoupling coefficient is set in a varying fashion along a main light-guiding direction. In a direction perpendicular to the main sides of the surface light guide, the opacity value is no more than 0.10, the transmission coefficient is at least 0.75 and the quotient of the minimum light density and maximum light density seen over a continuous emitting area of at least one of the main sides is at least 0.75.

Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

Abstract: In at least one embodiment of the luminaire (1), it includes at least one optoelectronic semiconductor device (4) and at least one primary optical unit (11) which is disposed downstream of the semiconductor device (4) and is spaced apart therefrom. Furthermore, the luminaire (1) comprises a secondary optical unit (22) and/or a tertiary optical unit (33) which is/are disposed downstream of the primary optical unit (11). A proportion of at least 30% of radiation emitted by the semiconductor device (4) passes to the secondary optical unit (22) and/or to the tertiary optical unit (33). Furthermore, the secondary optical unit (22) and/or the tertiary optical unit (33) is/are arranged for small-angle scattering of the radiation emitted by the semiconductor device (4).