Abstract: In a combustion method, in a burner (12, 20), a fuel/air mixture flowing through a flow passage (13) is made to react in a first combustion stage in a catalytic reactor (15), and downstream of the catalytic reactor (15) fuel is burnt together with the exhaust gas from the catalytic reactor (15) in a second combustion stage to form a homogenous flame (17) by self-ignition. If the fuel from the fuel/air mixture is only partially burnt in the first combustion stage in the catalytic reactor (15), and the unburnt remainder of the fuel is burnt in the second combustion stage, combustion can be stabilized by virtue of the fact that the fuel-containing exhaust gas from the catalytic reactor (15), between the outlet of the catalytic reactor (15) and the homogenous flame (17) is passed through devices 916, 19) which aerodynamically stabilize the homogenous flame (17).

Abstract: A burner includes a swirl generator (3) for a combustion airflow, has a conical swirl chamber (2) and a device for admitting fuel into the combustion airflow, wherein the swirl generator (3) incorporates combustion air inlet openings for the combustion airflow tangentially entering into the conical swirl chamber (2), and wherein the device for admitting fuel into the combustion airflow includes a first fuel feeding device having a first group (4) of fuel outlet openings substantially disposed in the direction of the burner axis for a first premix fuel quantity.

Abstract: In a combustion method, in a burner (12, 20), a fuel/air mixture flowing through a flow passage (13) is made to react in a first combustion stage in a catalytic reactor (15), and downstream of the catalytic reactor (15) fuel is burnt together with the exhaust gas from the catalytic reactor (15) in a second combustion stage to form a homogenous flame (17) by self-ignition.

Abstract: A burner for a heat generator comprises a swirl generator (1) for a combustion-air flow and means for injecting fuel for producing a main flow (6). A combustion chamber (2) is arranged downstream of the burner.

Abstract: In a method for injecting fuel into a burner (1), which burner (1) comprises an inner chamber (22) enclosed by at least one shell (8, 9), at which inner chamber fuel is injected through fuel nozzles (6) into a combustion air stream (23) flowing inside the inner chamber (22), the resulting fuel/air mixture flows within a time-lag (&tgr;) to a flame front (3) in a combustion chamber (2), and is ignited there, the formation of thermoacoustic, ignition-driven vibrations is achieved in that the fuel is injected in such a way by means of fuel nozzles (6) distributed over the burner length that the time-lag (&tgr;) between the injection of the fuel and its combustion at the flame front (3) corresponds to a distribution (12) that varies systematically over the burner length for the various fuel nozzles and reduces the vibrations.

Abstract: The invention relates to a vortex generator in a flow duct to which a fluid medium is applied, as well as method for controlling the wake flow of such a vortex generator. The task of safely avoiding the formation of a return flow zone in the core of the wake vortex (11) even under changing flow conditions is realized according to the invention in that an axial impulse is introduced in a targeted manner into the core flow of the wake vortex (11). According to a preferred embodiment of the invention, for this purpose a secondary flow is introduced at least approximately in the direction of the main flow into the core flow of the wake vortex (11) via outlet openings (12) on the vortex generator (2).

Abstract: A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &mgr;m.

Abstract: An apparatus for damping acoustic vibrations in a combustor as well as a corresponding combustor arrangement with the apparatus. The apparatus includes a Helmholtz resonator (4) that can be connected via a connecting channel (2) with a combustor (1). The Helmholtz resonator (4) contains a hollow body (6) the volume of which can be changed by adding or draining a fluid via a supply line (5), or is located adjacent to such a hollow body in such a way that the resonance volume (3) of the Helmholtz resonator (4) is changed when the volume of the hollow body (6) is changed. This apparatus makes it possible to adjust the resonance frequency of a Helmholtz resonator arranged inside a pressure container in accordance with the respective current operating point of the combustor to be damped, without having to pass movable components through the pressure container.

Abstract: A method for marking a product for detecting unauthorized imitations of the product, in particular of electrical switchgear equipment and the like. A color imprint is applied to an outer or inner surface of a housing of the switchgear or the like. The color imprint contains pigments that can be detected only by special methods, for example infrared examination and the like.

Abstract: In a method for injecting fuel into a burner (1), which burner (1) comprises an inner chamber (22) enclosed by at least one shell (8, 9), at which inner chamber fuel is injected through fuel nozzles (6) into a combustion air stream (23) flowing inside the inner chamber (22), the resulting fuel/air mixture flows within a time-lag (&tgr;) to a flame front (3) in a combustion chamber (2), and is ignited there, the formation of thermoacoustic, ignition-driven vibrations is achieved in that the fuel is injected in such a way by means of fuel nozzles (6) distributed over the burner length that the time-lag (&tgr;) between the injection of the fuel and its combustion at the flame front (3) corresponds to a distribution (12) that varies systematically over the burner length for the various fuel nozzles and reduces the vibrations.

Abstract: The present invention relates to an apparatus for damping acoustic vibrations in a combustor as well as a corresponding combustor arrangement with the apparatus. The apparatus comprises a Helmholtz resonator (4) that can be connected via a connecting channel (2) with a combustor (1). The Helmholtz resonator (4) contains a hollow body (6) the volume of which can be changed by adding or draining a fluid via a supply line (5), or is located adjacent to such a hollow body in such a way that the resonance volume (3) of the Helmholtz resonator (4) is changed when the volume of the hollow body (6) is changed. This apparatus makes it possible to adjust the resonance frequency of a Helmholtz resonator arranged inside a pressure container in accordance with the respective current operating point of the combustor to be damped, without having to pass movable components through the pressure container.

