Abstract: An optoelectronic semiconductor component for a lighting device including a carrier, at least one optoelectronic semiconductor chip mounted on the carrier and which includes a radiation passage face remote from the carrier, by which a plane is defined, and a lens comprising 1) a radiation exit face, which, relative to a height above the plane, exhibits a minimum, in particular in a central region, and at least two local maxima, and at least two local maxima, and 2) at least two connecting embankments which each extend from one of the maxima to another of the maxima, and each connecting embankment comprises a saddle point higher than the minimum and lower than the maxima adjoining the connecting embankment.

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (

Abstract: A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of the at least one control devices, each of the at least one control devices including a data storage device in which brightness data for each light-emitting diode chip which is connected to the control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for the light emitting-diode chip.

Abstract: An optoelectronic semiconductor component comprising: a main body (100) having a recess; (102), a first optoelectronic element (104) and a second optoelectronic element; (106) a surface structured element; (110) and a filling compound (112) embedding the first optoelectronic element (104) and the second optoelectronic element (106) in the recess, wherein the surface structured element configures a surface of the filling compound (112) such that at least two domed regions (114, 116, 118) of the surface are formed.

Abstract: A surface emitting semiconductor body with a vertical emission direction is specified, which is provided for operation with a resonator and comprises a semiconductor layer sequence with an active region, wherein the semiconductor body is embodied in wavelength-stabilizing fashion in such a way that a peak wavelength of the radiation generated in the active region, in a predetermined operating range of the semiconductor body, is stabilized with respect to changes in the output power of the radiation generated in the active region.

Abstract: A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser (2) with a semiconductor body (4). The semiconductor body (4) comprises a first and a second planar surface (12, 14). The semiconductor body (4) comprises between the planar surfaces at least one active layer (10) for generating radiation. The semiconductor body (4) has, for coupling out the radiation from the active layer (10) toward the first planar surface (12), at least one first mirror area (26) inclined with respect to the active layer (10).

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) comprises at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.

Abstract: A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

Abstract: An optical component comprises a carrier plate (1) having a first main surface (2) and a second main surface (3) facing away from the first main surface (2), and a first lens structure (4) on the first main surface (2), wherein the first lens structure (4) has at least a first lens element (41) having a first polygonal form and a second lens element (42) having a second polygonal form, the first lens structure (4) completely covers the first main surface (2), and the first lens element (41) and the second lens element (42) are non-congruent with respect to one another and/or differ in terms of their orientation on the first main surface (2) of the carrier plate (1).

Abstract: An optoelectronic device includes at least one luminescence diode chip which emits electromagnetic radiation during operation of the optoelectronic device, and at least one shield against stray radiation which laterally surrounds the luminescence diode chip only in places, wherein each shield is integral with a component of the optoelectronic device.

Abstract: A surface emitting semiconductor laser includes a semiconductor body having at least two active zones that emit laser radiation and are connected to one another by a tunnel junction; an external resonator mirror arranged outside the semiconductor body and forming a laser resonator; and at least one polarization-selective element arranged in the laser resonator.

Abstract: A semiconductor laser includes a semiconductor laser element that emits electromagnetic radiation with at least one fundamental wavelength when in operation, an end mirror, a deflecting mirror reflective as a function of polarization located between the semiconductor laser element and the end mirror, and at least one optically nonlinear crystal configured for type II frequency conversion of the fundamental wavelength and which satisfies a ?/2 condition for the fundamental wavelength.

Abstract: A laser arrangement has at least one laser diode apparatus with a side surface which laterally limits the laser diode apparatus. The laser arrangement has a plurality of active regions arranged laterally side by side and configured to generate radiation. The laser diode apparatus is arranged on a mount. The distance between the side surface and an edge which laterally limits the mount on the part of the side surface is shorter than the distance between the side surface and the active region closest to the side surface. Additionally or alternatively, the distance between the side surface and the edge is shorter than one of the distances between two adjacent active regions of the laser diode apparatus.

Abstract: An optoelectronic apparatus includes an optical device with an optical structure including a plurality of optical elements, and a radiation-emitting or radiation-receiving semiconductor chip with a contact structure which includes a plurality of contact elements that make electrical contact with the semiconductor chip and are spaced apart vertically from the optical structure, wherein the contact elements are arranged in interspaces between the optical elements upon a projection of the contact structure into the plane of the optical structure.

Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (

Abstract: An optoelectronic component (1) is specified, comprising a semiconductor body (2) with a semiconductor layer sequence. The semiconductor layer sequence of the semiconductor body (2) comprises a pump region (3) provided for generating a pump radiation and an emission region (4) provided for generating an emission radiation. The emission region (4) and the pump region (3) are arranged one above the other. The pump radiation optically pumps the emission region (4) during operation of the optoelectronic component (1). The emission radiation emerges from the semiconductor body (2) with the semiconductor layer sequence in a lateral direction during operation of the optoelectronic component (1).

Abstract: A method of producing a radiation-emitting component is provided. A far field radiation pattern is predetermined. From the predetermined radiation pattern a refractive index profile for the radiation-emitting component is determined in a direction extending perpendicularly to a main emission direction of the component. A structure is determined for the component, such that the component includes the previously determined refractive index profile. The component is configured according to the previously determined structure.

Abstract: A light-emitting semiconductor component which contains a sequence of semiconductor layers (2) with an area of p-doped semiconductor layers (4) and n-doped semiconductor layers (3) between which a first pn junction (5a, 5b) is formed. The pn junction (5a, 5b) is subdivided into a light-emitting section (7) and a protective-diode section (8) in a lateral direction by means of an insulating section (6). An n-doped layer (9), which forms a second pn junction (10) which acts as a protective diode along with the p-doped area (4), is applied to the p-doped area (4) in the area of the protective-diode section (8), the first pn junction (5b) in the protective-diode section (8) having a larger area than the first pn junction (5a) in the light-emitting section (7). The protective-diode section (8) protects the light-emitting semiconductor component from voltage pulses due to electrostatic discharges (ESD).