Abstract: An overcurrent release device for protection switching devices, in particular automatic line circuit breakers or motor protective switches, with electromagnetic and thermoelectric release, includes a thermoconducting tubular supporting body onto which a coil is wound and which has a striking end and an opposite widened receiving end for bearing contact and radial support of a bimetal snap-action disk with a central bore, a core having a bore defined therein, an armature movable in the supporting body between its striking end and the core, and a slide extending through the bore in the snap-action disk and through the bore in the core in a direction towards the armature. The slide is provided for thermoelectric disengagement by means of the snap-action disk via a thickened portion and for electromagnetic disengagement by means of the armature via a slide actuator. In the operative state, the spacing between the armature and the core corresponds at maximum to the snapping travel of the snap-action disk.

Abstract: A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

Abstract: The composite hybrid semiconductor structure contains a support plate substrate (11) with a number of at least two support connector spots (13) and a semiconductor chip or semiconductor wafer substrate (10) with a number of at least two chip connector spots (16). The structures is distinguished by a respectively thermally and electrically conducting adhesive layer (13') on the surface of the support plate substrate (11) within the areas of the support connector spots (13), where the said substrates (10, 11) with the said connector spots (13, 16) placed opposite each other and in electrically conducting and mechanically firm connection have been brought into connection with each other by the said electrically conductive adhesive layers (13').

Abstract: A circuit breaker with an input side and an output side for connecting and disconnecting conductors in an electrical circuit comprising a magnetic breaker device which acts on a latching mechanism unit for opening a contacting device in case of overload, an arc-quenching means being connected to said magnetic breaker device, whereat said magnetic breaker device comprises two parallel connected coils.

Abstract: A device for separating a pair of electric contacts which tend to weld and consist of a stationary contact 11 and a contact 12 which is movable away from the stationary contact, particularly in a circuit breaker is provided. The device includes a tripping lever 17, which is biased in a contact-separating direction and serves to actuate the movable contact 12, and means 19 for holding the tripping lever 17 in its stand-by position. The movement of the tripping lever 17 from its stand-by position involves a displacement of a lever fulcrum to a first position where a strong separating force is exerted on the movable contact 12 and then to a second position where a weaker separating force is exerted on the movable contact 12.

Abstract: A circuit breaker comprises high-duty arc-quenching means 23 and a latching mechanism 19, which is adapted to be electromagnetically and thermoelectrically unlatched by means of a snap-action bimetal disk 52 to open contacting means 21 in response to an overload. The snap-action bimetal disk 52 is held in a carrying body 32, which has a high thermal conductivity and which carries an electromagnetic exciter coil 33 and contains an associated plunger 42. For tripping in response to an overload, the plunger 42 is adapted to be actuated either electromagnetically and/or by the snap-action bimetal disk 52. The movable contact 21 will remain open when the latching mechanism 19 has been unlatched. In response to a movement of the plunger 42 out of its make position, the latching mechanism 19 is unlatched by a first arm of a two-armed lever 37, which is made of lucite and is pivoted to the carrying body 42. The contacting means 21 are adapted to be struck open by the second arm 41 of the lever 37.

Abstract: The invention relates to a monolithically integrated semiconductor arrangement, where from the first main surface a first zone (p) and a second zone (n.sup.+) are diffused into a substrate (2), which is weakly doped (substrate region n.sup.-) under a first main surface (3) and is more strongly doped (substrate region n.sup.+) under a second main surface (4). An insulating passivation layer is attached to the first main surface (3), on top of which a metallic cover electrode (D) is located, which covers adjacent substrate regions (n.sup.-) and the edge areas of the first zone (p) and the second zone (n.sup.+). In accordance with the invention, at least one additional zone (.nu.) of the same type of conductivity as the associated zone (n.sup.+), but with weaker doping, is diffused in for increasing the break-through voltage, and is connected to the zone (n.sup.+), does not contact the other zone (p) and prevents the zone (n.sup.+) from directly bordering the substrate (n.sup.

Abstract: A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region between a highly doped zone (5) and the weakly doped substrate (1). An adjacent highly doped zone (4) is not covered by the cover electrode (D1). By connecting the metal cover electrode (D1) to the pickup (12) for a voltage divider (R1, R2), a breakdown voltage can be adjusted that is higher than the sum of the depletion breakdown voltage and the enhancement breakdown voltage.

Abstract: In order to secure a series built-in unit on the section of a fitting rail (4) and to be able to detach it again therefrom and from the electric collector busbar (2, 5), in the region of a recess (13) on both side of the housing wall of the device is pivotably fitted a U-bracket-shaped coupling component (3) of elastic material which is divided by a slot (7) extending into the two U-arms of the frame-like widened connecting web into a supporting end (8) for the engagement of the fitting rail (4) and an actuating end (9) spring-loaded on the casing (1) lockable and unlockable by swinging in relation to the bearing position (6).